参数规格
- 封装
- PDFN5060-8L-W
- 漏源电压 VDS
- -60 V
- 漏极电流 ID
- -167 A
- 车规 (Y/N)
- Y
- 阈值电压 VGS(th) 典型
- -1.8 V
- 导通电阻 RDS(ON)@4.5V 典型
- 3.7 mΩ
- 导通电阻 RDS(ON)@4.5V 最大
- 5.1 mΩ
- 栅源电压 VGS 最大
- ±20 V
- 结温 Tj
- 175 °C
- 雪崩能量 EAS 最大
- 1440 mJ
- 输入电容 Ciss 典型
- 8760 pF
- 输出电容 Coss 典型
- 2440 pF
- 反向传输电容 Crss 典型
- 127 pF
- 总栅极电荷 Qg 典型
- 120 nC
在线规格书
以下内容整理自原厂规格书，实际参数以原厂正式文件为准。
SMP6003ALPWQ
-40V P-Channel Enhancement Mode Power MOSFET
Sinesemi Automotive MOSFET — AEC-Q101 Qualified, PPAP Capable, 175°C Operating Temperature
Product Summary
| V_DS |
R_DS(ON), max |
I_D, max |
| -60 V |
3.5 mΩ @ V_GS = -10V |
-167 A |
|
5.1 mΩ @ V_GS = -4.5V |
|
PDFN5060-8L-W
Features
- P-Channel Enhancement Mode - Logic Level
- AEC-Q101 Qualified, PPAP Capable
- 175°C Operating Temperature
- 100% ∆VDS & UIS & Rg Tested
Application
- General Automotive Applications
Mechanical Data
- Green Molding Compound
- Moisture Sensitivity: Level 1 per J-STD-020
- UL Flammability Classification Rating 94V-0
Ordering Information
| Orderable Part Number |
Package Type |
Device Marking |
Form |
Quantity (pcs) |
| SMP6003ALPWQ |
PDFN5060-8L-W |
P6003ALQ |
13" Tape&Reel |
5,000 |
Maximum Ratings (@ T_A = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Value |
Unit |
| Drain - Source Voltage |
V_DS |
-60 |
V |
| Gate - Source Voltage |
V_GS |
±20 |
V |
| Continuous Drain Current (V_GS = -10V) ^(1) |
I_D |
T_A = 25°C: -167 |
A |
|
|
T_A = 100°C: -118 |
A |
| Pulsed Drain Current ^(2) |
I_DM |
668 |
A |
| Single Pulse Avalanche Energy ^(3) |
E_AS |
1440 |
mJ |
| Single Pulse Avalanche Current (L = 0.1mH) |
I_AS |
-40 |
A |
| Power Dissipation |
P_D |
T_A = 25°C: 169 |
W |
|
|
T_A = 100°C: 84 |
W |
| Junction & Storage Temperature Range |
T_J, T_STG |
-55 ~ +175 |
°C |
Thermal Characteristics
| Parameter |
Symbol |
Typ |
Max |
Unit |
| Thermal Resistance, Junction-to-Ambient ^(4) |
R_θJA |
30 |
38 |
°C/W |
| Thermal Resistance, Junction-to-Case ^(5) |
R_θJC |
0.68 |
0.89 |
°C/W |
Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)
Off Characteristics ^(7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Drain-Source Breakdown Voltage |
V_(BR)DSS |
V_GS = 0V, I_D = -250µA |
-60 |
— |
— |
V |
| Zero Gate Voltage Drain Current |
I_DSS |
V_DS = -60V, V_GS = 0V |
— |
— |
-1.0 |
µA |
|
|
T_J = 125°C |
— |
— |
-100 |
µA |
| Gate-Source Leakage Current |
I_GSS |
V_GS = ±20V, V_DS = 0V |
— |
— |
±100 |
nA |
On Characteristics ^(7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Gate Threshold Voltage |
V_GS(th) |
V_DS = V_GS, I_D = -250µA |
-1.2 |
-1.8 |
-2.5 |
V |
| Static Drain-Source On-Resistance |
R_DS(on) |
V_GS = -10V, I_D = -20A |
— |
2.7 |
3.5 |
mΩ |
|
|
V_GS = -4.5V, I_D = -15A |
— |
3.7 |
5.1 |
mΩ |
| Forward Transconductance |
g_fs |
V_DS = -5.0V, I_D = -20A |
— |
98 |
— |
S |
| Diodes Forward Voltage |
V_SD |
I_S = -2.0A, V_GS = 0V |
— |
-0.7 |
-1.2 |
V |
Dynamic Characteristics ^(7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Input Capacitance |
C_iss |
V_DS = -30V, V_GS = 0V, f = 1MHz |
— |
8760 |
11388 |
pF |
| Output Capacitance |
C_oss |
|
— |
2440 |
3172 |
pF |
| Reverse Transfer Capacitance |
C_rss |
|
— |
127 |
254 |
pF |
| Gate Resistance |
R_g |
V_GS = 0V, V_DS = 0V, f = 1MHz |
— |
6.8 |
— |
Ω |
Switching Characteristics ^(7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Turn-On Delay Time |
t_d(on) |
V_GS = -10V, V_DS = -30V |
— |
5.4 |
— |
ns |
| Rise Time |
t_r |
I_D = -20A, R_GEN = 3.0Ω |
— |
13 |
— |
ns |
| Turn-Off Delay Time |
t_d(off) |
|
— |
203 |
— |
ns |
| Fall Time |
t_f |
|
— |
70 |
— |
ns |
Gate Charge Characteristics ^(7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Total Gate Charge (V_GS = -10V) |
Q_g |
V_DS = -30V, I_D = -20A |
— |
120 |
156 |
nC |
| Total Gate Charge (V_GS = -4.5V) |
Q_g |
|
— |
56 |
73 |
nC |
| Gate-Source Charge |
Q_gs |
V_GS = -10V |
— |
22 |
33 |
nC |
| Gate-Drain Charge |
Q_gd |
|
— |
18.3 |
23 |
nC |
| Gate Plateau Voltage |
V_plateau |
|
— |
-2.9 |
— |
V |
Drain-Source Diode Characteristics ^(7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Body Diode Reverse Recovery Time |
t_rr |
I_S = -20A, di/dt = 100A/µs |
— |
70 |
— |
ns |
| Body Diode Reverse Recovery Charge |
Q_rr |
T_J = 25°C |
— |
88 |
— |
nC |
| Diode Forward Current |
I_S |
T_A = 25°C |
— |
— |
-167 |
A |
Notes:
- This current is chip limited, which is calculated based on RθJC.
- This current is calculated on single pulse with 10µs Pulse.
- Defined by design, not subject to production test. T_J=25°C, V_DS=-20V, V_GS=-10V, L=1.0mH.
- Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
- Thermal resistance from junction to the exposed pad.
- Short duration pulse test used to minimize self-heating effect.
- Defined by design; not subject to production.
