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SMP6010ALUQ

中晶新源 SineSemi核心代理商

中低压 MOSFET车规TO252-3L

参数规格

封装
TO252-3L
结构
P
漏源电压 VDS
-60 V
漏极电流 ID
-75 A
导通电阻 RDS(ON)@10V 最大
10 mΩ
车规 (Y/N)
Y
阈值电压 VGS(th) 典型
-1.8 V
导通电阻 RDS(ON)@10V 典型
7.6 mΩ
导通电阻 RDS(ON)@4.5V 典型
10 mΩ
导通电阻 RDS(ON)@4.5V 最大
13 mΩ
栅源电压 VGS 最大
±20 V
结温 Tj
175 °C
雪崩能量 EAS 最大
410 mJ
输入电容 Ciss 典型
3559 pF
输出电容 Coss 典型
912 pF
反向传输电容 Crss 典型
36 pF
总栅极电荷 Qg 典型
47 nC

不确定怎么选？阅读《中低压 MOSFET 选型指南》 →

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMP6010ALUQ

-60V P-Channel Enhancement Mode Power MOSFET

Sinesemi Automotive MOSFET — AEC-Q101 Qualified, PPAP Capable, 175°C Operating Temperature

Product Summary
VDS RDS(ON), max ID, max
-60 V 10.0 mΩ @ VGS = -10V -75 A
13.0 mΩ @ VGS = -4.5V

TO252-3L

Features
  • P-Channel Enhancement Mode - Logic Level
  • AEC-Q101 Qualified, PPAP Capable
  • 175°C Operating Temperature
  • 100% ∆VDS & UIS & Rg Tested
Application
  • General Automotive Applications
Mechanical Data
  • Green Molding Compound
  • Moisture Sensitivity: Level 1 per J-STD-020
  • UL Flammability Classification Rating 94V-0
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMP6010ALUQ TO252-3L P6010ALQ 13" Tape&Reel 2,500
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS -60 V
Gate - Source Voltage VGS ±20 V
Continuous Drain Current (VGS = -10V) (1) ID TA = 25°C: -75 A
TA = 100°C: -53 A
Pulsed Drain Current (2) IDM -301 A
Single Pulse Avalanche Energy (3) EAS 410 mJ
Single Pulse Avalanche Current (L = 0.1mH) IAS -47 A
Power Dissipation PD TA = 25°C: 100 W
TA = 100°C: 50 W
Junction & Storage Temperature Range TJ, TSTG -55 ~ +175 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 30 38 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC 1.1 1.5 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -60 — — V
Zero Gate Voltage Drain Current IDSS VDS = -60V, VGS = 0V — — -1.0 µA
TJ = 125°C — — -100 µA
Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V — — ±100 nA
On Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1.2 -1.8 -2.5 V
Static Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -20A — 7.6 10.0 mΩ
VGS = -4.5V, ID = -15A — 10.0 13.0 mΩ
Forward Transconductance gfs VDS = -5.0V, ID = -20A — 42 — S
Diodes Forward Voltage VSD IS = -2.0A, VGS = 0V — -0.7 -1.2 V
Dynamic Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance Ciss VDS = -30V, VGS = 0V, f = 1MHz — 3559 4627 pF
Output Capacitance Coss — 912 1186 pF
Reverse Transfer Capacitance Crss — 36 72 pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 4.9 — Ω
Switching Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time td(on) VGS = -10V, VDS = -30V — 5.0 — ns
Rise Time tr ID = -20A, RGEN = 3.0Ω — 12 — ns
Turn-Off Delay Time td(off) — 67 — ns
Fall Time tf — 23 — ns
Gate Charge Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (VGS = -10V) Qg VDS = -30V, ID = -20A — 47 81 nC
Total Gate Charge (VGS = -4.5V) Qg — 22 28 nC
Gate-Source Charge Qgs VGS = -10V — 10.0 15 nC
Gate-Drain Charge Qgd — 5.0 7 nC
Gate Plateau Voltage Vplateau — -3.0 — V
Drain-Source Diode Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Body Diode Reverse Recovery Time trr IS = -20A, di/dt = 100A/µs — 43 — ns
Body Diode Reverse Recovery Charge Qrr TJ = 25°C — 59 — nC
Diode Forward Current IS TA = 25°C — — -75 A

Notes:

  1. This current is chip limited, which is calculated based on RθJC.
  2. This current is calculated on single pulse with 10µs Pulse.
  3. Defined by design, not subject to production test. TJ=25°C, VDS=-30V, VGS=-10V, L=1.0mH.
  4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  5. Thermal resistance from junction to the exposed pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design; not subject to production.
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