Product Detail

SMT8501AHTL

SineSemi 中晶新源Core Authorized Distributor

LV & MV MOSFETsTOLL

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Specifications

Package: TOLL
Configuration: N
VDS_Max: 85 V
ID: 311 A
RDS(ON)_Max @VGS=10V: 1.7 mΩ
Automotive (Y/N): N
VGS(th)_Typ: 3 V
RDS(ON)_Typ @VGS=10V: 1.4 mΩ
VGS_Max: ±20 V
Tj: 150 °C
EAS_Max: 1346 mJ
Ciss_Typ: 7461 pF
Coss_Typ: 2737 pF
Crss_Typ: 103 pF
Qg_Typ: 105 nC
ESD: No
MPQ: 2000 pcs
MOQ: 20000 pcs
App: Motor Drive: Y
App: HF Power: Y
App: General Switch: Y

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Package & Schematic

SMT8501AHTL package outline, pin configuration and schematic — Package outline · Pin configuration · Schematic (from SineSemi official datasheet)

Online Datasheet

Compiled from the manufacturer's datasheet; the official document prevails.

SMT8501AHTL

85V N-Channel Power MOSFET

Product Summary

V_DS	R_DS(ON), max	I_D, max
85 V	1.7 mΩ @ V_GS = 10V	311 A

TOLL

Maximum Ratings (@ T_A = 25°C, unless otherwise specified.)

Parameter	Symbol	Value	Units
Drain - Source Voltage	V_DS	85	V
Gate - Source Voltage	V_GS	±20	V
Continuous Drain Current (V_GS = 10V) ⁽¹⁾	I_D @ T_C = 25°C	311	A
	I_D @ T_C = 100°C	197	A
Pulsed Drain Current ⁽²⁾	I_DM	856	A
Single Pulse Avalanche Energy ⁽³⁾	E_AS	1346	mJ
Single Pulse Avalanche Current (L = 0.1mH)	I_AS	93	A
Power Dissipation	P_D @ T_C = 25°C	278	W
	P_D @ T_C = 100°C	111	W
Junction & Storage Temperature Range	T_J, T_STG	-55~+150	°C

Thermal Characteristics

Parameter	Symbol	Typ	Max	Unit
Thermal Resistance, Junction-to-Ambient ⁽⁴⁾	R_θJA	25	32	°C/W
Thermal Resistance, Junction-to-Case ⁽⁵⁾	R_θJC	0.34	0.45	°C/W

Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)

Off Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Units
Drain-Source Breakdown Voltage	V_(BR)DSS	V_GS = 0V, I_D = 250µA	85	—	—	V
		V_DS = 85V, V_GS = 0V	—	—	1.0	µA
Zero Gate Voltage Drain Current	I_DSS	T_J = 125°C	—	—	100	µA
Gate-Source Leakage Current	I_GSS	V_GS = ±20V, V_DS = 0V	—	—	±100	nA

On Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Units
Gate Threshold Voltage	V_GS(th)	V_GS = V_DS, I_D = 250µA	2.0	3.0	4.0	V
Static Drain-Source On-Resistance	R_DS(on)	V_GS = 10V, I_D = 80A	—	1.4	1.7	mΩ
Forward Transconductance	g_fs	V_DS = 5.0V, I_D = 20A	—	61	—	S
Diodes Forward Voltage	V_SD	I_S = 2.0A, V_GS = 0V	—	0.7	1.2	V

Dynamic Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Units
Input Capacitance	C_iss		—	7461	—	pF
Output Capacitance	C_oss	V_DS = 40V, V_GS = 0V, f = 1MHz	—	2737	—	pF
Reverse Transfer Capacitance	C_rss		—	103	—	pF
Gate Resistance	R_g	V_GS = 0V, V_DS = 0V, f = 1MHz	—	1.6	—	Ω

Switching Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Units
Turn-On Delay Time	t_d(on)		—	15.7	—	ns
Rise Time	t_r	V_DS = 40V, V_GS = 10V	—	27	—	ns
Turn-Off Delay Time	t_d(off)	I_D = 80A, R_GEN = 3.0Ω	—	50	—	ns
Fall Time	t_f		—	26	—	ns

Gate Charge Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Units
Total Gate Charge (V_GS = 10V)	Q_g		—	105	—	nC
Total Gate Charge (V_GS = 7.0V)	Q_g		—	77	—	nC
Gate-Source Charge	Q_gs	V_DS = 40V, I_D = 80A	—	33	—	nC
Gate-Drain Charge	Q_gd		—	26	—	nC
Gate Plateau Voltage	V_plateau		—	5.0	—	V

Drain-Source Diode Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Units
Body Diode Reverse Recovery Time	t_rr	I_S = 20A, di/dt = 100A/µs	—	64	—	ns
Body Diode Reverse Recovery Charge	Q_rr	T_J = 25°C	—	113	—	nC
Diode Forward Current	I_S	T_J = 25°C	—	—	311	A

Notes:

This current is chip limited, which is calculated based on Rthjc.
This current is calculated on single pulse with 10us Single Pulse.
Defined by design, not subject to production test, EAS condition: TJ=25°C, VDD=40V, VGS=10V, L=1.0mH.
Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
Thermal resistance from junction to the exposed pad.
Short duration pulse test used to minimize self-heating effect.
Defined by design, not subject to production.

Specifications

Package & Schematic

Online Datasheet

SMT8501AHTL

85V N-Channel Power MOSFET

Product Summary

Maximum Ratings (@ TA = 25°C, unless otherwise specified.)

Thermal Characteristics

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Gate Charge Characteristics

Drain-Source Diode Characteristics

Related Parts

Maximum Ratings (@ T_A = 25°C, unless otherwise specified.)

Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)