Product Detail

SMT3003DLP

SineSemi 中晶新源Core Authorized Distributor

LV & MV MOSFETsPDFN5060-8L

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Specifications

Package: PDFN5060-8L
Configuration: N
VDS_Max: 30 V
ID: 86 A
RDS(ON)_Max @VGS=10V: 3.9 mΩ
Automotive (Y/N): N
VGS(th)_Typ: 1.7 V
RDS(ON)_Typ @VGS=10V: 3.2 mΩ
RDS(ON)_Typ @VGS=4.5V: 4.2 mΩ
RDS(ON)_Max @VGS=4.5V: 5.5 mΩ
VGS_Max: ±20 V
Tj: 150 °C
EAS_Max: 78 mJ
Ciss_Typ: 1144 pF
Coss_Typ: 608 pF
Crss_Typ: 54 pF
Qg_Typ: 17.9 nC
ESD: No
MPQ: 5000 pcs
MOQ: 50000 pcs
App: Motor Drive: Y
App: General Switch: Y

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Package & Schematic

SMT3003DLP package outline, pin configuration and schematic — Package outline · Pin configuration · Schematic (from SineSemi official datasheet)

Online Datasheet

Compiled from the manufacturer's datasheet; the official document prevails.

SMT3003DLP

30V N-Channel Power MOSFET

Product Summary

V_DS	R_DS(ON), max	I_D, max
30 V	3.9 mΩ @ V_GS = 10V	86 A
	5.5 mΩ @ V_GS = 4.5V

PDFN5060-8L

Maximum Ratings (@ T_C = 25°C, unless otherwise specified.)

Parameter	Symbol	Value	Unit
Drain - Source Voltage	V_DS	30	V
Gate - Source Voltage	V_GS	±20	V
Continuous Drain Current ⁽¹⁾	I_D @ T_C = 25°C	86	A
	I_D @ T_C = 100°C	54	A
Pulsed Drain Current ⁽²⁾	I_DM	345	A
Single Pulse Avalanche Energy ⁽³⁾	E_AS	78	mJ
Single Pulse Avalanche Current (L = 0.1mH)	I_AS	22	A
Power Dissipation	P_D @ T_C = 25°C	45	W
	P_D @ T_C = 100°C	18	W
Junction & Storage Temperature Range	T_J, T_STG	-55~+150	°C

Thermal Characteristics

Parameter	Symbol	Typ	Max	Unit
Thermal Resistance, Junction-to-Ambient ⁽⁴⁾	R_θJA	44	55	°C/W
Thermal Resistance, Junction-to-Case ⁽⁵⁾	R_θJC	2.1	2.8	°C/W

Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)

Off Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Drain-Source Breakdown Voltage	V_(BR)DSS	V_GS = 0V, I_D = 250µA	30	—	—	V
Zero Gate Voltage Drain Current	I_DSS	V_DS = 30V, V_GS = 0V	—	—	1.0	µA
		T_J = 125°C	—	—	100	µA
Gate-Source Leakage Current	I_GSS	V_GS = ±20V, V_DS = 0V	—	—	±100	nA

On Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Gate Threshold Voltage	V_GS(th)	V_GS = V_DS, I_D = 250µA	1.2	1.7	2.5	V
Static Drain-Source On-Resistance	R_DS(on)	V_GS = 10V, I_D = 20A	—	3.2	3.9	mΩ
		V_GS = 4.5V, I_D = 15A	—	4.2	5.5	mΩ
Forward Transconductance	g_fs	V_DS = 5.0V, I_D = 20A	—	18	—	S
Diodes Forward Voltage	V_SD	I_S = 2.0A, V_GS = 0V	—	0.7	1.2	V

Dynamic Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Input Capacitance	C_iss	V_DS = 15V, V_GS = 0V, f = 1MHz	—	1144	—	pF
Output Capacitance	C_oss		—	608	—	pF
Reverse Transfer Capacitance	C_rss		—	54	—	pF
Gate Resistance	R_g	V_GS = 0V, V_DS = 0V, f = 1MHz	—	3.3	—	Ω

Switching Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Turn-On Delay Time	t_d(on)	V_GS = 10V, V_DS = 15V	—	1.3	—	ns
Rise Time	t_r	I_D = 20A, R_GEN = 3.0Ω	—	13.0	—	ns
Turn-Off Delay Time	t_d(off)		—	20	—	ns
Fall Time	t_f		—	9.2	—	ns

Gate Charge Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Total Gate Charge (V_GS = 10V)	Q_g	V_DS = 15V, I_D = 20A	—	17.9	—	nC
Total Gate Charge (V_GS = 4.5V)	Q_g		—	9.3	—	nC
Gate-Source Charge	Q_gs	V_GS = 10V	—	2.8	—	nC
Gate-Drain Charge	Q_gd		—	2.4	—	nC
Gate Plateau Voltage	V_plateau		—	2.7	—	V

Drain-Source Diode Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Body Diode Reverse Recovery Time	t_rr	I_S = 20A, di/dt = 100A/µs	—	17.2	—	ns
Body Diode Reverse Recovery Charge	Q_rr	T_J = 25°C	—	3.8	—	nC
Diode Forward Current	I_S	T_C = 25°C	—	—	56	A

Notes:

This current is chip limited, which is calculated based on R_θJC.
This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
Defined by design, not subject to production test.
Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
Thermal resistance from junction to the exposed drain pad.
Short duration pulse test used to minimize self-heating effect.
Defined by design, not subject to production.

Specifications

Package & Schematic

Online Datasheet

SMT3003DLP

30V N-Channel Power MOSFET

Product Summary

Maximum Ratings (@ TC = 25°C, unless otherwise specified.)

Thermal Characteristics

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Gate Charge Characteristics

Drain-Source Diode Characteristics

Related Parts

Maximum Ratings (@ T_C = 25°C, unless otherwise specified.)

Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)