Product Detail
SMT10T03BHTL
SineSemi 中晶新源Core Authorized Distributor
Specifications
- Package
- TOLL
- Configuration
- N
- VDS_Max
- 100 V
- ID
- 195 A
- RDS(ON)_Max @VGS=10V
- 3.9 mΩ
- Automotive (Y/N)
- N
- VGS(th)_Typ
- 3 V
- RDS(ON)_Typ @VGS=10V
- 3.3 mΩ
- VGS_Max
- ±20 V
- Tj
- 175 °C
- EAS_Max
- 518 mJ
- Ciss_Typ
- 3310 pF
- Coss_Typ
- 1224 pF
- Crss_Typ
- 34 pF
- Qg_Typ
- 52 nC
- ESD
- No
- MPQ
- 2000 pcs
- MOQ
- 20000 pcs
- App: Motor Drive
- Y
- App: HF Power
- Y
- App: Battery Protection
- Y
- App: General Switch
- Y
Not sure how to choose? Read the LV & MV MOSFETs Selection Guide →
Package & Schematic
Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SMT10T03BHTL
100V N-Channel Power MOSFET
Features
- Low On-Resistance
- Excellent FoM (figure of merit)
- 100% ΔVDS & UIS & Rg Tested
RoHS / HALOGEN FREE
Applications
- Motor Drives
- High-Performance Power Supplies
- Hard Switching and High Speed Circuit
Mechanical Data
- Green Molding Compound
- Moisture Sensitivity: Level 1 per J-STD-020
- UL Flammability Classification Rating 94V-0
Product Summary
| VDS | RDS(ON)_TYP | I_D_MAX |
|---|---|---|
| 100 V | 3.3 mΩ @VGS = 10V | 195 A |
TOLL
Ordering Information
| Orderable Part Number | Package Type | Device Marking | Form | Quantity (pcs) |
|---|---|---|---|---|
| SMT10T03BHTL | TOLL | 10T03BH | 13" Tape&Reel | 2,000 |
Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain - Source Voltage | VDS | 100 | V |
| Gate - Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (VGS = 10V) (1) | ID @ TC = 25°C | 195 | A |
| ID @ TC = 100°C | 138 | A | |
| Pulsed Drain Current (2) | IDM | 703 | A |
| Single Pulse Avalanche Energy (3) | EAS | 518 | mJ |
| Single Pulse Avalanche Current (L = 0.1mH) | IAS | 57 | A |
| Power Dissipation | PD @ TC = 25°C | 313 | W |
| PD @ TC = 100°C | 156 | W | |
| Junction & Storage Temperature Range | TJ, TSTG | -55 ~ +175 | °C |
Thermal Characteristics
| Parameter | Symbol | Typ. | Max. | Unit |
|---|---|---|---|---|
| Thermal Resistance, Junction-to-Ambient (4) | R_θJA | 25 | 32 | °C/W |
| Thermal Resistance, Junction-to-Case (5) | R_θJC | 0.48 | 0.63 | °C/W |
Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)
Off Characteristics (6)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 100 | — | — | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = 100V, VGS = 0V | — | — | 1.0 | µA |
| TJ = 125°C | — | — | 100 | µA | ||
| Gate-Source Leakage Current | IGSS | VGS = ±20V, VDS = 0V | — | — | ±100 | nA |
On Characteristics (6)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | VGS = VDS, ID = 250µA | 2.0 | 3.0 | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 10V, ID = 80A | — | 3.3 | 3.9 | mΩ |
| Forward Transconductance | gfs | VDS = 5.0V, ID = 20A | — | 40 | — | S |
| Diodes Forward Voltage | VSD | IS = 2.0A, VGS = 0V | — | 0.7 | 1.2 | V |
Dynamic Characteristics (7)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Input Capacitance | Ciss | — | 3310 | — | pF | |
| Output Capacitance | Coss | VDS = 50V, VGS = 0V, f = 1MHz | — | 1224 | — | pF |
| Reverse Transfer Capacitance | Crss | — | 34 | — | pF | |
| Gate Resistance | Rg | VGS = 0V, VDS = 0V, f = 1MHz | — | 1.1 | — | Ω |
Switching Characteristics (7)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Turn-On Delay Time | td(on) | — | 11.1 | — | ns | |
| Rise Time | tr | VGS = 10V, VDS = 50V | — | 31 | — | ns |
| Turn-Off Delay Time | td(off) | ID = 80A, RGEN = 3.0Ω | — | 22 | — | ns |
| Fall Time | tf | — | 21 | — | ns |
Gate Charge Characteristics (7)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Total Gate Charge (VGS = 10V) | Qg | — | 52 | — | nC | |
| Total Gate Charge (VGS = 7.0V) | Qg | VDS = 50V, ID = 80A | — | 38 | — | nC |
| Gate-Source Charge | Qgs | VGS = 10V | — | 15 | — | nC |
| Gate-Drain Charge | Qgd | — | 11.7 | — | nC | |
| Gate Plateau Voltage | Vplateau | — | 4.8 | — | V |
Drain-Source Diode Characteristics (7)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Body Diode Reverse Recovery Time | trr | IF = 80A, dI/dt = 100A/µs, TJ = 25°C | — | 70 | — | ns |
| Body Diode Reverse Recovery Charge | Qrr | — | 111 | — | nC | |
| Diode Forward Current | IS | TC = 25°C | — | — | 195 | A |
Notes:
- This current is chip limited, which is calculated based on Rthjc.
- This current is calculated on single pulse with 10us Single Pulse.
- Defined by design, not subject to production test, EAS condition: TJ = 25°C, VDD = 50V, VGS = 10V, L = 1.0mH.
- Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
- Thermal resistance from junction to the exposed pad.
- Short duration pulse test used to minimize self-heating effect.
- Defined by design, not subject to production.
Typical Electrical and Thermal Characteristics
（曲线图略）
Figure 1: Output Characteristics — ID vs. VDS, VGS = 5.0V / 5.5V / 6.0V / 6.5V / 7.0V / 8.0V / 10V
Figure 2: Transfer Characteristics — ID vs. VGS, VDS = 3.0V, TJ = 25°C / 175°C
Figure 3: On-Resistance vs. Gate-Source Voltage — RDS(on) vs. VGS, ID = 80A, TJ = 25°C / 175°C
Figure 4: On-Resistance vs. Drain Current and Gate Voltage — RDS(on) vs. ID, VGS = 10V, TJ = 25°C
Figure 5: On-Resistance vs. Junction Temperature — Normalized RDS(on) vs. TJ, VGS = 10V, ID = 80A
Figure 6: Source-Drain Diode Forward Voltage — IS vs. VSD, VGS = 10V, TJ = 25°C / 175°C
Figure 7: Gate Threshold Variation vs. Junction Temperature — VGS(th) vs. TJ, ID = 250µA / 1.0mA
Figure 8: Gate Charge Characteristics — VGS vs. Qg, ID = 80A
Figure 9: Capacitance Characteristics — CT vs. VDS, Ciss / Coss / Crss
Figure 10: Power Derating — PD vs. TC
Figure 11: Current Derating — ID vs. TC
Figure 12: Safe Operating Area — ID vs. VDS, TJ(Max) = 175°C, TC = 25°C, pulse widths: 1.0µs / 10µs / 100µs / 1.0ms / 10ms / DC
Figure 13: Normalized Maximum Transient Thermal Impedance — r(t) vs. Pulse Width (s), δ = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse; Notes: (1) Duty cycle δ = t1 / t2; (2) R_θJC(t) = r(t) × R_θJC
TOLL Package Outline
Package Outlines
（封装外形图略：Top View、Side View、Bottom View、Front View）
Notes:
- Dimension and tolerance per ASME Y14.5M, 1994.
- All dimensions in millimeter.
- Dimensions "E" and "D1" do not include burrs or mold flash. Protrusions or gate burrs.
| DIM. | MIN. | NOM. | MAX. |
|---|---|---|---|
| A | 2.200 | 2.300 | 2.400 |
| b | 0.650 | 0.800 | 0.900 |
| b1 | 9.650 | 9.800 | 9.950 |
| b2 | — | 0.400 REF | — |
| c | 0.400 | 0.500 | 0.600 |
| D | 11.480 | 11.680 | 11.950 |
| D1 | 10.250 | — | 10.700 |
| D2 | 2.850 | — | 3.400 |
| E | 9.700 | 9.900 | 10.100 |
| E1 | 8.000 | — | 9.250 |
| e | — | 1.200 BSC | — |
| H1 | 6.700 | 7.000 | 7.300 |
| k | — | 3.000 REF | — |
| k1 | — | 4.550 REF | — |
| L | 1.350 | — | 2.100 |
| L1 | — | 0.700 REF | — |
| L2 | — | 0.600 REF | — |
| L3 | 0.950 | 1.200 | 1.350 |
单位：MILLIMETERS
Recommended Soldering Footprint
（焊盘推荐图略）
尺寸（DIMENSIONS: MILLIMETERS）：10.100 × 13.300；内部焊盘 8.000 × 2.500；引脚区 2.800；引脚节距 1.200；引脚宽 0.800；引脚末端宽 0.400