产品详情
SMT10T03BHTL
中晶新源 SineSemi核心代理商
参数规格
- 封装
- TOLL
- 结构
- N
- 漏源电压 VDS
- 100 V
- 漏极电流 ID
- 195 A
- 导通电阻 RDS(ON)@10V 最大
- 3.9 mΩ
- 车规 (Y/N)
- N
- 阈值电压 VGS(th) 典型
- 3 V
- 导通电阻 RDS(ON)@10V 典型
- 3.3 mΩ
- 栅源电压 VGS 最大
- ±20 V
- 结温 Tj
- 175 °C
- 雪崩能量 EAS 最大
- 518 mJ
- 输入电容 Ciss 典型
- 3310 pF
- 输出电容 Coss 典型
- 1224 pF
- 反向传输电容 Crss 典型
- 34 pF
- 总栅极电荷 Qg 典型
- 52 nC
- ESD
- No
- 最小包装量
- 2000 pcs
- 最小订购量
- 20000 pcs
- 应用推荐-马达驱动
- Y
- 应用推荐-高频电源
- Y
- 应用推荐-锂电池保护
- Y
- 应用推荐-通用开关
- Y
封装与电路符号
在线规格书
以下内容整理自原厂规格书，实际参数以原厂正式文件为准。
SMT10T03BHTL
100V N-Channel Power MOSFET
Features
- Low On-Resistance
- Excellent FoM (figure of merit)
- 100% ΔVDS & UIS & Rg Tested
RoHS / HALOGEN FREE
Applications
- Motor Drives
- High-Performance Power Supplies
- Hard Switching and High Speed Circuit
Mechanical Data
- Green Molding Compound
- Moisture Sensitivity: Level 1 per J-STD-020
- UL Flammability Classification Rating 94V-0
Product Summary
| V_DS | R_DS(ON)_TYP | I_D_MAX |
|---|---|---|
| 100 V | 3.3 mΩ @V_GS = 10V | 195 A |
TOLL
Ordering Information
| Orderable Part Number | Package Type | Device Marking | Form | Quantity (pcs) |
|---|---|---|---|---|
| SMT10T03BHTL | TOLL | 10T03BH | 13" Tape&Reel | 2,000 |
Maximum Ratings (@ T_C = 25°C, unless otherwise specified.)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain - Source Voltage | V_DS | 100 | V |
| Gate - Source Voltage | V_GS | ±20 | V |
| Continuous Drain Current (V_GS = 10V) ^(1) | I_D @ T_C = 25°C | 195 | A |
| I_D @ T_C = 100°C | 138 | A | |
| Pulsed Drain Current ^(2) | I_DM | 703 | A |
| Single Pulse Avalanche Energy ^(3) | E_AS | 518 | mJ |
| Single Pulse Avalanche Current (L = 0.1mH) | I_AS | 57 | A |
| Power Dissipation | P_D @ T_C = 25°C | 313 | W |
| P_D @ T_C = 100°C | 156 | W | |
| Junction & Storage Temperature Range | T_J, T_STG | -55 ~ +175 | °C |
Thermal Characteristics
| Parameter | Symbol | Typ. | Max. | Unit |
|---|---|---|---|---|
| Thermal Resistance, Junction-to-Ambient ^(4) | R_θJA | 25 | 32 | °C/W |
| Thermal Resistance, Junction-to-Case ^(5) | R_θJC | 0.48 | 0.63 | °C/W |
Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)
Off Characteristics ^(6)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V_(BR)DSS | V_GS = 0V, I_D = 250µA | 100 | — | — | V |
| Zero Gate Voltage Drain Current | I_DSS | V_DS = 100V, V_GS = 0V | — | — | 1.0 | µA |
| T_J = 125°C | — | — | 100 | µA | ||
| Gate-Source Leakage Current | I_GSS | V_GS = ±20V, V_DS = 0V | — | — | ±100 | nA |
On Characteristics ^(6)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Gate Threshold Voltage | V_GS(th) | V_GS = V_DS, I_D = 250µA | 2.0 | 3.0 | 4.0 | V |
| Static Drain-Source On-Resistance | R_DS(ON) | V_GS = 10V, I_D = 80A | — | 3.3 | 3.9 | mΩ |
| Forward Transconductance | g_fs | V_DS = 5.0V, I_D = 20A | — | 40 | — | S |
| Diodes Forward Voltage | V_SD | I_S = 2.0A, V_GS = 0V | — | 0.7 | 1.2 | V |
Dynamic Characteristics ^(7)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Input Capacitance | C_iss | — | 3310 | — | pF | |
| Output Capacitance | C_oss | V_DS = 50V, V_GS = 0V, f = 1MHz | — | 1224 | — | pF |
| Reverse Transfer Capacitance | C_rss | — | 34 | — | pF | |
| Gate Resistance | R_g | V_GS = 0V, V_DS = 0V, f = 1MHz | — | 1.1 | — | Ω |
Switching Characteristics ^(7)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Turn-On Delay Time | t_d(on) | — | 11.1 | — | ns | |
| Rise Time | t_r | V_GS = 10V, V_DS = 50V | — | 31 | — | ns |
| Turn-Off Delay Time | t_d(off) | I_D = 80A, R_GEN = 3.0Ω | — | 22 | — | ns |
| Fall Time | t_f | — | 21 | — | ns |
Gate Charge Characteristics ^(7)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Total Gate Charge (V_GS = 10V) | Q_g | — | 52 | — | nC | |
| Total Gate Charge (V_GS = 7.0V) | Q_g | V_DS = 50V, I_D = 80A | — | 38 | — | nC |
| Gate-Source Charge | Q_gs | V_GS = 10V | — | 15 | — | nC |
| Gate-Drain Charge | Q_gd | — | 11.7 | — | nC | |
| Gate Plateau Voltage | V_plateau | — | 4.8 | — | V |
Drain-Source Diode Characteristics ^(7)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Body Diode Reverse Recovery Time | t_rr | I_F = 80A, dI/dt = 100A/µs, T_J = 25°C | — | 70 | — | ns |
| Body Diode Reverse Recovery Charge | Q_rr | — | 111 | — | nC | |
| Diode Forward Current | I_S | T_C = 25°C | — | — | 195 | A |
Notes:
- This current is chip limited, which is calculated based on Rthjc.
- This current is calculated on single pulse with 10us Single Pulse.
- Defined by design, not subject to production test, E_AS condition: T_J = 25°C, V_DD = 50V, V_GS = 10V, L = 1.0mH.
- Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
- Thermal resistance from junction to the exposed pad.
- Short duration pulse test used to minimize self-heating effect.
- Defined by design, not subject to production.
Typical Electrical and Thermal Characteristics
（曲线图略）
Figure 1: Output Characteristics — I_D vs. V_DS, V_GS = 5.0V / 5.5V / 6.0V / 6.5V / 7.0V / 8.0V / 10V
Figure 2: Transfer Characteristics — I_D vs. V_GS, V_DS = 3.0V, T_J = 25°C / 175°C
Figure 3: On-Resistance vs. Gate-Source Voltage — R_DS(on) vs. V_GS, I_D = 80A, T_J = 25°C / 175°C
Figure 4: On-Resistance vs. Drain Current and Gate Voltage — R_DS(on) vs. I_D, V_GS = 10V, T_J = 25°C
Figure 5: On-Resistance vs. Junction Temperature — Normalized R_DS(on) vs. T_J, V_GS = 10V, I_D = 80A
Figure 6: Source-Drain Diode Forward Voltage — I_S vs. V_SD, V_GS = 10V, T_J = 25°C / 175°C
Figure 7: Gate Threshold Variation vs. Junction Temperature — V_GS(th) vs. T_J, I_D = 250µA / 1.0mA
Figure 8: Gate Charge Characteristics — V_GS vs. Q_g, I_D = 80A
Figure 9: Capacitance Characteristics — C_T vs. V_DS, C_iss / C_oss / C_rss
Figure 10: Power Derating — P_D vs. T_C
Figure 11: Current Derating — I_D vs. T_C
Figure 12: Safe Operating Area — I_D vs. V_DS, T_J(Max) = 175°C, T_C = 25°C, pulse widths: 1.0µs / 10µs / 100µs / 1.0ms / 10ms / DC
Figure 13: Normalized Maximum Transient Thermal Impedance — r(t) vs. Pulse Width (s), δ = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse; Notes: (1) Duty cycle δ = t_1 / t_2; (2) R_θJC(t) = r(t) × R_θJC
TOLL Package Outline
Package Outlines
（封装外形图略：Top View、Side View、Bottom View、Front View）
Notes:
- Dimension and tolerance per ASME Y14.5M, 1994.
- All dimensions in millimeter.
- Dimensions "E" and "D1" do not include burrs or mold flash. Protrusions or gate burrs.
| DIM. | MIN. | NOM. | MAX. |
|---|---|---|---|
| A | 2.200 | 2.300 | 2.400 |
| b | 0.650 | 0.800 | 0.900 |
| b1 | 9.650 | 9.800 | 9.950 |
| b2 | — | 0.400 REF | — |
| c | 0.400 | 0.500 | 0.600 |
| D | 11.480 | 11.680 | 11.950 |
| D1 | 10.250 | — | 10.700 |
| D2 | 2.850 | — | 3.400 |
| E | 9.700 | 9.900 | 10.100 |
| E1 | 8.000 | — | 9.250 |
| e | — | 1.200 BSC | — |
| H1 | 6.700 | 7.000 | 7.300 |
| k | — | 3.000 REF | — |
| k1 | — | 4.550 REF | — |
| L | 1.350 | — | 2.100 |
| L1 | — | 0.700 REF | — |
| L2 | — | 0.600 REF | — |
| L3 | 0.950 | 1.200 | 1.350 |
单位：MILLIMETERS
Recommended Soldering Footprint
（焊盘推荐图略）
尺寸（DIMENSIONS: MILLIMETERS）：10.100 × 13.300；内部焊盘 8.000 × 2.500；引脚区 2.800；引脚节距 1.200；引脚宽 0.800；引脚末端宽 0.400