Specifications
- Package
- PDFN5060-8L-D
- Configuration
- N+P
- VDS_Max
- 40 / -40 V
- ID
- 44 / -42 A
- RDS(ON)_Max @VGS=10V
- 10.0 / 15.0 mΩ
- Automotive (Y/N)
- Y
- VGS(th)_Typ
- 1.7 / -1.8 V
- RDS(ON)_Typ @VGS=10V
- 8.0 / 11.5 mΩ
- RDS(ON)_Typ @VGS=4.5V
- 10.7 / 16.3 mΩ
- RDS(ON)_Max @VGS=4.5V
- 14.0 / 22.0 mΩ
- VGS_Max
- ±20 V
- Tj
- 175 °C
- EAS_Max
- 40 / 102 mJ
- Ciss_Typ
- 444 / 1071 pF
- Coss_Typ
- 283 / 631 pF
- Crss_Typ
- 16.0 / 26.0 pF
- Qg_Typ
- 6.8 / 15.1 nC
- ESD
- No
- MPQ
- 5000 pcs
- MOQ
- 50000 pcs
- App: Motor Drive
- Y
- App: General Switch
- Y
Not sure how to choose? Read the LV & MV MOSFETs Selection Guide →
Package & Schematic
Package outline · Pin configuration · Schematic (from SineSemi official datasheet)Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SMC4010ALPDQ
40V Dual N & P-Channel MOSFET
Sinesemi Automotive MOSFET — AEC-Q101 Qualified, PPAP Capable
Product Summary
| Parameter |
N-Ch |
P-Ch |
Unit |
| VDS |
40 |
-40 |
V |
| ID |
44 |
-42 |
A |
| RDS(ON), max @ VGS = 10V |
10.0 |
15.0 |
mΩ |
| RDS(ON), max @ VGS = 4.5V |
14.0 |
22 |
mΩ |
PDFN5060-8L-D
Features
- N&P-Channel Enhancement Mode - Logic Level
- AEC-Q101 Qualified, PPAP Capable
- 175°C Operating Temperature
- 100% ∆V/DS & UIL & RG Tested
Application
- General Automotive Applications
Mechanical Data
- Green Molding Compound
- Moisture Sensitivity: Level 1 per J-STD-020
- UL Flammability Classification Rating 94V-0
Ordering Information
| Orderable Part Number |
Package Type |
Device Marking |
Form |
Quantity (pcs) |
| SMC4010ALPDQ |
PDFN5060-8L-D |
C4010ALDQ |
13" Tape&Reel |
5,000 |
Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
N-Ch |
P-Ch |
Unit |
| Drain - Source Voltage |
VDS |
40 |
-40 |
V |
| Gate - Source Voltage |
VGS |
±20 |
±20 |
V |
| Continuous Drain Current (VGS = 10V) (1) TC = 25°C |
ID |
44 |
-42 |
A |
| Continuous Drain Current TC = 100°C |
ID |
31 |
-30 |
A |
| Pulsed Drain Current (2) |
IDM |
124 |
-169 |
A |
| Single Pulse Avalanche Energy (3) |
EAS |
40 |
102 |
mJ |
| Single Pulse Avalanche Current (L = 0.1mH) |
IAS |
16 |
-25 |
A |
| Power Dissipation TC = 25°C |
PD |
34 |
44 |
W |
| Power Dissipation TC = 100°C |
PD |
17 |
22 |
W |
| Junction & Storage Temperature Range |
TJ, TSTG |
-55 ~ +175 |
-55 ~ +175 |
°C |
Thermal Characteristics
| Parameter |
Symbol |
N-Ch |
|
P-Ch |
|
Unit |
|
|
Typ |
Max |
Typ |
Max |
|
| Thermal Resistance, Junction-to-Ambient (4) |
R_θJA |
55 |
69 |
50 |
63 |
°C/W |
| Thermal Resistance, Junction-to-Case (5) |
R_θJC |
3.4 |
4.4 |
2.6 |
3.4 |
°C/W |
Electrical Characteristics - N-Channel (@ TJ = 25°C, unless otherwise specified.)
Off Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Drain-Source Breakdown Voltage |
V(BR)DSS |
VGS = 0V, ID = 250µA |
40 |
— |
— |
V |
| Zero Gate Voltage Drain Current |
IDSS |
VDS = 40V, VGS = 0V |
— |
— |
1.0 |
µA |
|
|
TJ = 125°C |
— |
— |
100 |
µA |
| Gate-Source Leakage Current |
IGSS |
VGS = ±20V, VDS = 0V |
— |
— |
±100 |
nA |
On Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Gate Threshold Voltage |
VGS(th) |
VDS = VGS, ID = 250µA |
1.2 |
1.7 |
2.5 |
V |
| Static Drain-Source On-Resistance |
RDS(on) |
VGS = 10V, ID = 8.0A |
— |
8.0 |
10.0 |
mΩ |
|
|
VGS = 4.5V, ID = 6.0A |
— |
10.7 |
14.0 |
mΩ |
| Forward Transconductance |
gfs |
VDS = 5.0V, ID = 8.0A |
— |
14 |
— |
S |
| Diode Forward Voltage |
VSD |
IS = 2.0A, VGS = 0V |
— |
0.7 |
1.2 |
V |
Dynamic Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Input Capacitance |
Ciss |
VDS = 20V, VGS = 0V, f = 1MHz |
— |
444 |
577 |
pF |
| Output Capacitance |
Coss |
|
— |
283 |
368 |
pF |
| Reverse Transfer Capacitance |
Crss |
|
— |
16 |
32 |
pF |
| Gate Resistance |
Rg |
VGS = 0V, VDS = 0V, f = 1MHz |
— |
6.8 |
— |
Ω |
Switching Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Turn-On Delay Time |
td(on) |
VGS = 10V, VDS = 20V |
— |
1.9 |
— |
ns |
| Rise Time |
tr |
ID = 8.0A, RGEN = 3.0Ω |
— |
6.7 |
— |
ns |
| Turn-Off Delay Time |
td(off) |
|
— |
12 |
— |
ns |
| Fall Time |
tf |
|
— |
7.2 |
— |
ns |
Gate Charge Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Total Gate Charge (VGS = 10V) |
Qg |
VDS = 20V, ID = 8.0A |
— |
6.8 |
8.9 |
nC |
| Total Gate Charge (VGS = 4.5V) |
Qg |
|
— |
3.3 |
4.3 |
nC |
| Gate-Source Charge |
Qgs |
VGS = 10V |
— |
1.3 |
2.0 |
nC |
| Gate-Drain Charge |
Qgd |
|
— |
1.0 |
1.5 |
nC |
| Gate Plateau Voltage |
Vplateau |
|
— |
3.0 |
— |
V |
Drain-Source Diode Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Body Diode Reverse Recovery Time |
trr |
IS = 8.0A, di/dt = 100A/µs |
— |
20 |
— |
ns |
| Body Diode Reverse Recovery Charge |
Qrr |
TJ = 25°C |
— |
5.5 |
— |
nC |
| Diode Forward Current |
IS |
TC = 25°C |
— |
— |
39 |
A |
Notes:
- This current is chip limited, which is calculated based on RθJC.
- This current is calculated on single pulse with 10µs Single Pulse.
- Defined by design, not subject to production test. TJ=25°C, VDD=20V, VGS=10V, L=0.1mH.
- Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
- Thermal resistance from junction to the exposed pad.
- Short duration pulse test used to minimize self-heating effect.
- Defined by design; not subject to production.
Electrical Characteristics - P-Channel (@ TJ = 25°C, unless otherwise specified.)
Off Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Drain-Source Breakdown Voltage |
V(BR)DSS |
VGS = 0V, ID = -250µA |
-40 |
— |
— |
V |
| Zero Gate Voltage Drain Current |
IDSS |
VDS = -40V, VGS = 0V |
— |
— |
-1.0 |
µA |
|
|
TJ = 125°C |
— |
— |
-100 |
µA |
| Gate-Source Leakage Current |
IGSS |
VGS = ±20V, VDS = 0V |
— |
— |
±100 |
nA |
On Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Gate Threshold Voltage |
VGS(th) |
VDS = VGS, ID = -250µA |
-1.2 |
-1.8 |
-2.5 |
V |
| Static Drain-Source On-Resistance |
RDS(on) |
VGS = -10V, ID = -8.0A |
— |
11.5 |
15.0 |
mΩ |
|
|
VGS = -4.5V, ID = -6.0A |
— |
16.3 |
22 |
mΩ |
| Forward Transconductance |
gfs |
VDS = -5.0V, ID = -8.0A |
— |
20 |
— |
S |
| Diode Forward Voltage |
VSD |
IS = -2.0A, VGS = 0V |
— |
-0.7 |
-1.2 |
V |
Dynamic Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Input Capacitance |
Ciss |
VDS = -20V, VGS = 0V, f = 1MHz |
— |
1071 |
1392 |
pF |
| Output Capacitance |
Coss |
|
— |
631 |
820 |
pF |
| Reverse Transfer Capacitance |
Crss |
|
— |
26 |
52 |
pF |
| Gate Resistance |
Rg |
VGS = 0V, VDS = 0V, f = 1MHz |
— |
15 |
— |
Ω |
Switching Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Turn-On Delay Time |
td(on) |
VGS = -10V, VDS = -20V |
— |
3.3 |
— |
ns |
| Rise Time |
tr |
ID = -8.0A, RGEN = 3.0Ω |
— |
11 |
— |
ns |
| Turn-Off Delay Time |
td(off) |
|
— |
44 |
— |
ns |
| Fall Time |
tf |
|
— |
19 |
— |
ns |
Gate Charge Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Total Gate Charge (VGS = -10V) |
Qg |
VDS = -20V, ID = -8.0A |
— |
15.1 |
20 |
nC |
| Total Gate Charge (VGS = -4.5V) |
Qg |
|
— |
6.7 |
8.7 |
nC |
| Gate-Source Charge |
Qgs |
VGS = -10V |
— |
3.3 |
5.0 |
nC |
| Gate-Drain Charge |
Qgd |
|
— |
1.6 |
2.4 |
nC |
| Gate Plateau Voltage |
Vplateau |
|
— |
3.3 |
— |
V |
Drain-Source Diode Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Body Diode Reverse Recovery Time |
trr |
IS = -8.0A, di/dt = 100A/µs |
— |
31 |
— |
ns |
| Body Diode Reverse Recovery Charge |
Qrr |
TJ = 25°C |
— |
13 |
— |
nC |
| Diode Forward Current |
IS |
TC = 25°C |
— |
— |
-42 |
A |
