Product Detail
QH4012AHP
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Specifications
- Package
- PDFN5060-8L
- Configuration
- N
- VDS_Max
- 40 V
- ID
- 212 A
- RDS(ON)_Max @VGS=10V
- 1.4 mΩ
- VGS(th)_Typ
- 3 V
- Vth Min
- 2 V
- Vth Max
- 4 V
- RDS(ON)_Typ @VGS=10V
- 1.2 mΩ
- VGS_Max
- ±20 V
- Tj
- -55~+150 °C
- EAS_Max
- 436 mJ
- Ciss_Typ
- 3073 pF
- Coss_Typ
- 1515 pF
- Crss_Typ
- 58 pF
- Qg_Typ
- 41 nC
- MPQ
- 5000 pcs
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Online Datasheet
Full text of this part's datasheet; refer to the latest revision for updates.
QH4012AHP
40 V N-Channel Power MOSFET
DATASHEET
Features
- Low On-Resistance
- Excellent FoM (figure of merit)
- 100% UIS and Rg tested
Applications
- Load Switching
- Motor driver
- High frequency switching, synchronous rectification
Product Summary
| Parameter | Value | Unit |
|---|---|---|
| VDS | 40 | V |
| RDS(on),TYP @ VGS = 10 V | 1.2 | mΩ |
| ID @ VGS = 10 V, T = 25 °C | 212 | A |
Ordering Information
| Orderable Part Number | Package Type | Device Marking | Form | Quantity (pcs) |
|---|---|---|---|---|
| QH4012AHP | PDFN5060-8L | QH4012AH | 13″ Tape & Reel | 5,000 |
Absolute Maximum Ratings
（@ TC = 25 °C, unless otherwise specified.）
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain – Source Voltage | VDS | 40 | V |
| Gate – Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (VGS = 10 V) (1), TC = 25 °C | ID | 212 | A |
| Continuous Drain Current (VGS = 10 V) (1), TC = 100 °C | ID | 134 | A |
| Pulsed Drain Current (2) | IDM | 850 | A |
| Single Pulse Avalanche Energy (3) | EAS | 436 | mJ |
| Single Pulse Avalanche Current (L = 0.1 mH) | IAS | 56 | A |
| Power Dissipation, TC = 25 °C | PD | 104 | W |
| Power Dissipation, TC = 100 °C | PD | 42 | W |
| Junction and Storage Temperature Range | TJ, TSTG | −55 ~ +150 | °C |
Thermal Characteristics
| Parameter | Symbol | Typ. | Max. | Unit |
|---|---|---|---|---|
| Thermal Resistance, Junction-to-Ambient (4) | RθJA | 35 | 45 | °C/W |
| Thermal Resistance, Junction-to-Case (5) | RθJC | 0.9 | 1.2 | °C/W |
Electrical Characteristics
（@ TJ = 25 °C, unless otherwise specified.）
Off Characteristics (6)
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain–Source Breakdown Voltage | V(BR)DSS | VGS = 0 V, ID = 250 μA | 40 | — | — | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = 40 V, VGS = 0 V | — | — | 1.0 | μA |
| Zero Gate Voltage Drain Current | IDSS | VDS = 40 V, VGS = 0 V, TJ = 125 °C | — | — | 100 | μA |
| Gate–Source Leakage Current | IGSS | VGS = ±20 V, VDS = 0 V | — | — | ±100 | nA |
On Characteristics (6)
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | VGS = VDS, ID = 250 μA | 2.0 | 3.0 | 4.0 | V |
| Static Drain–Source On-Resistance | RDS(ON) | VGS = 10 V, ID = 20 A | — | 1.2 | 1.4 | mΩ |
| Forward Transconductance | gfs | VDS = 5.0 V, ID = 20 A | — | 34 | — | S |
| Diodes Forward Voltage | VSD | IS = 2.0 A, VGS = 0 V | — | 0.7 | 1.2 | V |
Dynamic Characteristics (7)
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Input Capacitance | Ciss | VDS = 20 V, VGS = 0 V, f = 1 MHz | — | 3073 | — | pF |
| Output Capacitance | Coss | VDS = 20 V, VGS = 0 V, f = 1 MHz | — | 1515 | — | pF |
| Reverse Transfer Capacitance | Crss | VDS = 20 V, VGS = 0 V, f = 1 MHz | — | 58 | — | pF |
| Gate Resistance | Rg | VGS = 0 V, VDS = 0 V, f = 1 MHz | — | 1.4 | — | Ω |
Switching Characteristics (7)
（测试条件：VGS = 10 V, VDS = 20 V, ID = 20 A, RGEN = 3.0 Ω）
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Turn-On Delay Time | td(on) | — | 5.6 | — | ns |
| Rise Time | tr | — | 15 | — | ns |
| Turn-Off Delay Time | td(off) | — | 20 | — | ns |
| Fall Time | tf | — | 9.9 | — | ns |
Gate Charge Characteristics (7)
（测试条件：VDS = 20 V, ID = 20 A, VGS = 10 V）
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Total Gate Charge (VGS = 10 V) | Qg | — | 41 | — | nC |
| Total Gate Charge (VGS = 6.0 V) | Qg | — | 26 | — | nC |
| Gate–Source Charge | Qgs | — | 14 | — | nC |
| Gate–Drain Charge | Qgd | — | 7.5 | — | nC |
| Gate Plateau Voltage | Vplateau | — | 5.0 | — | V |
Drain–Source Diode Characteristics (7)
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Body Diode Reverse Recovery Time | trr | IF = 20 A, dI/dt = 100 A/μs, TJ = 25 °C | — | 46 | — | ns |
| Body Diode Reverse Recovery Charge | Qrr | IF = 20 A, dI/dt = 100 A/μs, TJ = 25 °C | — | 50 | — | nC |
| Diode Forward Current | IS | TC = 25 °C | — | — | 132 | A |
Package Dimensions
（PDFN5060-8L, dimensions in millimeters unless noted.）
| Dimension | Min. | Nom. | Max. |
|---|---|---|---|
| A | 0.90 | 1.00 | 1.10 |
| b | 0.20 | — | 0.51 |
| c | 0.21 | 0.25 | 0.34 |
| D | 4.90 | — | 5.40 |
| D1 | 4.80 | — | 5.15 |
| D2 | 3.91 | — | 4.20 |
| E | 5.90 | — | 6.50 |
| E1 | 5.65 | 5.80 | 5.95 |
| E2 | 3.32 | 3.50 | 3.63 |
| e | 1.27 BSC | ||
| H | 0.50 | — | 0.93 |
| L | 0.45 | — | 0.91 |
| θ | 0° | — | 12° |
Dimensioning and tolerancing per ASME Y14.5M, 1994. All dimensions in millimeter (angle in degree). Dimensions D1 and E1 do not include mold flash protrusions or gate burrs.
Notes
- This current is chip limited, which is calculated based on RθJC.
- This current is calculated on single pulse with 10 μs Pulse & Duty Cycle = 1%.
- Defined by design, not subject to production test, EAS condition: TJ = 25 °C, VDD = 20 V, VGS = 10 V, L = 1.0 mH.
- Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
- Thermal resistance from junction to soldering point (on the exposed drain pad).
- Short duration pulse test used to minimize self-heating effect.
- Defined by design, not subject to production.
Important Notice
Information in this document is provided solely for reference in connection with the product identified herein. No license, express or implied, to any intellectual property rights is granted by this document. Specifications are subject to change without notice. The product is not designed for use in life support systems.