SMC4010ALPDQ 产品图

产品详情

SMC4010ALPDQ

中晶新源 SineSemi核心代理商

中低压 MOSFET车规PDFN5060-8L-D
规格书下载

参数规格

封装
PDFN5060-8L-D
结构
N+P
漏源电压 VDS
40 / -40 V
漏极电流 ID
44 / -42 A
导通电阻 RDS(ON)@10V 最大
10.0 / 15.0 mΩ
车规 (Y/N)
Y
阈值电压 VGS(th) 典型
1.7 / -1.8 V
导通电阻 RDS(ON)@10V 典型
8.0 / 11.5 mΩ
导通电阻 RDS(ON)@4.5V 典型
10.7 / 16.3 mΩ
导通电阻 RDS(ON)@4.5V 最大
14.0 / 22.0 mΩ
栅源电压 VGS 最大
±20 V
结温 Tj
175 °C
雪崩能量 EAS 最大
40 / 102 mJ
输入电容 Ciss 典型
444 / 1071 pF
输出电容 Coss 典型
283 / 631 pF
反向传输电容 Crss 典型
16.0 / 26.0 pF
总栅极电荷 Qg 典型
6.8 / 15.1 nC
ESD
No
最小包装量
5000 pcs
最小订购量
50000 pcs
应用推荐-马达驱动
Y
应用推荐-通用开关
Y

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封装与电路符号

SMC4010ALPDQ 封装外形、引脚配置与电路符号图
封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet）

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMC4010ALPDQ

40V Dual N & P-Channel MOSFET

Sinesemi Automotive MOSFET — AEC-Q101 Qualified, PPAP Capable

Product Summary
Parameter N-Ch P-Ch Unit
VDS 40 -40 V
ID 44 -42 A
RDS(ON), max @ VGS = 10V 10.0 15.0 mΩ
RDS(ON), max @ VGS = 4.5V 14.0 22 mΩ

PDFN5060-8L-D

Features
  • N&P-Channel Enhancement Mode - Logic Level
  • AEC-Q101 Qualified, PPAP Capable
  • 175°C Operating Temperature
  • 100% ∆V/DS & UIL & RG Tested
Application
  • General Automotive Applications
Mechanical Data
  • Green Molding Compound
  • Moisture Sensitivity: Level 1 per J-STD-020
  • UL Flammability Classification Rating 94V-0
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMC4010ALPDQ PDFN5060-8L-D C4010ALDQ 13" Tape&Reel 5,000
Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
Parameter Symbol N-Ch P-Ch Unit
Drain - Source Voltage VDS 40 -40 V
Gate - Source Voltage VGS ±20 ±20 V
Continuous Drain Current (VGS = 10V) (1) TC = 25°C ID 44 -42 A
Continuous Drain Current TC = 100°C ID 31 -30 A
Pulsed Drain Current (2) IDM 124 -169 A
Single Pulse Avalanche Energy (3) EAS 40 102 mJ
Single Pulse Avalanche Current (L = 0.1mH) IAS 16 -25 A
Power Dissipation TC = 25°C PD 34 44 W
Power Dissipation TC = 100°C PD 17 22 W
Junction & Storage Temperature Range TJ, TSTG -55 ~ +175 -55 ~ +175 °C
Thermal Characteristics
Parameter Symbol N-Ch P-Ch Unit
Typ Max Typ Max
Thermal Resistance, Junction-to-Ambient (4) R_θJA 55 69 50 63 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC 3.4 4.4 2.6 3.4 °C/W

Electrical Characteristics - N-Channel (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 40 — — V
Zero Gate Voltage Drain Current IDSS VDS = 40V, VGS = 0V — — 1.0 µA
TJ = 125°C — — 100 µA
Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V — — ±100 nA
On Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.2 1.7 2.5 V
Static Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 8.0A — 8.0 10.0 mΩ
VGS = 4.5V, ID = 6.0A — 10.7 14.0 mΩ
Forward Transconductance gfs VDS = 5.0V, ID = 8.0A — 14 — S
Diode Forward Voltage VSD IS = 2.0A, VGS = 0V — 0.7 1.2 V
Dynamic Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance Ciss VDS = 20V, VGS = 0V, f = 1MHz — 444 577 pF
Output Capacitance Coss — 283 368 pF
Reverse Transfer Capacitance Crss — 16 32 pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 6.8 — Ω
Switching Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time td(on) VGS = 10V, VDS = 20V — 1.9 — ns
Rise Time tr ID = 8.0A, RGEN = 3.0Ω — 6.7 — ns
Turn-Off Delay Time td(off) — 12 — ns
Fall Time tf — 7.2 — ns
Gate Charge Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (VGS = 10V) Qg VDS = 20V, ID = 8.0A — 6.8 8.9 nC
Total Gate Charge (VGS = 4.5V) Qg — 3.3 4.3 nC
Gate-Source Charge Qgs VGS = 10V — 1.3 2.0 nC
Gate-Drain Charge Qgd — 1.0 1.5 nC
Gate Plateau Voltage Vplateau — 3.0 — V
Drain-Source Diode Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Body Diode Reverse Recovery Time trr IS = 8.0A, di/dt = 100A/µs — 20 — ns
Body Diode Reverse Recovery Charge Qrr TJ = 25°C — 5.5 — nC
Diode Forward Current IS TC = 25°C — — 39 A

Notes:

  1. This current is chip limited, which is calculated based on RθJC.
  2. This current is calculated on single pulse with 10µs Single Pulse.
  3. Defined by design, not subject to production test. TJ=25°C, VDD=20V, VGS=10V, L=0.1mH.
  4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  5. Thermal resistance from junction to the exposed pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design; not subject to production.

Electrical Characteristics - P-Channel (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -40 — — V
Zero Gate Voltage Drain Current IDSS VDS = -40V, VGS = 0V — — -1.0 µA
TJ = 125°C — — -100 µA
Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V — — ±100 nA
On Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1.2 -1.8 -2.5 V
Static Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -8.0A — 11.5 15.0 mΩ
VGS = -4.5V, ID = -6.0A — 16.3 22 mΩ
Forward Transconductance gfs VDS = -5.0V, ID = -8.0A — 20 — S
Diode Forward Voltage VSD IS = -2.0A, VGS = 0V — -0.7 -1.2 V
Dynamic Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance Ciss VDS = -20V, VGS = 0V, f = 1MHz — 1071 1392 pF
Output Capacitance Coss — 631 820 pF
Reverse Transfer Capacitance Crss — 26 52 pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 15 — Ω
Switching Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time td(on) VGS = -10V, VDS = -20V — 3.3 — ns
Rise Time tr ID = -8.0A, RGEN = 3.0Ω — 11 — ns
Turn-Off Delay Time td(off) — 44 — ns
Fall Time tf — 19 — ns
Gate Charge Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (VGS = -10V) Qg VDS = -20V, ID = -8.0A — 15.1 20 nC
Total Gate Charge (VGS = -4.5V) Qg — 6.7 8.7 nC
Gate-Source Charge Qgs VGS = -10V — 3.3 5.0 nC
Gate-Drain Charge Qgd — 1.6 2.4 nC
Gate Plateau Voltage Vplateau — 3.3 — V
Drain-Source Diode Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Body Diode Reverse Recovery Time trr IS = -8.0A, di/dt = 100A/µs — 31 — ns
Body Diode Reverse Recovery Charge Qrr TJ = 25°C — 13 — nC
Diode Forward Current IS TC = 25°C — — -42 A
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