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SMN1202ACP10
中晶新源 SineSemi核心代理商
中低压 MOSFETCSP3015-10
参数规格
- 封装
- CSP3015-10
- 结构
- N
- 漏源电压 VDS
- 12 V
- 漏极电流 ID
- 29 A
- 车规 (Y/N)
- N
- 阈值电压 VGS(th) 典型
- 0.9 V
- 导通电阻 RDS(ON)@4.5V 典型
- 2.1 mΩ
- 导通电阻 RDS(ON)@4.5V 最大
- 2.7 mΩ
- 栅源电压 VGS 最大
- ±12 V
- 结温 Tj
- 150 °C
- 总栅极电荷 Qg 典型
- 31 nC
- ESD
- Yes
- 最小包装量
- 3000 pcs
- 最小订购量
- 30000 pcs
- 应用推荐-锂电池保护
- Y
- 应用推荐-通用开关
- Y
- 导通电阻 RDS(ON)@2.5V 典型
- 3.2 mΩ
- 导通电阻 RDS(ON)@2.5V 最大
- 6 mΩ
不确定怎么选？阅读《中低压 MOSFET 选型指南》 →
封装与电路符号
封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet）在线规格书
以下内容整理自原厂规格书，实际参数以原厂正式文件为准。
SMN1202ACP10
12V Common-Drain Dual N-Channel Power MOSFET
Product Summary
| VSS |
RSS(ON), max |
IS, max |
| 12 V |
2.7 mΩ @ VGS = 4.5V |
29 A |
|
2.8 mΩ @ VGS = 3.8V |
|
|
3.9 mΩ @ VGS = 3.1V |
|
|
6.0 mΩ @ VGS = 2.5V |
|
CSP3015-10
Features
- Trench Technology
- ESD Protected Gate
- Common-Drain Type
- Super High Density Cell Design
- Extremely Low Threshold Voltage
- Excellent Source to Source On-Resistance
- RoHS compliant, HALOGEN FREE, Pb-Free
Applications
- Li-battery Protection Circuit
Ordering Information
| Orderable Part Number |
Package Type |
Device Marking |
Form |
Quantity (pcs) |
| SMN1202ACP10 |
CSP3015-10 |
1202AP10 |
7" Tape&Reel |
3,000 |
Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Value |
Unit |
| Source - Source Voltage |
VSS |
12 |
V |
| Gate - Source Voltage |
VGS |
±8 |
V |
| Continuous Source Current (VGS = 4.5V) (1) |
IS |
13.8 |
A |
| Continuous Source Current (VGS = 4.5V) (2) |
IS |
29 |
A |
| Pulsed Source Current (3) |
ISM |
140 |
A |
| Power Dissipation (1) |
PD |
0.57 |
W |
| Power Dissipation (2) |
PD |
3.5 |
W |
| Junction & Storage Temperature Range |
TJ, TSTG |
-55 ~ +150 |
°C |
Thermal Characteristics
| Parameter |
Symbol |
Typ |
Max |
Unit |
| Thermal Resistance, Junction-to-Ambient (1) |
R_θJA |
155 |
220 |
°C/W |
| Thermal Resistance, Junction-to-Ambient (2) |
R_θJA |
30 |
36 |
°C/W |
Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)
Off Characteristics (4)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Source-Source Breakdown Voltage |
VSSS |
VGS = 0V, ID = 1.0mA |
12 |
— |
— |
V |
| Zero Gate Voltage Drain Current |
ISSS |
VSS = 12V, VGS = 0V (Test Circuit1) |
— |
— |
1.0 |
µA |
| Gate-Source Leakage Current |
IGSS |
VGS = ±8.0V, VSS = 0V (Test Circuit2) |
— |
— |
±10 |
µA |
On Characteristics (4)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Gate Threshold Voltage |
VGS(th) |
VSS = 10V, IS = 1.1mA (Test Circuit3) |
0.5 |
0.9 |
1.4 |
V |
| Static Source-Source On-Resistance |
RSS(on) |
VGS = 4.5V, IS = 6.0A (Test Circuit4) |
1.5 |
2.1 |
2.7 |
mΩ |
|
|
VGS = 3.8V, IS = 6.0A |
1.6 |
2.2 |
2.8 |
mΩ |
|
|
VGS = 3.1V, IS = 6.0A |
1.7 |
2.6 |
3.9 |
mΩ |
|
|
VGS = 2.5V, IS = 6.0A |
1.9 |
3.2 |
6.0 |
mΩ |
| Diodes Forward Voltage |
VF(S-S) |
IS = 2.0A, VGS = 0V (Test Circuit7) |
— |
0.7 |
1.0 |
V |
Switching Characteristics (5)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Turn-On Delay Time |
td(on) |
VGS = 4.5V, VSS = 6.0V (Test Circuit5) |
— |
0.5 |
— |
µs |
| Rise Time |
tr |
IS = 6.0A, RGEN = 3.0Ω |
— |
1.8 |
— |
µs |
| Turn-Off Delay Time |
td(off) |
|
— |
3.0 |
— |
µs |
| Fall Time |
tf |
|
— |
6.3 |
— |
µs |
Gate Charge Characteristics (5)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Total Gate Charge (VGS = 4.5V) |
Qg |
VGS = 4.5V, VSS = 6.0V (Test Circuit6) |
— |
31 |
— |
nC |
| Gate-Source Charge |
Qgs |
IS = 6.0A |
— |
7.4 |
— |
nC |
| Gate-Drain Charge |
Qgd |
|
— |
8.7 |
— |
nC |
Notes:
- Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
- Device mounted on Ceramic substrate (70mm X 70mm X t1.0mm, 2oz Copper) fully covered with copper.
- This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
- Short duration pulse test used to minimize self-heating effect.
- Defined by design, not subject to production.
