SMJ65R022AFY product image

Product Detail

SMJ65R022AFY

SineSemi 中晶新源Core Authorized Distributor

HV MOSFETsTO247-3L

Specifications

Package
TO247-3L
Tj
150 °C
VDS_Max
650 V
ID_Max
105 A
RDS(ON)_Typ @VGS=10V
18.5 mΩ
RDS(ON)_Max @VGS=10V
22 mΩ
VGS_Max
±30 V
EAS_Max
3420 mJ
Ciss_Typ
11200 pF
Coss_Typ
500 pF
Crss_Typ
6 pF
Qg_Typ
142 nC

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Online Datasheet

Compiled from the manufacturer's datasheet; the official document prevails.

SMJ65R022AFY

650V Super Junction N-Channel Power MOSFET

Product Summary
VDS RDS(ON), max ID, max
650 V 22 mΩ @ VGS = 10V 105 A

TO247-3L

Features
  • Low On-Resistance
  • Fast Switching Capability
  • Ultra fast body diode
  • 100% UIS and Rg tested
  • RoHS compliant, HALOGEN FREE
Applications
  • Motor Drive
  • Li- Battery Protection
  • Power Management for High Performance Application
Mechanical Data
  • Green Molding Compound
  • Moisture Sensitivity: Level 3 per J-STD-020
  • UL Flammability Classification Rating 94V-0
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMJ65R022AFY TO247-3L 65R022AF Tube 30
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS 650 V
Gate - Source Voltage VGS ±30 V
Continuous Drain Current (VGS = 10V) (1) ID TA = 25°C: 105 A
TA = 125°C: 47 A
Pulsed Drain Current (2) IDM 315 A
Single Pulse Avalanche Energy (3) EAS 3420 mJ
Power Dissipation PD TA = 25°C: 625 W
MOSFET dv/dt Ruggedness, VDS = 0...480V — dv/dt 50
Reverse Diodes dv/dt, VDS = 0...400V, IDR < IS — dv/dt 50
Junction & Storage Temperature Range TJ, TSTG -55 ~ +150 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA — 62 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC — 0.2 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 1.0mA 650 — — V
Zero Gate Voltage Drain Current IDSS VDS = 650V, VGS = 0V — — 10 µA
Gate-Source Leakage Current IGSS VGS = ±30V, VDS = 0V — — ±100 nA
On Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 2.0mA 3.0 — 4.5 V
Static Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 57A (TC = 25°C) — 18.5 22 mΩ
VGS = 10V, ID = 57A (TC = 125°C) — 45 60 mΩ
Diodes Forward Voltage VSD IS = 57A, VGS = 0V — 0.88 — V
Dynamic Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance Ciss VDS = 50V, VGS = 0V, f = 250kHz — 11200 — pF
Output Capacitance Coss — 500 — pF
Reverse Transfer Capacitance Crss — 6.0 — pF
Effective Output Capacitance, Energy Related (8) Co(er) VDS = 0V... — 375 — pF
Effective Output Capacitance, Time Related (9) Co(tr) VDS = 0...400V — 1990 — pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 2.1 — Ω
Switching Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time td(on) VGS = 10V, VDS = 400V — 64 — ns
Rise Time tr ID = 57A — 18 — ns
Turn-Off Delay Time td(off) RG = 5Ω — 75 — ns
Fall Time tf — 6.0 — ns
Gate Charge Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (VGS = 10V) Qg VDS = 480V, ID = 57A — 142 — nC
Gate-Source Charge Qgs VDS = 0 to 10V — 66 — nC
Gate-Drain Charge Qgd — 18.5 — nC
Gate Plateau Voltage Vplateau — 6.0 — V
Drain-Source Diode Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Body Diode Reverse Recovery Time trr IS = 50A, di/dt = 150A/µs, VR = 400V — 220 — ns
Body Diode Reverse Recovery Charge Qrr TJ = 25°C — 3.2 — µC
Body Diode Reverse Recovery Current IRRM — 27 — A
Diode Forward Current IS TA = 25°C — — 105 A

Notes:

  1. This current is chip limited, which is calculated based on RθJC.
  2. This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
  3. Defined by design, not subject to production test. TJ=25°C, VDS=50V, VGS=10V, L=22A.
  4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  5. Thermal resistance from junction to soldering point (on the exposed drain pad).
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design; not subject to production.
  8. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 480V.
  9. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 480V.
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