产品详情
SMJ65R022AFY
中晶新源 SineSemi核心代理商
高压 MOSFETTO247-3L
参数规格
- 封装
- TO247-3L
- 结温 Tj
- 150 °C
- 漏源电压 VDS
- 650 V
- 漏极电流 ID
- 105 A
- 导通电阻 RDS(ON)@10V 典型
- 18.5 mΩ
- 导通电阻 RDS(ON)@10V 最大
- 22 mΩ
- 栅源电压 VGS 最大
- ±30 V
- 雪崩能量 EAS 最大
- 3420 mJ
- 输入电容 Ciss 典型
- 11200 pF
- 输出电容 Coss 典型
- 500 pF
- 反向传输电容 Crss 典型
- 6 pF
- 总栅极电荷 Qg 典型
- 142 nC
不确定怎么选？阅读《高压 MOSFET 选型指南》 →
在线规格书
以下内容整理自原厂规格书，实际参数以原厂正式文件为准。
SMJ65R022AFY
650V Super Junction N-Channel Power MOSFET
Product Summary
| VDS |
RDS(ON), max |
ID, max |
| 650 V |
22 mΩ @ VGS = 10V |
105 A |
TO247-3L
Features
- Low On-Resistance
- Fast Switching Capability
- Ultra fast body diode
- 100% UIS and Rg tested
- RoHS compliant, HALOGEN FREE
Applications
- Motor Drive
- Li- Battery Protection
- Power Management for High Performance Application
Mechanical Data
- Green Molding Compound
- Moisture Sensitivity: Level 3 per J-STD-020
- UL Flammability Classification Rating 94V-0
Ordering Information
| Orderable Part Number |
Package Type |
Device Marking |
Form |
Quantity (pcs) |
| SMJ65R022AFY |
TO247-3L |
65R022AF |
Tube |
30 |
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Value |
Unit |
| Drain - Source Voltage |
VDS |
650 |
V |
| Gate - Source Voltage |
VGS |
±30 |
V |
| Continuous Drain Current (VGS = 10V) (1) |
ID |
TA = 25°C: 105 |
A |
|
|
TA = 125°C: 47 |
A |
| Pulsed Drain Current (2) |
IDM |
315 |
A |
| Single Pulse Avalanche Energy (3) |
EAS |
3420 |
mJ |
| Power Dissipation |
PD |
TA = 25°C: 625 |
W |
| MOSFET dv/dt Ruggedness, VDS = 0...480V |
— |
dv/dt |
50 |
| Reverse Diodes dv/dt, VDS = 0...400V, IDR < IS |
— |
dv/dt |
50 |
| Junction & Storage Temperature Range |
TJ, TSTG |
-55 ~ +150 |
°C |
Thermal Characteristics
| Parameter |
Symbol |
Typ |
Max |
Unit |
| Thermal Resistance, Junction-to-Ambient (4) |
R_θJA |
— |
62 |
°C/W |
| Thermal Resistance, Junction-to-Case (5) |
R_θJC |
— |
0.2 |
°C/W |
Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)
Off Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Drain-Source Breakdown Voltage |
V(BR)DSS |
VGS = 0V, ID = 1.0mA |
650 |
— |
— |
V |
| Zero Gate Voltage Drain Current |
IDSS |
VDS = 650V, VGS = 0V |
— |
— |
10 |
µA |
| Gate-Source Leakage Current |
IGSS |
VGS = ±30V, VDS = 0V |
— |
— |
±100 |
nA |
On Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Gate Threshold Voltage |
VGS(th) |
VDS = VGS, ID = 2.0mA |
3.0 |
— |
4.5 |
V |
| Static Drain-Source On-Resistance |
RDS(on) |
VGS = 10V, ID = 57A (TC = 25°C) |
— |
18.5 |
22 |
mΩ |
|
|
VGS = 10V, ID = 57A (TC = 125°C) |
— |
45 |
60 |
mΩ |
| Diodes Forward Voltage |
VSD |
IS = 57A, VGS = 0V |
— |
0.88 |
— |
V |
Dynamic Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Input Capacitance |
Ciss |
VDS = 50V, VGS = 0V, f = 250kHz |
— |
11200 |
— |
pF |
| Output Capacitance |
Coss |
|
— |
500 |
— |
pF |
| Reverse Transfer Capacitance |
Crss |
|
— |
6.0 |
— |
pF |
| Effective Output Capacitance, Energy Related (8) |
Co(er) |
VDS = 0V... |
— |
375 |
— |
pF |
| Effective Output Capacitance, Time Related (9) |
Co(tr) |
VDS = 0...400V |
— |
1990 |
— |
pF |
| Gate Resistance |
Rg |
VGS = 0V, VDS = 0V, f = 1MHz |
— |
2.1 |
— |
Ω |
Switching Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Turn-On Delay Time |
td(on) |
VGS = 10V, VDS = 400V |
— |
64 |
— |
ns |
| Rise Time |
tr |
ID = 57A |
— |
18 |
— |
ns |
| Turn-Off Delay Time |
td(off) |
RG = 5Ω |
— |
75 |
— |
ns |
| Fall Time |
tf |
|
— |
6.0 |
— |
ns |
Gate Charge Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Total Gate Charge (VGS = 10V) |
Qg |
VDS = 480V, ID = 57A |
— |
142 |
— |
nC |
| Gate-Source Charge |
Qgs |
VDS = 0 to 10V |
— |
66 |
— |
nC |
| Gate-Drain Charge |
Qgd |
|
— |
18.5 |
— |
nC |
| Gate Plateau Voltage |
Vplateau |
|
— |
6.0 |
— |
V |
Drain-Source Diode Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Body Diode Reverse Recovery Time |
trr |
IS = 50A, di/dt = 150A/µs, VR = 400V |
— |
220 |
— |
ns |
| Body Diode Reverse Recovery Charge |
Qrr |
TJ = 25°C |
— |
3.2 |
— |
µC |
| Body Diode Reverse Recovery Current |
IRRM |
|
— |
27 |
— |
A |
| Diode Forward Current |
IS |
TA = 25°C |
— |
— |
105 |
A |
Notes:
- This current is chip limited, which is calculated based on RθJC.
- This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
- Defined by design, not subject to production test. TJ=25°C, VDS=50V, VGS=10V, L=22A.
- Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
- Thermal resistance from junction to soldering point (on the exposed drain pad).
- Short duration pulse test used to minimize self-heating effect.
- Defined by design; not subject to production.
- Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 480V.
- Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 480V.
