Specifications
- Package
- TO247-3L
- Tj
- 150 °C
- VDS_Max
- 600 V
- ID_Max
- 83 A
- VGS(th)_Typ
- 3.7 V
- RDS(ON)_Typ @VGS=10V
- 33.5 mΩ
- RDS(ON)_Max @VGS=10V
- 40 mΩ
- VGS_Max
- ±20 V
- EAS_Max
- 1600 mJ
- Ciss_Typ
- 4001 pF
- Coss_Typ
- 89 pF
- Crss_Typ
- 26 pF
- Qg_Typ
- 140 nC
Not sure how to choose? Read the HV MOSFETs Selection Guide →
Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SMJ60R040CFY
600V Super Junction MOSFET
Product Summary
| VDS |
RDS(ON), max |
ID, max |
| 600 V |
40 mΩ @ VGS = 10V |
83 A |
TO247-3L
Features
- Low On-Resistance
- Excellent FoM (figure of merit)
- Ultra fast body diode
- 100% UIS and Rg tested
- RoHS compliant, HALOGEN FREE
Applications
- Motor Drive
- Li- Battery Protection
- Power Management for High Performance Application
Mechanical Data
- Green Molding Compound
- Moisture Sensitivity: Level 1 per J-STD-020
- UL Flammability Classification Rating 94V-0
Ordering Information
| Orderable Part Number |
Package Type |
Device Marking |
Form |
Quantity (pcs) |
| SMJ60R040CFY |
TO247-3L |
60R040CF |
Tube |
30 |
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Value |
Unit |
| Drain - Source Voltage |
VDS |
600 |
V |
| Gate - Source Voltage |
VGS |
±20 |
V |
| Continuous Drain Current (VGS = 10V) (1) |
ID |
TA = 25°C: 83 |
A |
|
|
TA = 100°C: 53 |
A |
| Pulsed Drain Current (2) |
IDM |
242 |
A |
| Single Pulse Avalanche Energy (3) |
EAS |
1600 |
mJ |
| Single Pulse Avalanche Current (L = 10mH) |
IAS |
— |
A |
| Power Dissipation |
PD |
TA = 25°C: 481 |
W |
|
|
TA = 100°C: 192 |
W |
| Junction & Storage Temperature Range |
TJ, TSTG |
-55 ~ +150 |
°C |
Thermal Characteristics
| Parameter |
Symbol |
Typ |
Max |
Unit |
| Thermal Resistance, Junction-to-Ambient (4) |
R_θJA |
28 |
35 |
°C/W |
| Thermal Resistance, Junction-to-Case (5) |
R_θJC |
0.22 |
0.26 |
°C/W |
Static Characteristics (@ TJ = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Drain-Source Breakdown Voltage |
V(BR)DSS |
VGS = 0V, ID = 1mA |
600 |
— |
— |
V |
| Zero Gate Voltage Drain Current |
IDSS |
VDS = 600V, VGS = 0V |
— |
— |
10.0 |
µA |
| Gate-Source Leakage Current |
IGSS |
VGS = ±20V, VDS = 0V |
— |
— |
±100 |
nA |
| Gate Threshold Voltage |
VGS(th) |
VGS = VDS, ID = 1mA |
2.6 |
3.7 |
5.6 |
V |
| Static Drain-Source On-Resistance |
RDS(on) |
VGS = 10V, ID = 25A |
— |
33.5 |
40 |
mΩ |
| Gate Resistance |
Rg |
VGS = 0V, VDS = 0V, f = 1MHz |
— |
1.2 |
— |
Ω |
Dynamic Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Input Capacitance |
Ciss |
VDS = 400V, VGS = 0V, f = 250kHz |
— |
4001 |
— |
pF |
| Output Capacitance |
Coss |
|
— |
89 |
— |
pF |
| Reverse Transfer Capacitance |
Crss |
|
— |
26 |
— |
pF |
| Effective Output Capacitance, Energy Related (8) |
Co(er) |
VGS = 0V, VDS = 0...400V |
— |
168 |
— |
pF |
| Effective Output Capacitance, Time Related (9) |
Co(tr) |
VDS = 0...400V |
— |
1450 |
— |
pF |
Switching Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Turn-On Delay Time |
td(on) |
VGS = 10V, VDS = 400V |
— |
41 |
— |
ns |
| Rise Time |
tr |
ID = 15.6A, RGEN = 3.6Ω |
— |
10 |
— |
ns |
| Turn-Off Delay Time |
td(off) |
|
— |
34 |
— |
ns |
| Fall Time |
tf |
|
— |
11 |
— |
ns |
Gate Charge Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Total Gate Charge |
Qg |
VDS = 400V, ID = 15.6A |
— |
140 |
— |
nC |
| Gate-Source Charge |
Qgs |
|
— |
23 |
— |
nC |
| Gate-Drain Charge |
Qgd |
VGS = 0 to 10V |
— |
75 |
— |
nC |
| Gate Plateau Voltage |
Vplateau |
|
— |
5.9 |
— |
V |
Reverse Diode Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Diodes Forward Voltage |
VSD |
IF = 25A, VGS = 0V |
— |
0.96 |
1.5 |
V |
| Body Diode Reverse Recovery Time |
trr |
IS = 15.6A, di/dt = 100A/µs, VDS = 400V |
— |
137 |
— |
ns |
| Body Diode Reverse Recovery Charge |
Qrr |
|
— |
6.62 |
— |
µC |
| Diode Forward Current |
IRM |
|
— |
10 |
— |
A |
| Diode dv/dt |
dv/dt |
VR = 400V, IF = 30A, di/dt = 200A/µs |
— |
124 |
— |
V/µs |
Notes:
- This current is chip limited, which is calculated based on RθJC.
- This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
- Single Pulse Avalanche Energy (L = 10mH).
- Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
- Thermal resistance from junction to soldering point (on the exposed drain pad).
- Short duration pulse test used to minimize self-heating effect.
- Defined by design; not subject to production.
