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SMJ60R040CFY

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高压 MOSFETTO247-3L

参数规格

封装
TO247-3L
结温 Tj
150 °C
漏源电压 VDS
600 V
漏极电流 ID
83 A
阈值电压 VGS(th) 典型
3.7 V
导通电阻 RDS(ON)@10V 典型
33.5 mΩ
导通电阻 RDS(ON)@10V 最大
40 mΩ
栅源电压 VGS 最大
±20 V
雪崩能量 EAS 最大
1600 mJ
输入电容 Ciss 典型
4001 pF
输出电容 Coss 典型
89 pF
反向传输电容 Crss 典型
26 pF
总栅极电荷 Qg 典型
140 nC

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在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMJ60R040CFY

600V Super Junction MOSFET

Product Summary
VDS RDS(ON), max ID, max
600 V 40 mΩ @ VGS = 10V 83 A

TO247-3L

Features
  • Low On-Resistance
  • Excellent FoM (figure of merit)
  • Ultra fast body diode
  • 100% UIS and Rg tested
  • RoHS compliant, HALOGEN FREE
Applications
  • Motor Drive
  • Li- Battery Protection
  • Power Management for High Performance Application
Mechanical Data
  • Green Molding Compound
  • Moisture Sensitivity: Level 1 per J-STD-020
  • UL Flammability Classification Rating 94V-0
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMJ60R040CFY TO247-3L 60R040CF Tube 30
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS 600 V
Gate - Source Voltage VGS ±20 V
Continuous Drain Current (VGS = 10V) (1) ID TA = 25°C: 83 A
TA = 100°C: 53 A
Pulsed Drain Current (2) IDM 242 A
Single Pulse Avalanche Energy (3) EAS 1600 mJ
Single Pulse Avalanche Current (L = 10mH) IAS — A
Power Dissipation PD TA = 25°C: 481 W
TA = 100°C: 192 W
Junction & Storage Temperature Range TJ, TSTG -55 ~ +150 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 28 35 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC 0.22 0.26 °C/W

Static Characteristics (@ TJ = 25°C, unless otherwise specified.)

Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 1mA 600 — — V
Zero Gate Voltage Drain Current IDSS VDS = 600V, VGS = 0V — — 10.0 µA
Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V — — ±100 nA
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 1mA 2.6 3.7 5.6 V
Static Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 25A — 33.5 40 mΩ
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 1.2 — Ω

Dynamic Characteristics (7)

Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance Ciss VDS = 400V, VGS = 0V, f = 250kHz — 4001 — pF
Output Capacitance Coss — 89 — pF
Reverse Transfer Capacitance Crss — 26 — pF
Effective Output Capacitance, Energy Related (8) Co(er) VGS = 0V, VDS = 0...400V — 168 — pF
Effective Output Capacitance, Time Related (9) Co(tr) VDS = 0...400V — 1450 — pF

Switching Characteristics (7)

Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time td(on) VGS = 10V, VDS = 400V — 41 — ns
Rise Time tr ID = 15.6A, RGEN = 3.6Ω — 10 — ns
Turn-Off Delay Time td(off) — 34 — ns
Fall Time tf — 11 — ns

Gate Charge Characteristics (7)

Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge Qg VDS = 400V, ID = 15.6A — 140 — nC
Gate-Source Charge Qgs — 23 — nC
Gate-Drain Charge Qgd VGS = 0 to 10V — 75 — nC
Gate Plateau Voltage Vplateau — 5.9 — V

Reverse Diode Characteristics (7)

Parameter Symbol Test Condition Min Typ Max Unit
Diodes Forward Voltage VSD IF = 25A, VGS = 0V — 0.96 1.5 V
Body Diode Reverse Recovery Time trr IS = 15.6A, di/dt = 100A/µs, VDS = 400V — 137 — ns
Body Diode Reverse Recovery Charge Qrr — 6.62 — µC
Diode Forward Current IRM — 10 — A
Diode dv/dt dv/dt VR = 400V, IF = 30A, di/dt = 200A/µs — 124 — V/µs

Notes:

  1. This current is chip limited, which is calculated based on RθJC.
  2. This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
  3. Single Pulse Avalanche Energy (L = 10mH).
  4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  5. Thermal resistance from junction to soldering point (on the exposed drain pad).
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design; not subject to production.
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