SineSemi has released SMT12T02AHPWQ, a 120V N-channel SGT MOSFET in a PDFN5060-8L-W package, targeting high-power-density supplies.
The part offers a typical on-resistance as low as 2.5 mΩ at VGS=10V. At TC=25°C it supports a continuous drain current of up to 166 A with a maximum power dissipation of 176 W, and a typical gate charge (Qg) of about 63 nC — a balance struck between conduction loss and switching behavior. The package uses a Wettable Flank process, supports AOI inspection, and is an automotive-grade design validated for reliability.
SMT12T02AHPWQ in a PDFN5060-8L-W package. Image: SineSemi
The part has completed reference-customer validation and entered volume production, with target applications spanning AI server power, automotive, telecom and industrial power in high-power-density designs. Parts in this series can be compared on-site by filtering at the 120V voltage class; samples are arranged via a part-number inquiry.
Source: SineSemi Product News · www.sinesemi.com/cpxw/4245.html