Addressing the efficiency and power-density demands of AI server and data-center supplies, SineSemi has released SMT8001AHP, an 80V SGT MOSFET.
The device uses a long-lead layout to reach a typical on-resistance as low as 1.2 mΩ within a compact PDFN5060 package, with structural optimization that lowers parasitic capacitance and gate charge to improve dynamic response and drive efficiency at high switching frequencies. SineSemi also offers a dual-side-cooled variant, SMT8001AHPDC3, which keeps the static and dynamic performance while strengthening thermal management for higher output in tighter spaces.
SMT8001AHP series packages. Image: SineSemi
On the application side, the series targets LLC resonant and synchronous-rectification topologies and data-center DC-DC power modules, with a smaller DFN3333 package planned for compact power-brick designs. Both SMT8001AHP and SMT8001AHPDC3 are open for sample requests — reach our engineers via a part-number inquiry.
Source: SineSemi Product News · www.sinesemi.com/cpxw/4236.html