To meet drone propulsion demands for high power density, low loss and fast switching, SineSemi has introduced a 30–150V MOSFET portfolio for the application.
The portfolio deeply optimizes on-resistance while keeping gate charge (Qg) low: at VGS=10V, RDS(ON) ranges about 0.43–3.4 mΩ with an FOM of roughly 48–330, letting designers match parts to different power tiers. SineSemi also introduces a new dual-side-cooled package that ties the top of the package to a heatsink over a more direct path — about three times the cooling capability of a bottom-side-cooled approach, with current handling rising accordingly.
Dual-side-cooled package (top metal cooling face). Image: SineSemi
Within the series, the 100V PDFN5060-8L dual-side-cooled part comes in below 2.0 mΩ RDS(ON). Gate RC-tuning and burn-in test data show solid switching-ring suppression and temperature-rise control, with a measured case temperature of about 41.3°C.
Switching waveforms and infrared temperature test data (case temperature about 41.3°C). Image: SineSemi
Drone-propulsion selection maps power tiers onto this portfolio; for full-size curves or samples, submit a part-number inquiry.
Source: SineSemi Product News · www.sinesemi.com/cpxw/3732.html