On 10 April 2025 the OFweek 2025 (14th) China Robot Industry Conference — hosted by the high-tech industry portal OFweek and organized by OFweek Robotics — took place in Shenzhen. SineSemi's self-developed dual-side-cooled, ultra-low-resistance SGT MOSFET SMT10T02AHPDCQ (100 V / 2.0 mΩ / 209 A) was chosen from more than a hundred participating companies for the Weike Cup · OFweek 2024 China Robot Industry Core Component Innovation Product Award, which recognizes the part's breakthrough and efficiency as a domestic device in robot motor applications.
The award ceremony screen with the winning part SMT10T02AHPDCQ. Image: SineSemi
SMT10T02AHPDCQ is a 100 V high-performance MOSFET designed for embodied-robot applications and positioned as a core power device in robot joint drive systems. It ships in the PDFN5060-8L-DC dual-side-cooled package: the top of the package mounts directly against a heatsink, giving three times the heat-dissipation capability of a bottom-cooled MOSFET and a correspondingly higher current-carrying capability, which supports precise and stable robot operation in complex environments.
Device-level highlights:
- 2.0 mΩ on-resistance, with conduction loss 46% lower than comparable competitor parts;
- 175°C junction-temperature design for stable operation in harsh environments;
- a Crss/Ciss ratio of 1.04%, suppressing VGS oscillation and preventing false turn-on of the high-side/low-side pair;
- moderately increased Coss to trim voltage spikes and improve EMI;
- 100% avalanche-current tested, wide SOA, strong surge tolerance;
- gate charge Qg of only 70 nC for low switching loss;
- low Qrr, reducing voltage ringing, overshoot and noise;
- the low RDS(ON)–Qg combination (FOM) helps system efficiency and battery run time, and fewer MOSFETs in parallel raise power density and cut system cost.
Key features of the PDFN5060-8L-DC dual-side-cooled package. Image: SineSemi
The PDFN5060-8L-DC package uses a thick copper clip for low parasitic inductance and low package resistance. It is compatible with standard PDFN5060 and LFPAK5060 packages, with longer leads for better solderability and AOI inspection; the top-side cooling area lowers RthJC and RthJA, and the maximum junction temperature is 175°C.
Backed by strategic investment from the power wafer fab United Nova Technology (UNT) and the engineering background of a core team drawn from European and US power-semiconductor majors, SineSemi is pursuing vertical technology integration together with full-supply-chain integration; SMT10T02AHPDCQ is where that path lands in robot joint drives.
Source: SineSemi Company News · www.sinesemi.com/gsxw/3749.html