SMT4004AHPHQ and SMT4004ALPHQ are SineSemi's two 40V automotive-grade MOSFETs in a PDFN5060 half-bridge package. Both are compatible with the equivalent automotive packages from European and U.S. suppliers, serve as a domestic alternative and have won recognition from benchmark customers. They are AEC-Q101 qualified with PPAP documentation available, the maximum junction temperature is 175°C and current handling reaches about 80 A. Target applications are body-control functions: powered tailgates, seat adjustment, window lift and windshield wipers.
Manufacturer banner for the automotive half-bridge MOSFETs. Image: SineSemi
The package is PDFN5060-8L-HW: the two dies are wired as a bridge inside the package with a shared S1/D2 pin, which simplifies PCB layout, and the lower parasitic inductance translates into lower power loss and higher power density. Both parts are avalanche rated, with EAS up to 130 mJ and 116 mJ respectively. A copper-clip bridge construction improves electrical and thermal conduction — SMT4004AHPHQ has a typical on-resistance of 3.6 mΩ at VGS = 10 V — and helps EMI, while wettable flanks make post-reflow AOI inspection easier and raise board-level reliability. Key parameters of the two parts:
| Part | VDS | ID max | VGS(th) typ | RDS(ON) typ / max (VGS = 10 V) | EAS max | Coss typ | Qg typ |
|---|---|---|---|---|---|---|---|
| SMT4004AHPHQ | 40 V | 79 A | 3.0 V | 3.6 mΩ / 4.4 mΩ | 130 mJ | 488 pF | 13.4 nC |
| SMT4004ALPHQ | 40 V | 81 A | 1.7 V | 3.5 mΩ / 4.2 mΩ | 116 mJ | 601 pF | 13.8 nC |
(Figures as published at the time; see the product page for current values.)
On the design side, the devices build in a voltage-rating margin and work with standard gate drive to prevent false turn-on, and the die protection layers are matched with a safety margin. The package trims the source and drain parasitic inductances Ls and Ld to cut the L·di/dt voltage spike at turn-off, and Coss is moderately enlarged to work alongside an enhanced RC snubber.
Application case 1 is an automotive water pump: a three-phase brushless-motor drive built from SMT4004AHPHQ devices, with an RC snubber across each switch position, a 12 V battery bus and a reverse-battery protection MOSFET at the input. Test waveforms show no ringing on either VDS or VGS. RC snubber design rules: Cs = (2–3) × Coss, where Coss is the MOSFET output capacitance listed in the datasheet; Rs = 1.5 × √(Lstray / Cs), where Lstray is the loop parasitic inductance.
Application case 1: water-pump drive schematic and board (SMT4004AHPHQ). Image: SineSemi
Application case 2 is a low-power supply in which SMT4004AHPHQ devices form a full bridge whose transformer-isolated dual outputs drive LED loads.
As of the announcement, SMT4004AHPHQ and SMT4004ALPHQ were both in volume production with samples available, joining the automotive-grade products SineSemi has already brought to market.
Source: SineSemi Product News · www.sinesemi.com/cpxw/3735.html