SMT8502AHAF 产品图

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SMT8502AHAF

中晶新源 SineSemi核心代理商

晶圆/裸片Wafer

参数规格

工艺
SGT
结构
N
漏源电压 VDS
85 V
导通电阻 RDS(ON)@10V 最大
2.5 mΩ
导通电阻 RDS(ON)@10V 典型
2.1 mΩ
阈值电压 VGS(th) 典型
3 V
With ESD
No
Die Size (μm×μm)
4680*4060
Gross Die (8" wafer)
1426
Wafer Thickness (μm)
200±20
栅源电压 VGS 最大
±20 V
输入电容 Ciss 典型
7223 pF
输出电容 Coss 典型
1443 pF
反向传输电容 Crss 典型
44 pF
总栅极电荷 Qg 典型
100 nC
Qgs_Typ
32 nC
Qgd_Typ
22 nC
结温 Tj
150 °C
原厂备注
FAB 2 SGT

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在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMT8502AHAF

85V N-Channel Power MOSFET

Product Summary
  • VDS = 85V
  • RDS(ON), max = 1.5mΩ (VGS = 10V)
Potential Applications
  • Power Management
  • Motor Driving and BMS in Power Tools, E-vehicle
  • High frequency switching, synchronous rectification
Chip Information
Parameter Value
Die Size (with scribe line) 4680µm × 4060µm
Gate Pad Size 280µm × 432µm
Source Pad Size Full Metalized Source
Scribe Line Width 80µm
Wafer Thickness 200µm ± 20µm
Wafer Diameter 8 inch
Passivation Yes
Front Metal Composition & Thickness AlCu, 4µm
Back Metal Composition & Thickness Ti/Ni/Ag, 1.4µm
Gross Die (approximately) 1,446
Recommended Package TOLL
Maximum Ratings (@ TJ = 25°C, unless otherwise specified.)
Parameter Symbol Value Units
Drain - Source Voltage VDS 85 V
Gate - Source Voltage VGS ±20 V
Junction Temperature Range TJ -55 ~ +175 °C
Ordering Information
Orderable Part Number Wafer Description
SMT8502AHAF Sampling Tested Wafer
SMT8502AHAF-C Full CP Tested Wafer

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Parameter Symbol Test Conditions Min Typ Max Units
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 85 — — V
Zero Gate Voltage Drain Current IDSS VDS = 85V, VGS = 0V — — 1.0 µA
Gate-Body Leakage Current IGSS VGS = ±20V, VDS = 0V — — ±100 nA
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA 2.0 3.0 4.0 V
Static Drain-Source On-Resistance (1) RDS(on) VGS = 10V, ID = 20A — 1.5 1.8 mΩ
Diodes Forward Voltage VSD IS = 2.0A, VGS = 0V — 0.7 1.2 V
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Input Capacitance Ciss — 5289 — pF
Output Capacitance Coss VDS = 40V, VGS = 0V, f = 1MHz — 1381 — pF
Reverse Transfer Capacitance Crss — 36 — pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 1.4 — Ω
Gate Charge Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Total Gate Charge Qg — 100 — nC
Gate-Source Charge Qgs VDS = 40V, ID = 20A — 32 — nC
Gate-Drain Charge Qgd VGS = 10V — 22 — nC
Gate Plateau Voltage Vplateau — 4.9 — V
Drain-Source Diode Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Body Diode Reverse Recovery Time trr IS = 20A, di/dt = 100A/µs — 68 — ns
Body Diode Reverse Recovery Charge Qrr TJ = 25°C — 111 — nC

Notes:

  1. RDS(on) value is referred by the device assembled in TOLL.
SMT8501AHAF导通电阻 RDS(ON)@10V 最大1.7 mΩ输入电容 Ciss 典型7461 pFSMT8001BHPD导通电阻 RDS(ON)@10V 最大1.6 mΩ输入电容 Ciss 典型7985 pFSMT10T03EHAF2导通电阻 RDS(ON)@10V 最大2.9 mΩ输入电容 Ciss 典型5444 pFSMT10T02CHAF导通电阻 RDS(ON)@10V 最大2 mΩ输入电容 Ciss 典型8129 pFSMT10T01CHAF2导通电阻 RDS(ON)@10V 最大1.9 mΩ输入电容 Ciss 典型6889 pFSMT10T03EHAF导通电阻 RDS(ON)@10V 最大3.3 mΩ输入电容 Ciss 典型4799 pF