产品详情
SMV20N50AHT
中晶新源 SineSemi核心代理商
高压 MOSFET
参数规格
- 结温 Tj
- 150 °C
- 漏源电压 VDS
- 500 V
- 漏极电流 ID
- 20 A
- 导通电阻 RDS(ON)@10V 典型
- 240 mΩ
- 导通电阻 RDS(ON)@10V 最大
- 300 mΩ
- 栅源电压 VGS 最大
- ±30 V
- 雪崩能量 EAS 最大
- 1500 mJ
- 输入电容 Ciss 典型
- 2670 pF
- 输出电容 Coss 典型
- 260 pF
- 反向传输电容 Crss 典型
- 35 pF
- 总栅极电荷 Qg 典型
- 65 nC
在线规格书
以下内容整理自原厂规格书，实际参数以原厂正式文件为准。
SMV20N50AHS / SMV20N50AHF
500V N-Channel MOSFET
Lead Free Package and Finish
General Features
- Proprietary New Planar Technology
- R_DS(on), typ =0.24 Ω@V_GS=10V
- Low Gate Charge Minimize Switching Loss
- Fast Recovery Body Diode
| BV_DSS |
R_DS(ON), typ |
I_D |
| 500V |
0.24Ω |
20A |
Applications
- Adaptor Charger
- SMPS Power Supply
- LCD Panel Power
Ordering Information
| Part Number |
Package |
| SMV20N50AHS |
TO-220 |
| SMV20N50AHF |
TO-220F |
Absolute Maximum Ratings (@ T_C = 25°C, unless otherwise specified.)
| Symbol |
Parameter |
SMV20N50AHS |
SMV20N50AHF |
Unit |
| V_DSS |
Drain-to-Source Voltage ^(1) |
500 |
500 |
V |
| V_GSS |
Gate-to-Source Voltage |
±30 |
±30 |
V |
| I_D |
Continuous Drain Current |
20 |
20 |
A |
| E_AS |
Single Pulse Avalanche Energy |
1500 |
1500 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt ^(3) |
5.0 |
5.0 |
V/ns |
| P_D |
Power Dissipation |
175 |
60 |
W |
|
Derating Factor above 25°C |
1.40 |
0.48 |
W/°C |
| T_J & T_STG |
Operating and Storage Temperature Range |
-55 to 150 |
-55 to 150 |
°C |
Thermal Characteristics
| Symbol |
Parameter |
PTP20N50A |
PTA20N50A |
Unit |
| R_θJC |
Thermal Resistance, Junction-to-Case |
0.71 |
2.08 |
°C/W |
| R_θJA |
Thermal Resistance, Junction-to-Ambient |
62 |
100 |
°C/W |
Electrical Characteristics
OFF Characteristics (T_J = 25°C, unless otherwise specified.)
| Symbol |
Parameter |
Min |
Typ |
Max |
Unit |
Test Conditions |
| BV_DSS |
Drain-to-Source Breakdown Voltage |
500 |
— |
— |
V |
V_GS=0V, I_D=250uA |
| I_DSS |
Drain-to-Source Leakage Current |
— |
— |
1 |
µA |
V_DS=500V, V_GS=0V |
|
|
— |
— |
100 |
µA |
V_DS=400V, V_GS=6V, T_J=125°C |
| I_GSS |
Gate-to-Source Leakage Current |
— |
— |
+100 |
nA |
V_GS=+30V, V_DS=0V |
|
|
— |
— |
-100 |
nA |
V_GS=-30V, V_DS=0V |
ON Characteristics (T_J = 25°C, unless otherwise specified.)
| Symbol |
Parameter |
Min |
Typ |
Max |
Unit |
Test Conditions |
| R_DS(on) |
Static Drain-to-Source On-Resistance |
— |
0.24 |
0.3 |
Ω |
V_GS=10V, I_D=10A |
| V_GS(th) |
Gate Threshold Voltage |
2.0 |
— |
4.0 |
V |
V_DS=V_GS, I_D=250uA |
| g_fs |
Forward Transconductance ^(6) |
— |
18 |
— |
S |
VDS=15V, ID=10A |
Dynamic Characteristics (Essentially independent of operating temperature)
| Symbol |
Parameter |
Min |
Typ |
Max |
Unit |
Test Conditions |
| C_iss |
Input Capacitance |
— |
2670 |
— |
pF |
V_GS=0V, V_DS=25V, f=1.0MHz |
| C_rss |
Reverse Transfer Capacitance |
— |
35 |
— |
pF |
|
| C_oss |
Output Capacitance |
— |
260 |
— |
pF |
|
| Q_g |
Total Gate Charge |
— |
65 |
— |
nC |
V_DS=250V, I_D=20A, V_GS=0 to 10V |
| Q_gs |
Gate-to-Source Charge |
— |
14 |
— |
nC |
|
| Q_gd |
Gate-to-Drain (Miller) Charge |
— |
24 |
— |
nC |
|
Resistive Switching Characteristics (Essentially independent of operating temperature)
| Symbol |
Parameter |
Min |
Typ |
Max |
Unit |
Test Conditions |
| t_d(ON) |
Turn-on Delay Time |
— |
35 |
— |
ns |
V_DD=250V, I_D=20A, V_GS= 10V, R_G=25 Ω |
| t_RR |
Rise Time |
— |
75 |
— |
ns |
|
| t_d(OFF) |
Turn-Off Delay Time |
— |
165 |
— |
ns |
|
| t_fall |
Fall Time |
— |
85 |
— |
ns |
|
Source-Drain Body Diode Characteristics (T_J = 25°C, unless otherwise specified.)
| Symbol |
Parameter |
Min |
Typ |
Max |
Unit |
Test Conditions |
| I_SD |
Continuous Source Current ^(1) |
— |
— |
20 |
A |
Integral PN-diode in MOSFET |
| I_SM |
Pulsed Source Current ^(4) |
— |
— |
80 |
A |
|
| V_SD |
Diode Forward Voltage |
— |
— |
1.5 |
V |
I_SD=20A, V_GS=0V |
| trr |
Reverse recovery time |
— |
320 |
— |
ns |
V_GS=0V, I_rr=20A, di/dt=100A/µs |
| Qrr |
Reverse recovery charge |
— |
3.0 |
— |
µC |
|
Notes:
- T_J=+25°C to +150°C.
- Repetitive rating, pulse width limited by maximum junction temperature.
- I_SD= 20A, di/dt < 100 A/µs, VDD < BV(dss), T_J=+150°C.
- Pulse width≤380µs, duty cycle≤2%.
