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SMV07N50AFU

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高压 MOSFETTO252-3L

参数规格

封装
TO252-3L
结温 Tj
150 °C
漏源电压 VDS
500 V
漏极电流 ID
7 A
导通电阻 RDS(ON)@10V 典型
1100 mΩ
导通电阻 RDS(ON)@10V 最大
1300 mΩ
栅源电压 VGS 最大
±30 V
雪崩能量 EAS 最大
220 mJ
输入电容 Ciss 典型
888 pF
输出电容 Coss 典型
70 pF
反向传输电容 Crss 典型
3.4 pF
总栅极电荷 Qg 典型
16 nC

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在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMV07N50AFU

500V N-ch Planar MOSFET with FRD Design

Product Summary
VDS RDS(ON), max ID, max
500 V 1.3 Ω @ VGS = 10V 7 A

TO252-3L

Features
  • RoHS Compliant
  • Low Gate Charge Minimize Switching Loss
  • Fast Recovery Body Diode
Applications
  • Adaptor
  • Charger
  • SMPS Standby Power
Mechanical Data
  • Green Molding Compound
  • Moisture Sensitivity: Level 3 per J-STD-020
  • UL Flammability Classification Rating 94V-0
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMV07N50AFU TO252-3L 07N50AF 13" Tape&Reel 2,500
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
Parameter Symbol Value Units
Drain - Source Voltage VDS 500 V
Gate - Source Voltage VGS ±30 V
Continuous Drain Current (VGS = 10V) (1) ID @ TA = 25°C 7 A
ID @ TC = 100°C 4.9 A
Pulsed Drain Current (2) IDM 28 A
Single Pulse Avalanche Energy (3) EAS 220 mJ
Power Dissipation PD @ TA = 25°C 78 W
MOSFET dv/dt Ruggedness, VDD=0...520V dv/dt 50 V/ns
Reverse Diodes dv/dt, VDD=0...490V, IDS=IS dv/dt 50 V/ns
Soldering Temperature TS 300 °C
Distance of 1.6mm from case for 10 seconds
Junction & Storage Temperature Range TJ, TSTG -55 ~ +150 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA — 65 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC — 1.6 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics (6)
Parameter Symbol Test Condition Min Typ Max Units
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 500 — — V
VDS = 500V, VGS = 0V, 25°C — — 1.0 µA
Zero Gate Voltage Drain Current IDSS VDS = 400V, VGS = 0V, 125°C — — 100 µA
Gate-Source Leakage Current IGSS VGS = ±30V, VGS = ±12V — — ±100 nA
On Characteristics (6)
Parameter Symbol Test Condition Min Typ Max Units
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA 2.5 — 4.5 V
Static Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 3.5A — 1.1 1.3 Ω
Diodes Forward Voltage VSD IS = 7.0A, VGS = 0V — — 1.4 V
Dynamic Characteristics (8)
Parameter Symbol Test Condition Min Typ Max Units
Input Capacitance Ciss — 888 — pF
Output Capacitance Coss VDS = 25V, VGS = 0V, f = 1.0MHz — 70 — pF
Reverse Transfer Capacitance Crss — 3.4 — pF
Gate Resistance Rg f = 1.0MHz — 12 — Ω
Switching Characteristics (6)
Parameter Symbol Test Condition Min Typ Max Units
Turn-On Delay Time td(on) — 20 — ns
Rise Time tr VDS = 10V, VDS = 250V — 29 — ns
Turn-Off Delay Time td(off) ID = 7.0A, Rg=25Ω — 28 — ns
Fall Time tf — 33 — ns
Gate Charge Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Units
Total Gate Charge (VGS = 10V) Qg — 16 — nC
Gate-Source Charge Qgs VDS = 400V, ID = 7.5A — 4.7 — nC
Gate-Drain Charge Qgd VGS = 6...10V — 5.7 — nC
Drain-Source Diode Characteristics (6)
Parameter Symbol Test Condition Min Typ Max Units
Body Diode Recovery Time trr IF = 4.0A, di/dt = 100A/ns — 90 — ns
Body Diode Reverse Recovery Charge Qrr VR = 400V — 195 — nC
Diode Forward Current IS TJ = 25°C — — 7.0 A

Notes:

  1. This current is chip limited, which is calculated based on Rθjc.
  2. This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
  3. Defined by design; not subject to production test. EAS condition: TJ=25°C, VDD=100V, VGS=10V, Rg=25Ω, L=10mH.
  4. Device mounted on FR4 substrate PC board with 2oz copper on 1inch square cooling area.
  5. Thermal resistance from junction to soldering point (on the exposed drain pad).
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design, not subject to production.
  8. Coss is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 480V.
  9. Coss is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 480V.
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