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SMV10N50AHS

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高压 MOSFETTO-220

参数规格

封装
TO-220
结温 Tj
150 °C
漏源电压 VDS
500 V
漏极电流 ID
10 A
导通电阻 RDS(ON)@10V 典型
550 mΩ
导通电阻 RDS(ON)@10V 最大
750 mΩ
栅源电压 VGS 最大
±30 V
雪崩能量 EAS 最大
710 mJ
输入电容 Ciss 典型
1253 pF
输出电容 Coss 典型
130 pF
反向传输电容 Crss 典型
18 pF
总栅极电荷 Qg 典型
32 nC

不确定怎么选？阅读《高压 MOSFET 选型指南》 →

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMV10N50AHS / SMV10N50AHF

500V N-Channel MOSFET

General Features
  • Proprietary New Planar Technology
  • RDS(on) =0.55 Ω@VGS=10V
  • Low Gate Charge Minimize Switching Loss
  • Fast Recovery Body Diode
BV_DSS RDS(ON), typ ID
500V 0.55Ω 10A
Applications
  • Adaptor Charger
  • SMPS Power Supply
  • LCD Panel Power
Ordering Information
Part Number Package Brand
SMV10N50AHS TO-220
SMV10N50AHF TO-220F
Absolute Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
Symbol Parameter SMV10N50AHS SMV10N50AHF Unit
VDSS Drain-to-Source Voltage (1) 500 500 V
VGSS Gate-to-Source Voltage ±30 ±30 V
ID Continuous Drain Current 10 10 A
IDM Pulsed Drain Current at VGS=10V (4) 40 40 A
EAS Single Pulse Avalanche Energy 710 710 mJ
dv/dt Peak Diode Recovery dv/dt (3) 5.0 5.0 V/ns
PD Power Dissipation 140 50 W
Derating Factor above 25°C 1.12 0.40 W/°C
TL, TMAX Maximum Temperature for Soldering 300 300 °C
Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds 260 260
TJ & TSTG Operating and Storage Temperature Range -55 to 150 -55 to 150 °C
Thermal Characteristics
Symbol Parameter SMV10N50AHS SMV10N50AHF Unit
R_θJC Thermal Resistance, Junction-to-Case 0.89 2.5 °C/W
R_θJA Thermal Resistance, Junction-to-Ambient 62 100 °C/W

Electrical Characteristics

OFF Characteristics (TJ = 25°C, unless otherwise specified.)
Symbol Parameter Min Typ Max Unit Test Conditions
BV_DSS Drain-to-Source Breakdown Voltage 500 — — V VGS=0V, ID=250uA
IDSS Drain-to-Source Leakage Current — — 1 µA VDS=500V, VGS=0V
— — 100 µA VDS=400V, VGS=0V, TJ=125°C
IGSS Gate-to-Source Leakage Current — — ±100 nA VGS=±30V, VDS=0V
— — -100 nA VGS=-30V, VDS=0V
ON Characteristics (TJ = 25°C, unless otherwise specified.)
Symbol Parameter Min Typ Max Unit Test Conditions
RDS(on) Static Drain-to-Source On-Resistance — 0.55 0.75 Ω VGS=10V, ID=5A
VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS=VGS, ID=250uA
gfs Forward Transconductance (6) — 11 — S VDS=20V,ID=10A
Dynamic Characteristics (Essentially independent of operating temperature)
Symbol Parameter Min Typ Max Unit Test Conditions
Ciss Input Capacitance — 1253 — pF VGS=0V, VDS=25V, f=1.0MHz
Crss Reverse Transfer Capacitance — 18 — pF
Coss Output Capacitance — 130 — pF
Qg Total Gate Charge — 32 — nC VDS=250V, ID=10A, VGS=0 to 10V
Qgs Gate-to-Source Charge — 7.8 — nC
Qgd Gate-to-Drain (Miller) Charge — 12 — nC
Resistive Switching Characteristics (Essentially independent of operating temperature)
Symbol Parameter Min Typ Max Unit Test Conditions
td(ON) Turn-on Delay Time — 21 — ns VDD=250V, ID=10A, VGS= 10V, RG=25 Ω
tRR Rise Time — 33 — ns
td(OFF) Turn-Off Delay Time — 80 — ns
tfall Fall Time — 38 — ns
Source-Drain Body Diode Characteristics (TJ = 25°C, unless otherwise specified.)
Symbol Parameter Min Typ Max Unit Test Conditions
ISD Continuous Source Current (1) — — 10 A Integral PN-diode in MOSFET
ISM Pulsed Source Current (4) — — 40 A
VSD Diode Forward Voltage — — 1.5 V ISD=10A, VGS=0V
trr Reverse recovery time — 340 — ns VGS=0V, Irr=10A, di/dt=100A/µs
Qrr Reverse recovery charge — 1.6 — µC

Notes:

  1. TJ=+25°C to +150°C.
  2. Repetitive rating, pulse width limited by maximum junction temperature.
  3. ISD= 9A di/dt < 100 A/µs, VDD < 80 V(sd), TJ=+150°C.
  4. Pulse width≤80µs, duty cycle≤2%.
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