Product Detail

SMV10N50AHS

SineSemi 中晶新源Core Authorized Distributor

HV MOSFETsTO-220

Specifications

Package: TO-220
Tj: 150 °C
VDS_Max: 500 V
ID_Max: 10 A
RDS(ON)_Typ @VGS=10V: 550 mΩ
RDS(ON)_Max @VGS=10V: 750 mΩ
VGS_Max: ±30 V
EAS_Max: 710 mJ
Ciss_Typ: 1253 pF
Coss_Typ: 130 pF
Crss_Typ: 18 pF
Qg_Typ: 32 nC

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Online Datasheet

Compiled from the manufacturer's datasheet; the official document prevails.

SMV10N50AHS / SMV10N50AHF

500V N-Channel MOSFET

General Features

Proprietary New Planar Technology
R_DS(on) =0.55 Ω@V_GS=10V
Low Gate Charge Minimize Switching Loss
Fast Recovery Body Diode

BV_DSS	R_DS(ON), typ	I_D
500V	0.55Ω	10A

Applications

Adaptor Charger
SMPS Power Supply
LCD Panel Power

Ordering Information

Part Number	Package	Brand
SMV10N50AHS	TO-220
SMV10N50AHF	TO-220F

Absolute Maximum Ratings (@ T_C = 25°C, unless otherwise specified.)

Symbol	Parameter	SMV10N50AHS	SMV10N50AHF	Unit
V_DSS	Drain-to-Source Voltage ⁽¹⁾	500	500	V
V_GSS	Gate-to-Source Voltage	±30	±30	V
I_D	Continuous Drain Current	10	10	A
I_DM	Pulsed Drain Current at V_GS=10V ⁽⁴⁾	40	40	A
E_AS	Single Pulse Avalanche Energy	710	710	mJ
dv/dt	Peak Diode Recovery dv/dt ⁽³⁾	5.0	5.0	V/ns
P_D	Power Dissipation	140	50	W
	Derating Factor above 25°C	1.12	0.40	W/°C
T_L, T_MAX	Maximum Temperature for Soldering	300	300	°C
	Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds	260	260
T_J & T_STG	Operating and Storage Temperature Range	-55 to 150	-55 to 150	°C

Thermal Characteristics

Symbol	Parameter	SMV10N50AHS	SMV10N50AHF	Unit
R_θJC	Thermal Resistance, Junction-to-Case	0.89	2.5	°C/W
R_θJA	Thermal Resistance, Junction-to-Ambient	62	100	°C/W

Electrical Characteristics

OFF Characteristics (T_J = 25°C, unless otherwise specified.)

Symbol	Parameter	Min	Typ	Max	Unit	Test Conditions
BV_DSS	Drain-to-Source Breakdown Voltage	500	—	—	V	V_GS=0V, I_D=250uA
I_DSS	Drain-to-Source Leakage Current	—	—	1	µA	V_DS=500V, V_GS=0V
		—	—	100	µA	V_DS=400V, V_GS=0V, T_J=125°C
I_GSS	Gate-to-Source Leakage Current	—	—	±100	nA	V_GS=±30V, V_DS=0V
		—	—	-100	nA	V_GS=-30V, V_DS=0V

ON Characteristics (T_J = 25°C, unless otherwise specified.)

Symbol	Parameter	Min	Typ	Max	Unit	Test Conditions
R_DS(on)	Static Drain-to-Source On-Resistance	—	0.55	0.75	Ω	V_GS=10V, I_D=5A
V_GS(th)	Gate Threshold Voltage	2.0	—	4.0	V	V_DS=V_GS, I_D=250uA
g_fs	Forward Transconductance ⁽⁶⁾	—	11	—	S	VDS=20V,ID=10A

Dynamic Characteristics (Essentially independent of operating temperature)

Symbol	Parameter	Min	Typ	Max	Unit	Test Conditions
C_iss	Input Capacitance	—	1253	—	pF	V_GS=0V, V_DS=25V, f=1.0MHz
C_rss	Reverse Transfer Capacitance	—	18	—	pF
C_oss	Output Capacitance	—	130	—	pF
Q_g	Total Gate Charge	—	32	—	nC	V_DS=250V, I_D=10A, V_GS=0 to 10V
Q_gs	Gate-to-Source Charge	—	7.8	—	nC
Q_gd	Gate-to-Drain (Miller) Charge	—	12	—	nC

Resistive Switching Characteristics (Essentially independent of operating temperature)

Symbol	Parameter	Min	Typ	Max	Unit	Test Conditions
t_d(ON)	Turn-on Delay Time	—	21	—	ns	V_DD=250V, I_D=10A, V_GS= 10V, R_G=25 Ω
t_RR	Rise Time	—	33	—	ns
t_d(OFF)	Turn-Off Delay Time	—	80	—	ns
t_fall	Fall Time	—	38	—	ns

Source-Drain Body Diode Characteristics (T_J = 25°C, unless otherwise specified.)

Symbol	Parameter	Min	Typ	Max	Unit	Test Conditions
I_SD	Continuous Source Current ⁽¹⁾	—	—	10	A	Integral PN-diode in MOSFET
I_SM	Pulsed Source Current ⁽⁴⁾	—	—	40	A
V_SD	Diode Forward Voltage	—	—	1.5	V	I_SD=10A, V_GS=0V
trr	Reverse recovery time	—	340	—	ns	V_GS=0V, I_rr=10A, di/dt=100A/µs
Qrr	Reverse recovery charge	—	1.6	—	µC

Notes:

T_J=+25°C to +150°C.
Repetitive rating, pulse width limited by maximum junction temperature.
I_SD= 9A di/dt < 100 A/µs, VDD < 80 V(sd), T_J=+150°C.
Pulse width≤80µs, duty cycle≤2%.