产品详情
SMV10N50AHT
中晶新源 SineSemi核心代理商
高压 MOSFET
参数规格
- 结温 Tj
- 150 °C
- 漏源电压 VDS
- 500 V
- 漏极电流 ID
- 10 A
- 导通电阻 RDS(ON)@10V 典型
- 550 mΩ
- 导通电阻 RDS(ON)@10V 最大
- 750 mΩ
- 雪崩能量 EAS 最大
- 710 mJ
- 输入电容 Ciss 典型
- 1253 pF
- 输出电容 Coss 典型
- 130 pF
- 反向传输电容 Crss 典型
- 18 pF
- 总栅极电荷 Qg 典型
- 32 nC
不确定怎么选？阅读《高压 MOSFET 选型指南》 →
在线规格书
以下内容整理自原厂规格书，实际参数以原厂正式文件为准。
SMV10N50AHT
500V N-Channel MOSFET
Lead Free Package and Finish
General Features
- Proprietary New Planar Technology
- RDS(on) =0.55 Ω@VGS=10V
- Low Gate Charge Minimize Switching Loss
- Fast Recovery Body Diode
| BV_DSS |
RDS(ON), typ |
ID |
| 500V |
0.55Ω |
10A |
Applications
- Adaptor Charger
- SMPS Power Supply
- LCD Panel Power
Absolute Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
| Symbol |
Parameter |
Value |
Unit |
| VDSS |
Drain-to-Source Voltage (1) |
500 |
V |
| VGSS |
Gate-to-Source Voltage |
±30 |
V |
| ID |
Continuous Drain Current |
10 |
A |
| IDM |
Pulsed Drain Current at VGS=10V (4) |
40 |
A |
| EAS |
Single Pulse Avalanche Energy |
710 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (3) |
5.0 |
V/ns |
| PD |
Power Dissipation |
140 |
W |
|
Derating Factor above 25°C |
1.12 |
W/°C |
| TJ & TSTG |
Operating and Storage Temperature Range |
-55 to 150 |
°C |
Thermal Characteristics
| Symbol |
Parameter |
Value |
Unit |
| R_θJC |
Thermal Resistance, Junction-to-Case |
0.89 |
°C/W |
| R_θJA |
Thermal Resistance, Junction-to-Ambient |
62 |
°C/W |
Electrical Characteristics
OFF Characteristics (TJ = 25°C, unless otherwise specified.)
| Symbol |
Parameter |
Min |
Typ |
Max |
Unit |
Test Conditions |
| BV_DSS |
Drain-to-Source Breakdown Voltage |
500 |
— |
— |
V |
VGS=0V, ID=250uA |
| IDSS |
Drain-to-Source Leakage Current |
— |
— |
1 |
µA |
VDS=500V, VGS=0V |
|
|
— |
— |
100 |
µA |
VDS=400V, VGS=0V, TJ=125°C |
| IGSS |
Gate-to-Source Leakage Current |
— |
— |
+100 |
nA |
VGS=+30V, VDS=0V |
|
|
— |
— |
-100 |
nA |
VGS=-30V, VDS=0V |
ON Characteristics (TJ = 25°C, unless otherwise specified.)
| Symbol |
Parameter |
Min |
Typ |
Max |
Unit |
Test Conditions |
| RDS(on) |
Static Drain-to-Source On-Resistance |
— |
0.55 |
0.75 |
Ω |
VGS=10V, ID=5A |
| VGS(th) |
Gate Threshold Voltage |
2.0 |
— |
4.0 |
V |
VDS=VGS, ID=250uA |
| gfs |
Forward Transconductance (6) |
— |
11 |
— |
S |
VDS=20V, ID=10A |
Dynamic Characteristics (Essentially independent of operating temperature)
| Symbol |
Parameter |
Min |
Typ |
Max |
Unit |
Test Conditions |
| Ciss |
Input Capacitance |
— |
1253 |
— |
pF |
VGS=0V, VDS=25V, f=1.0MHz |
| Crss |
Reverse Transfer Capacitance |
— |
18 |
— |
pF |
|
| Coss |
Output Capacitance |
— |
130 |
— |
pF |
|
| Qg |
Total Gate Charge |
— |
32 |
— |
nC |
VDS=250V, ID=10A, VGS=0 to 10V |
| Qgs |
Gate-to-Source Charge |
— |
7.8 |
— |
nC |
|
| Qgd |
Gate-to-Drain (Miller) Charge |
— |
12 |
— |
nC |
|
Resistive Switching Characteristics (Essentially independent of operating temperature)
| Symbol |
Parameter |
Min |
Typ |
Max |
Unit |
Test Conditions |
| td(ON) |
Turn-on Delay Time |
— |
21 |
— |
ns |
VDD=250V, ID=10A, VGS= 10V, RG=25 Ω |
| tRR |
Rise Time |
— |
33 |
— |
ns |
|
| td(OFF) |
Turn-Off Delay Time |
— |
80 |
— |
ns |
|
| tfall |
Fall Time |
— |
38 |
— |
ns |
|
Source-Drain Body Diode Characteristics (TJ = 25°C, unless otherwise specified.)
| Symbol |
Parameter |
Min |
Typ |
Max |
Unit |
Test Conditions |
| ISD |
Continuous Source Current (1) |
— |
— |
10 |
A |
Integral PN-diode in MOSFET |
| ISM |
Pulsed Source Current (4) |
— |
— |
40 |
A |
|
| VSD |
Diode Forward Voltage |
— |
— |
1.5 |
V |
ISD=10A, VGS=0V |
| trr |
Reverse recovery time |
— |
340 |
— |
ns |
VGS=0V, Irr=10A, di/dt=100A/µs |
| Qrr |
Reverse recovery charge |
— |
1.6 |
— |
µC |
|
Notes:
- TJ=+25°C to +150°C.
- Repetitive rating, pulse width limited by maximum junction temperature.
- ISD= 9A di/dt < 100 A/µs, VDD < 80 V(sd), TJ=+150°C.
- Pulse width≤80µs, duty cycle≤2%.
