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SMV13N50AFF

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高压 MOSFETTO220F-3L

参数规格

封装
TO220F-3L
结温 Tj
150 °C
漏源电压 VDS
500 V
漏极电流 ID
13 A
导通电阻 RDS(ON)@10V 典型
400 mΩ
导通电阻 RDS(ON)@10V 最大
500 mΩ
栅源电压 VGS 最大
±30 V
雪崩能量 EAS 最大
562 mJ
输入电容 Ciss 典型
1180 pF
输出电容 Coss 典型
120 pF
反向传输电容 Crss 典型
13 pF
总栅极电荷 Qg 典型
32 nC

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在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMV13N50AFF

500V 13A 0.4Ω N-ch Power MOSFET

Product Summary
VDS RDS(ON), max ID, max
500 V 500 mΩ @ VGS = 10V 13 A

TO220F-3L

Features
  • RDS(ON), typ =0.40 Ω@VGS=10V
  • Low Gate Charge Minimize Switching Loss
  • Fast Recovery Body Diode
Applications
  • ATX Power
  • LCD Panel Power
Mechanical Data
  • Green Molding Compound
  • Moisture Sensitivity: Level 3 per J-STD-020
  • UL Flammability Classification Rating 94V-0
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMV13N50AFF TO220F-3L 13N50AF Tube 50
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
Parameter Symbol Value Units
Drain - Source Voltage VDS 500 V
Gate - Source Voltage VGS ±30 V
Continuous Drain Current (VGS = 10V) (1) ID @ TA = 25°C 13 A
Pulsed Drain Current (2) IDM 49 A
Single Pulse Avalanche Energy (3) EAS 562 mJ
Power Dissipation PD 190 W
Derating Factor above 25°C 1.52 W/°C
Peak Diode Recovery dv/dt dv/dt 5.0 V/ns
Junction & Storage Temperature Range TJ, TSTG -55 ~ +150 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 62 100 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC 0.86 1.92 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics (6)
Parameter Symbol Test Condition Min Typ Max Units
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 500 — — V
VDS = 500V, VGS = 0V — — 1.0 µA
Zero Gate Voltage Drain Current IDSS VDS = 400V, VGS = 0V, TJ = 125°C — — 100 µA
Gate-Source Leakage Current IGSS VGS = ±30V, VDS = 0V — — ±100 nA
On Characteristics (6)
Parameter Symbol Test Condition Min Typ Max Units
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA 2.0 — 4.0 V
Static Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 15A — 400 500 mΩ
Forward Transconductance gfs VDS = 20V, ID = 13A — 20 — S
Diodes Forward Voltage VSD IS = 13A, VGS = 0V — — 1.4 V
Dynamic Characteristics (8)
Parameter Symbol Test Condition Min Typ Max Units
Input Capacitance Ciss — 1180 — pF
Output Capacitance Coss VDS = 25V, VGS = 0V, f = 1MHz — 120 — pF
Reverse Transfer Capacitance Crss — 13 — pF
Switching Characteristics (6)
Parameter Symbol Test Condition Min Typ Max Units
Turn-On Delay Time td(on) — 21 — ns
Rise Time tr VDS = 10V, VGS = 250V — 13 — ns
Turn-Off Delay Time (SMV13N50AFF) td(off) ID = 13A, RGEN = 25Ω — 88 — ns
Fall Time tf — 36 — ns
Gate Charge Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Units
Total Gate Charge (VGS = 6...10V) Qg VDS = 400V, ID = 13A — 32 — nC
Gate-Source Charge Qgs VGS = 0...10V — 7.0 — nC
Gate-Drain Charge Qgd — — — nC
Drain-Source Diode Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Continuous Source Current ISD Integral PN-diode in MOSFET — — 13 A
Pulsed Source Current ISM Pulse width≤300µs, duty cycle≤2% — — 48 A
Body Diode Reverse Recovery Time trr IS = 13A, di/dt = 100A/µs — 310 — ns
Body Diode Reverse Recovery Charge Qrr TJ = 25°C — 4.0 — µC
Diode Forward Current IS TJ = 25°C — — 13 A

Notes:

  1. This current is chip limited, which is calculated based on Rθjc.
  2. This current is calculated on single pulse with 13µs Pulse & Duty Cycle = 1%.
  3. Defined by design, not subject to production test.
  4. Device mounted on FR4 substrate PC board with 2oz copper on 1inch square cooling area.
  5. Thermal resistance from junction to the exposed pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design, not subject to production.
  8. Coss is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 480V.
SMJ60R099BFF导通电阻 RDS(ON)@10V 典型78 mΩ雪崩能量 EAS 最大562 mJSMJ60R130BFF导通电阻 RDS(ON)@10V 典型114 mΩ雪崩能量 EAS 最大500 mJSMJ60R165AFF导通电阻 RDS(ON)@10V 典型150 mΩ雪崩能量 EAS 最大220 mJSMJ65R099CFFS导通电阻 RDS(ON)@10V 典型90 mΩ雪崩能量 EAS 最大480 mJSMJ65R140BFF导通电阻 RDS(ON)@10V 典型132 mΩ雪崩能量 EAS 最大320 mJSMJ65R140CFF导通电阻 RDS(ON)@10V 典型110 mΩ雪崩能量 EAS 最大300 mJ