Product Detail
SMT400SAHPDC2
SineSemi 中晶新源Core Authorized Distributor
Specifications
- Package
- PDFN5060-8L-GC
- Configuration
- N
- VDS_Max
- 40 V
- ID
- 430 A
- RDS(ON)_Max @VGS=10V
- 0.72 mΩ
- Automotive (Y/N)
- N
- VGS(th)_Typ
- 3 V
- RDS(ON)_Typ @VGS=10V
- 0.6 mΩ
- VGS_Max
- ±20 V
- Tj
- 175 °C
- EAS_Max
- 1040 mJ
- Ciss_Typ
- 5275 pF
- Coss_Typ
- 3181 pF
- Crss_Typ
- 89 pF
- Qg_Typ
- 71 nC
- ESD
- No
- MPQ
- 5000 pcs
- MOQ
- 50000 pcs
- App: Motor Drive
- Y
- App: HF Power
- Y
- App: General Switch
- Y
Not sure how to choose? Read the LV & MV MOSFETs Selection Guide →
Package & Schematic
Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SMT400SAHPDC2
40V N-Channel Power MOSFET
Product Summary
| VDS | RDS(ON)_TYP | I_D_MAX |
|---|---|---|
| 40 V | 0.60 mΩ @VGS = 10V | 430 A |
PDFN5060-8L-GC
Features
- Dual side cooling with low R_θJC(top)
- Ultra low RDS(ON)
- Excellent FoM (figure of merit)
- Excellent thermal performance
- 100% ΔVDS & UIS & Rg tested
Applications
- Motor drives
- High-performance power supplies
- High switching and high speed circuit
Mechanical Data
- Green molding compound
- Moisture sensitivity: level 1 per J-STD-020
- UL flammability classification rating 94V-0
Ordering Information
| Orderable Part Number | Package Type | Device Marking | Form | Quantity (pcs) |
|---|---|---|---|---|
| SMT400SAHPDC2 | PDFN5060-8L-GC | 400SAH | 13'' Tape&Reel | 5,000 |
Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain - Source Voltage | VDS | 40 | V |
| Gate - Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (VGS = 10V) (1) | ID @ TC = 25°C | 430 | A |
| ID @ TC = 100°C | 304 | A | |
| Pulsed Drain Current (2) | IDM | 1720 | A |
| Single Pulse Avalanche Energy (3) | EAS | 1040 | mJ |
| Single Pulse Avalanche Current (L= 0.3mH) | IAS | 55 | A |
| Power Dissipation | PD @ TC = 25°C | 221 | W |
| PD @ TC = 100°C | 110 | W | |
| Junction & Storage Temperature Range | TJ, TSTG | -55 ~ +175 | °C |
Thermal Characteristics
| Parameter | Symbol | Typ. | Max. | Unit |
|---|---|---|---|---|
| Thermal Resistance, Junction-to-Ambient (4) | R_θJA | 40 | 50 | °C/W |
| Thermal Resistance, Junction-to-Case, Bottom (5) | R_θJC | 0.52 | 0.68 | °C/W |
| Thermal Resistance, Junction-to-Case, Top (5) | R_θJC | 0.43 | 0.56 | °C/W |
Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)
Off Characteristics (6)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 40 | — | — | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = 40V, VGS = 0V | — | — | 1.0 | µA |
| TJ = 125°C | — | — | 100 | µA | ||
| Gate-Source Leakage Current | IGSS | VGS = ±20V, VDS = 0V | — | — | ±100 | nA |
On Characteristics (6)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | VGS = VDS, ID = 250µA | 2.0 | 3.0 | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 10V, ID = 20A | — | 0.60 | 0.72 | mΩ |
| Forward Transconductance | gfs | VDS = 5.0V, ID = 20A | — | 72 | — | S |
| Diodes Forward Voltage | VSD | IS = 2.0A, VGS = 0V | — | 0.7 | 1.2 | V |
Dynamic Characteristics (7)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Input Capacitance | Ciss | — | 5275 | — | pF | |
| Output Capacitance | Coss | VDS = 20V, VGS = 0V, f = 1MHz | — | 3181 | — | pF |
| Reverse Transfer Capacitance | Crss | — | 89 | — | pF | |
| Gate Resistance | Rg | VGS = 0V, VDS = 0V, f = 1MHz | — | 1.5 | — | Ω |
Switching Characteristics (7)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Turn-On Delay Time | td(on) | — | 8.4 | — | ns | |
| Rise Time | tr | VGS = 10V, VDS = 20V | — | 17 | — | ns |
| Turn-Off Delay Time | td(off) | ID = 20A, RGEN = 3.0Ω | — | 44 | — | ns |
| Fall Time | tf | — | 20 | — | ns |
Gate Charge Characteristics (7)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Total Gate Charge (VGS = 10V) | Qg | — | 71 | — | nC | |
| Total Gate Charge (VGS = 7.0V) | Qg | VDS = 20V, ID = 20A | — | 52 | — | nC |
| Gate-Source Charge | Qgs | VGS = 10V | — | 21 | — | nC |
| Gate-Drain Charge | Qgd | — | 14.0 | — | nC | |
| Gate Plateau Voltage | Vplateau | — | 4.4 | — | V |
Drain-Source Diode Characteristics (7)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Body Diode Reverse Recovery Time | trr | IF = 20A, dI/dt = 100A/µs, | — | 65 | — | ns |
| Body Diode Reverse Recovery Charge | Qrr | TJ = 25°C | — | 96 | — | nC |
| Diode Forward Current | IS | TC = 25°C | — | — | 430 | A |
Notes:
- This current is chip limited, which is calculated based on Rthjc.
- This current is calculated on single pulse with 10µs Single Pulse.
- Defined by design, not subject to production test, EAS condition: TJ=25°C, VDD=20V, VGS=10V, L=1.0mH.
- Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
- Thermal resistance from junction to the exposed pad.
- Short duration pulse test used to minimize self-heating effect.
- Defined by design, not subject to production.
Typical Electrical and Thermal Characteristics
（曲线图略）
Figure 1: Output Characteristics — ID vs. VDS，VGS = 4.2V / 5.0V / 5.2V / 5.5V / 6.0V / 8.0V / 10V
Figure 2: Transfer Characteristics — ID vs. VGS，VDS = 1.0V，TJ = 25°C / 175°C
Figure 3: On-Resistance vs. Gate-Source Voltage — RDS(on) vs. VGS，ID = 20A，TJ = 25°C / 175°C
Figure 4: On-Resistance vs. Drain Current and Gate Voltage — RDS(on) vs. ID，VGS = 10V，TJ = 25°C / 175°C
Figure 5: On-Resistance vs. Junction Temperature — Normalized RDS(on) vs. TJ，VGS = 10V, ID = 20A
Figure 6: Source-Drain Diode Forward Voltage — IS vs. VSD，TJ = 25°C / 175°C
Figure 7: Gate Threshold Variation vs. Junction Temperature — VGS(th) vs. TJ，ID = 250µA / 1.0mA
Figure 8: Gate Charge Characteristics — VGS vs. Qg，ID = 20A
Figure 9: Capacitance Characteristics — CT vs. VDS，Ciss / Coss / Crss
Figure 10: Power Derating — PD vs. TC
Figure 11: Current Derating — ID vs. TC
Figure 12: Safe Operating Area — ID vs. VDS，TJ(Max) = 175°C，TC = 25°C，pulse width = 1.0µs / 10µs / 100µs / 1.0ms / 10ms / DC，RDS(ON) Limited
Figure 13: Normalized Maximum Transient Thermal Impedance — r(t) vs. Pulse Width (s)，δ = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse；1. Duty cycle δ = t₁ / t₂；2. R_θJC(t) = r(t) × R_θJC
PDFN5060-8L-GC Package Outline
Package Outline Dimensions
NOTES:
- DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
- ALL DIMENSIONS IN MILLIMETER (ANGLE IN DEGREE).
- DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.
| DIM. | MIN. | NOM. | MAX. |
|---|---|---|---|
| A | 0.600 | 0.730 | 0.830 |
| A1 | 0.000 | --- | 0.050 |
| b | 0.300 | 0.400 | 0.500 |
| c | 0.200 | 0.250 | 0.300 |
| D | 5.200 | --- | 5.600 |
| D1 | 5.100 | --- | 5.300 |
| D2 | 3.390 | 3.540 | 3.690 |
| D3 | 4.060 | 4.210 | 4.360 |
| E | 6.000 | --- | 6.300 |
| E1 | 5.760 | --- | 5.960 |
| E2 | 3.590 | 3.740 | 3.890 |
| E3 | 3.570 | 3.720 | 3.870 |
| e | 1.270 Bsc | ||
| K | 1.200 Ref | ||
| K1 | 1.100 | --- | --- |
| L | 0.205 | --- | 0.505 |
| L1 | 0.500 | 0.610 | 0.710 |
| θ1 | 8° | --- | 12° |
DIMENSIONS: MILLIMETERS
Recommended Soldering Footprint
（封装焊盘图略）DIMENSIONS: MILLIMETERS
焊盘图标注尺寸：6.75 / 4.31 / 4.38 / 1.27 / 0.50 / 0.77 / 0.61 / 1.37 / 1.27 / 0.50 / 1.01