SMT400SAHPDC2 产品图

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SMT400SAHPDC2

中晶新源 SineSemi核心代理商

中低压 MOSFETPDFN5060-8L-GC
规格书下载

参数规格

封装
PDFN5060-8L-GC
结构
N
漏源电压 VDS
40 V
漏极电流 ID
430 A
导通电阻 RDS(ON)@10V 最大
0.72 mΩ
车规 (Y/N)
N
阈值电压 VGS(th) 典型
3 V
导通电阻 RDS(ON)@10V 典型
0.6 mΩ
栅源电压 VGS 最大
±20 V
结温 Tj
175 °C
雪崩能量 EAS 最大
1040 mJ
输入电容 Ciss 典型
5275 pF
输出电容 Coss 典型
3181 pF
反向传输电容 Crss 典型
89 pF
总栅极电荷 Qg 典型
71 nC
ESD
No
最小包装量
5000 pcs
最小订购量
50000 pcs
应用推荐-马达驱动
Y
应用推荐-高频电源
Y
应用推荐-通用开关
Y

不确定怎么选？阅读《中低压 MOSFET 选型指南》 →

封装与电路符号

SMT400SAHPDC2 封装外形、引脚配置与电路符号图
封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet）

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMT400SAHPDC2

40V N-Channel Power MOSFET

Product Summary
VDS RDS(ON)_TYP I_D_MAX
40 V 0.60 mΩ @VGS = 10V 430 A

PDFN5060-8L-GC

Features
  • Dual side cooling with low R_θJC(top)
  • Ultra low RDS(ON)
  • Excellent FoM (figure of merit)
  • Excellent thermal performance
  • 100% ΔVDS & UIS & Rg tested
Applications
  • Motor drives
  • High-performance power supplies
  • High switching and high speed circuit
Mechanical Data
  • Green molding compound
  • Moisture sensitivity: level 1 per J-STD-020
  • UL flammability classification rating 94V-0
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMT400SAHPDC2 PDFN5060-8L-GC 400SAH 13'' Tape&Reel 5,000
Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS 40 V
Gate - Source Voltage VGS ±20 V
Continuous Drain Current (VGS = 10V) (1) ID @ TC = 25°C 430 A
ID @ TC = 100°C 304 A
Pulsed Drain Current (2) IDM 1720 A
Single Pulse Avalanche Energy (3) EAS 1040 mJ
Single Pulse Avalanche Current (L= 0.3mH) IAS 55 A
Power Dissipation PD @ TC = 25°C 221 W
PD @ TC = 100°C 110 W
Junction & Storage Temperature Range TJ, TSTG -55 ~ +175 °C
Thermal Characteristics
Parameter Symbol Typ. Max. Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 40 50 °C/W
Thermal Resistance, Junction-to-Case, Bottom (5) R_θJC 0.52 0.68 °C/W
Thermal Resistance, Junction-to-Case, Top (5) R_θJC 0.43 0.56 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics (6)
Parameter Symbol Test Condition Min. Typ. Max. Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 40 — — V
Zero Gate Voltage Drain Current IDSS VDS = 40V, VGS = 0V — — 1.0 µA
TJ = 125°C — — 100 µA
Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V — — ±100 nA
On Characteristics (6)
Parameter Symbol Test Condition Min. Typ. Max. Unit
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA 2.0 3.0 4.0 V
Static Drain-Source On-Resistance RDS(ON) VGS = 10V, ID = 20A — 0.60 0.72 mΩ
Forward Transconductance gfs VDS = 5.0V, ID = 20A — 72 — S
Diodes Forward Voltage VSD IS = 2.0A, VGS = 0V — 0.7 1.2 V
Dynamic Characteristics (7)
Parameter Symbol Test Condition Min. Typ. Max. Unit
Input Capacitance Ciss — 5275 — pF
Output Capacitance Coss VDS = 20V, VGS = 0V, f = 1MHz — 3181 — pF
Reverse Transfer Capacitance Crss — 89 — pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 1.5 — Ω
Switching Characteristics (7)
Parameter Symbol Test Condition Min. Typ. Max. Unit
Turn-On Delay Time td(on) — 8.4 — ns
Rise Time tr VGS = 10V, VDS = 20V — 17 — ns
Turn-Off Delay Time td(off) ID = 20A, RGEN = 3.0Ω — 44 — ns
Fall Time tf — 20 — ns
Gate Charge Characteristics (7)
Parameter Symbol Test Condition Min. Typ. Max. Unit
Total Gate Charge (VGS = 10V) Qg — 71 — nC
Total Gate Charge (VGS = 7.0V) Qg VDS = 20V, ID = 20A — 52 — nC
Gate-Source Charge Qgs VGS = 10V — 21 — nC
Gate-Drain Charge Qgd — 14.0 — nC
Gate Plateau Voltage Vplateau — 4.4 — V
Drain-Source Diode Characteristics (7)
Parameter Symbol Test Condition Min. Typ. Max. Unit
Body Diode Reverse Recovery Time trr IF = 20A, dI/dt = 100A/µs, — 65 — ns
Body Diode Reverse Recovery Charge Qrr TJ = 25°C — 96 — nC
Diode Forward Current IS TC = 25°C — — 430 A

Notes:

  1. This current is chip limited, which is calculated based on Rthjc.
  2. This current is calculated on single pulse with 10µs Single Pulse.
  3. Defined by design, not subject to production test, EAS condition: TJ=25°C, VDD=20V, VGS=10V, L=1.0mH.
  4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  5. Thermal resistance from junction to the exposed pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design, not subject to production.

Typical Electrical and Thermal Characteristics

（曲线图略）

Figure 1: Output Characteristics — ID vs. VDS，VGS = 4.2V / 5.0V / 5.2V / 5.5V / 6.0V / 8.0V / 10V

Figure 2: Transfer Characteristics — ID vs. VGS，VDS = 1.0V，TJ = 25°C / 175°C

Figure 3: On-Resistance vs. Gate-Source Voltage — RDS(on) vs. VGS，ID = 20A，TJ = 25°C / 175°C

Figure 4: On-Resistance vs. Drain Current and Gate Voltage — RDS(on) vs. ID，VGS = 10V，TJ = 25°C / 175°C

Figure 5: On-Resistance vs. Junction Temperature — Normalized RDS(on) vs. TJ，VGS = 10V, ID = 20A

Figure 6: Source-Drain Diode Forward Voltage — IS vs. VSD，TJ = 25°C / 175°C

Figure 7: Gate Threshold Variation vs. Junction Temperature — VGS(th) vs. TJ，ID = 250µA / 1.0mA

Figure 8: Gate Charge Characteristics — VGS vs. Qg，ID = 20A

Figure 9: Capacitance Characteristics — CT vs. VDS，Ciss / Coss / Crss

Figure 10: Power Derating — PD vs. TC

Figure 11: Current Derating — ID vs. TC

Figure 12: Safe Operating Area — ID vs. VDS，TJ(Max) = 175°C，TC = 25°C，pulse width = 1.0µs / 10µs / 100µs / 1.0ms / 10ms / DC，RDS(ON) Limited

Figure 13: Normalized Maximum Transient Thermal Impedance — r(t) vs. Pulse Width (s)，δ = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse；1. Duty cycle δ = t₁ / t₂；2. R_θJC(t) = r(t) × R_θJC

PDFN5060-8L-GC Package Outline

Package Outline Dimensions

NOTES:

  1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
  2. ALL DIMENSIONS IN MILLIMETER (ANGLE IN DEGREE).
  3. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.
DIM. MIN. NOM. MAX.
A 0.600 0.730 0.830
A1 0.000 --- 0.050
b 0.300 0.400 0.500
c 0.200 0.250 0.300
D 5.200 --- 5.600
D1 5.100 --- 5.300
D2 3.390 3.540 3.690
D3 4.060 4.210 4.360
E 6.000 --- 6.300
E1 5.760 --- 5.960
E2 3.590 3.740 3.890
E3 3.570 3.720 3.870
e 1.270 Bsc
K 1.200 Ref
K1 1.100 --- ---
L 0.205 --- 0.505
L1 0.500 0.610 0.710
θ1 8° --- 12°

DIMENSIONS: MILLIMETERS

Recommended Soldering Footprint

（封装焊盘图略）DIMENSIONS: MILLIMETERS

焊盘图标注尺寸：6.75 / 4.31 / 4.38 / 1.27 / 0.50 / 0.77 / 0.61 / 1.37 / 1.27 / 0.50 / 1.01

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