产品详情
SMT400SAHPDC2
中晶新源 SineSemi核心代理商
参数规格
- 封装
- PDFN5060-8L-GC
- 结构
- N
- 漏源电压 VDS
- 40 V
- 漏极电流 ID
- 430 A
- 导通电阻 RDS(ON)@10V 最大
- 0.72 mΩ
- 车规 (Y/N)
- N
- 阈值电压 VGS(th) 典型
- 3 V
- 导通电阻 RDS(ON)@10V 典型
- 0.6 mΩ
- 栅源电压 VGS 最大
- ±20 V
- 结温 Tj
- 175 °C
- 雪崩能量 EAS 最大
- 1040 mJ
- 输入电容 Ciss 典型
- 5275 pF
- 输出电容 Coss 典型
- 3181 pF
- 反向传输电容 Crss 典型
- 89 pF
- 总栅极电荷 Qg 典型
- 71 nC
- ESD
- No
- 最小包装量
- 5000 pcs
- 最小订购量
- 50000 pcs
- 应用推荐-马达驱动
- Y
- 应用推荐-高频电源
- Y
- 应用推荐-通用开关
- Y
封装与电路符号
在线规格书
以下内容整理自原厂规格书，实际参数以原厂正式文件为准。
SMT400SAHPDC2
40V N-Channel Power MOSFET
Product Summary
| V_DS | R_DS(ON)_TYP | I_D_MAX |
|---|---|---|
| 40 V | 0.60 mΩ @V_GS = 10V | 430 A |
PDFN5060-8L-GC
Features
- Dual side cooling with low R_θJC(top)
- Ultra low R_DS(ON)
- Excellent FoM (figure of merit)
- Excellent thermal performance
- 100% ΔVDS & UIS & R_g tested
Applications
- Motor drives
- High-performance power supplies
- High switching and high speed circuit
Mechanical Data
- Green molding compound
- Moisture sensitivity: level 1 per J-STD-020
- UL flammability classification rating 94V-0
Ordering Information
| Orderable Part Number | Package Type | Device Marking | Form | Quantity (pcs) |
|---|---|---|---|---|
| SMT400SAHPDC2 | PDFN5060-8L-GC | 400SAH | 13'' Tape&Reel | 5,000 |
Maximum Ratings (@ T_C = 25°C, unless otherwise specified.)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain - Source Voltage | V_DS | 40 | V |
| Gate - Source Voltage | V_GS | ±20 | V |
| Continuous Drain Current (V_GS = 10V) ^(1) | I_D @ T_C = 25°C | 430 | A |
| I_D @ T_C = 100°C | 304 | A | |
| Pulsed Drain Current ^(2) | I_DM | 1720 | A |
| Single Pulse Avalanche Energy ^(3) | E_AS | 1040 | mJ |
| Single Pulse Avalanche Current (L= 0.3mH) | I_AS | 55 | A |
| Power Dissipation | P_D @ T_C = 25°C | 221 | W |
| P_D @ T_C = 100°C | 110 | W | |
| Junction & Storage Temperature Range | T_J, T_STG | -55 ~ +175 | °C |
Thermal Characteristics
| Parameter | Symbol | Typ. | Max. | Unit |
|---|---|---|---|---|
| Thermal Resistance, Junction-to-Ambient ^(4) | R_θJA | 40 | 50 | °C/W |
| Thermal Resistance, Junction-to-Case, Bottom ^(5) | R_θJC | 0.52 | 0.68 | °C/W |
| Thermal Resistance, Junction-to-Case, Top ^(5) | R_θJC | 0.43 | 0.56 | °C/W |
Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)
Off Characteristics ^(6)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V_(BR)DSS | V_GS = 0V, I_D = 250µA | 40 | — | — | V |
| Zero Gate Voltage Drain Current | I_DSS | V_DS = 40V, V_GS = 0V | — | — | 1.0 | µA |
| T_J = 125°C | — | — | 100 | µA | ||
| Gate-Source Leakage Current | I_GSS | V_GS = ±20V, V_DS = 0V | — | — | ±100 | nA |
On Characteristics ^(6)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Gate Threshold Voltage | V_GS(th) | V_GS = V_DS, I_D = 250µA | 2.0 | 3.0 | 4.0 | V |
| Static Drain-Source On-Resistance | R_DS(ON) | V_GS = 10V, I_D = 20A | — | 0.60 | 0.72 | mΩ |
| Forward Transconductance | g_fs | V_DS = 5.0V, I_D = 20A | — | 72 | — | S |
| Diodes Forward Voltage | V_SD | I_S = 2.0A, V_GS = 0V | — | 0.7 | 1.2 | V |
Dynamic Characteristics ^(7)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Input Capacitance | C_iss | — | 5275 | — | pF | |
| Output Capacitance | C_oss | V_DS = 20V, V_GS = 0V, f = 1MHz | — | 3181 | — | pF |
| Reverse Transfer Capacitance | C_rss | — | 89 | — | pF | |
| Gate Resistance | R_g | V_GS = 0V, V_DS = 0V, f = 1MHz | — | 1.5 | — | Ω |
Switching Characteristics ^(7)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Turn-On Delay Time | t_d(on) | — | 8.4 | — | ns | |
| Rise Time | t_r | V_GS = 10V, V_DS = 20V | — | 17 | — | ns |
| Turn-Off Delay Time | t_d(off) | I_D = 20A, R_GEN = 3.0Ω | — | 44 | — | ns |
| Fall Time | t_f | — | 20 | — | ns |
Gate Charge Characteristics ^(7)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Total Gate Charge (V_GS = 10V) | Q_g | — | 71 | — | nC | |
| Total Gate Charge (V_GS = 7.0V) | Q_g | V_DS = 20V, I_D = 20A | — | 52 | — | nC |
| Gate-Source Charge | Q_gs | V_GS = 10V | — | 21 | — | nC |
| Gate-Drain Charge | Q_gd | — | 14.0 | — | nC | |
| Gate Plateau Voltage | V_plateau | — | 4.4 | — | V |
Drain-Source Diode Characteristics ^(7)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Body Diode Reverse Recovery Time | t_rr | I_F = 20A, dI/dt = 100A/µs, | — | 65 | — | ns |
| Body Diode Reverse Recovery Charge | Q_rr | T_J = 25°C | — | 96 | — | nC |
| Diode Forward Current | I_S | T_C = 25°C | — | — | 430 | A |
Notes:
- This current is chip limited, which is calculated based on Rthjc.
- This current is calculated on single pulse with 10µs Single Pulse.
- Defined by design, not subject to production test, E_AS condition: T_J=25°C, V_DD=20V, V_GS=10V, L=1.0mH.
- Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
- Thermal resistance from junction to the exposed pad.
- Short duration pulse test used to minimize self-heating effect.
- Defined by design, not subject to production.
Typical Electrical and Thermal Characteristics
（曲线图略）
Figure 1: Output Characteristics — I_D vs. V_DS，V_GS = 4.2V / 5.0V / 5.2V / 5.5V / 6.0V / 8.0V / 10V
Figure 2: Transfer Characteristics — I_D vs. V_GS，V_DS = 1.0V，T_J = 25°C / 175°C
Figure 3: On-Resistance vs. Gate-Source Voltage — R_DS(on) vs. V_GS，I_D = 20A，T_J = 25°C / 175°C
Figure 4: On-Resistance vs. Drain Current and Gate Voltage — R_DS(on) vs. I_D，V_GS = 10V，T_J = 25°C / 175°C
Figure 5: On-Resistance vs. Junction Temperature — Normalized R_DS(on) vs. T_J，V_GS = 10V, I_D = 20A
Figure 6: Source-Drain Diode Forward Voltage — I_S vs. V_SD，T_J = 25°C / 175°C
Figure 7: Gate Threshold Variation vs. Junction Temperature — V_GS(th) vs. T_J，I_D = 250µA / 1.0mA
Figure 8: Gate Charge Characteristics — V_GS vs. Q_g，I_D = 20A
Figure 9: Capacitance Characteristics — C_T vs. V_DS，C_iss / C_oss / C_rss
Figure 10: Power Derating — P_D vs. T_C
Figure 11: Current Derating — I_D vs. T_C
Figure 12: Safe Operating Area — I_D vs. V_DS，T_J(Max) = 175°C，T_C = 25°C，pulse width = 1.0µs / 10µs / 100µs / 1.0ms / 10ms / DC，R_DS(ON) Limited
Figure 13: Normalized Maximum Transient Thermal Impedance — r(t) vs. Pulse Width (s)，δ = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse；1. Duty cycle δ = t₁ / t₂；2. R_θJC(t) = r(t) × R_θJC
PDFN5060-8L-GC Package Outline
Package Outline Dimensions
NOTES:
- DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
- ALL DIMENSIONS IN MILLIMETER (ANGLE IN DEGREE).
- DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.
| DIM. | MIN. | NOM. | MAX. |
|---|---|---|---|
| A | 0.600 | 0.730 | 0.830 |
| A1 | 0.000 | --- | 0.050 |
| b | 0.300 | 0.400 | 0.500 |
| c | 0.200 | 0.250 | 0.300 |
| D | 5.200 | --- | 5.600 |
| D1 | 5.100 | --- | 5.300 |
| D2 | 3.390 | 3.540 | 3.690 |
| D3 | 4.060 | 4.210 | 4.360 |
| E | 6.000 | --- | 6.300 |
| E1 | 5.760 | --- | 5.960 |
| E2 | 3.590 | 3.740 | 3.890 |
| E3 | 3.570 | 3.720 | 3.870 |
| e | 1.270 Bsc | ||
| K | 1.200 Ref | ||
| K1 | 1.100 | --- | --- |
| L | 0.205 | --- | 0.505 |
| L1 | 0.500 | 0.610 | 0.710 |
| θ1 | 8° | --- | 12° |
DIMENSIONS: MILLIMETERS
Recommended Soldering Footprint
（封装焊盘图略）DIMENSIONS: MILLIMETERS
焊盘图标注尺寸：6.75 / 4.31 / 4.38 / 1.27 / 0.50 / 0.77 / 0.61 / 1.37 / 1.27 / 0.50 / 1.01