SMT4004AHPFWQ product image

Product Detail

SMT4004AHPFWQ

SineSemi 中晶新源Core Authorized Distributor

LV & MV MOSFETsAutomotivePDFN5060-8L-BWHOT

Specifications

Package
PDFN5060-8L-BW
VDS_Max
40 V
ID
62 A
RDS(ON)_Max @VGS=10V
4.5 mΩ
Automotive (Y/N)
Y
VGS(th)_Typ
3 V
RDS(ON)_Typ @VGS=10V
3.7 mΩ
VGS_Max
±20 V
Tj
175 °C
EAS_Max
118 mJ

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Online Datasheet

Compiled from the manufacturer's datasheet; the official document prevails.

SMT4004AHPFWQ

40V H-Bridge N-Channel Power MOSFET

Sinesemi Automotive MOSFET — AEC-Q101 Qualified, Compact H-Bridge Design

Product Summary
VDS RDS(ON), max ID, max
40 V 4.5 mΩ @ VGS = 10V 62 A

PDFN5060-8L-BW (H-Bridge: Q1-Q4 integrated)

Features
  • N-Channel Enhancement Mode - Standard Level
  • AEC-Q101 Qualified, PPAP Capable
  • 175°C Operating Temperature
  • 100% ∆VDS & UIS & Rg Tested
  • Wettable Flank for Improved Optical Inspection
Application
  • Compact Design for Motor Driver and Specific Automotive Applications
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMT4004AHPFWQ PDFN5060-8L-BW 4004AHFQ 13" Tape&Reel 5,000
Maximum Ratings (@ TA = 25°C)
Parameter Symbol Value Unit
Drain - Source Voltage VDS 40 V
Gate - Source Voltage VGS ±20 V
Continuous Drain Current (VGS = 10V) (1) ID TA = 25°C: 62 A
TA = 100°C: 44 A
Pulsed Drain Current (2) IDM 245 A
Single Pulse Avalanche Energy (3) EAS 118 mJ
Single Pulse Avalanche Current (L = 0.1mH) IAS 28 A
Power Dissipation PD TA = 25°C: 30 W
TA = 100°C: 15 W
Junction & Storage Temperature Range TJ, TSTG -55 ~ +175 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 65 78 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC 4.2 5.0 °C/W

Q1~Q4 Electrical Characteristics (@ TJ = 25°C)

On Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage VGS(th) ID = 250µA 2.0 3.0 4.0 V
Static Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 20A — 3.7 4.5 mΩ
Forward Transconductance gfs ID = 20A — 15 — S
Diodes Forward Voltage VSD IS = 2A — 0.7 1.2 V
Dynamic/Switching/Gate Charge/Diode Characteristics

Ciss=962pF, Coss=550pF, Crss=25pF, Rg=4.2Ω, td(on)=5.7ns, tr=11ns, td(off)=14ns, tf=8.0ns, Qg=14nC, Qgs=4.6nC, Qgd=2.9nC, Vplateau=5.2V, trr=30ns, Qrr=13nC, IS=57A.

Notes:

  1. This current is chip limited, which is calculated based on Rθjc.
  2. This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
  3. Defined by design; not subject to production test.
  4. Device mounted on FR4 substrate PC board with 2oz copper on 1inch square cooling area.
  5. Thermal resistance from junction to the exposed pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design, not subject to production.
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