Specifications
- Package
- PDFN3333-8L
- Configuration
- N
- VDS_Max
- 40 V
- ID
- 128 A
- RDS(ON)_Max @VGS=10V
- 2 mΩ
- Automotive (Y/N)
- N
- VGS(th)_Typ
- 1.7 V
- RDS(ON)_Typ @VGS=10V
- 1.6 mΩ
- RDS(ON)_Typ @VGS=4.5V
- 2.4 mΩ
- RDS(ON)_Max @VGS=4.5V
- 3 mΩ
- VGS_Max
- ±20 V
- Tj
- 150 °C
- EAS_Max
- 292 mJ
- Ciss_Typ
- 2091 pF
- Coss_Typ
- 1260 pF
- Crss_Typ
- 45 pF
- Qg_Typ
- 30 nC
- ESD
- No
- MPQ
- 5000 pcs
- MOQ
- 50000 pcs
- App: Motor Drive
- Y
- App: General Switch
- Y
Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SMT4002ALR
40V N-Channel Power MOSFET
Product Summary
| V_DS |
R_DS(ON)_TYP |
I_D_MAX |
| 40 V |
1.6 mΩ @ V_GS = 10V |
128 A |
|
2.4 mΩ @ V_GS = 4.5V |
|
PDFN3333-8L
Features
- Low On-Resistance
- Excellent FoM (figure of merit)
- 100% ΔVDS & UIS & Rg Tested
Applications
- Motor drives
- Load switching
- High frequency switching, synchronous rectification
Mechanical Data
- Green Molding Compound
- Moisture Sensitivity: Level 1 per J-STD-020
- UL Flammability Classification Rating 94V-0
Ordering Information
| Orderable Part Number |
Package Type |
Device Marking |
Form |
Quantity (pcs) |
| SMT4002ALR |
PDFN3333-8L |
4002AL |
13" Tape&Reel |
5,000 |
Maximum Ratings (@ T_C = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Value |
Units |
| Drain - Source Voltage |
V_DS |
40 |
V |
| Gate - Source Voltage |
V_GS |
±20 |
V |
| Continuous Drain Current (V_GS = 10V) ^(1) |
I_D @ T_C = 25°C |
128 |
A |
|
I_D @ T_C = 100°C |
81 |
A |
| Pulsed Drain Current ^(2) |
I_DM |
513 |
A |
| Single Pulse Avalanche Energy ^(3) |
E_AS |
292 |
mJ |
| Single Pulse Avalanche Current (L = 0.1mH) |
I_AS |
42 |
A |
| Power Dissipation |
P_D @ T_C = 25°C |
52 |
W |
|
P_D @ T_C = 100°C |
21 |
W |
| Junction & Storage Temperature Range |
T_J, T_STG |
-55 ~ +150 |
°C |
Thermal Characteristics
| Parameter |
Symbol |
Typ. |
Max. |
Unit |
| Thermal Resistance, Junction-to-Ambient ^(4) |
R_θJA |
40 |
50 |
°C/W |
| Thermal Resistance, Junction-to-Case ^(5) |
R_θJC |
1.8 |
2.4 |
°C/W |
Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)
Off Characteristics ^(6)
| Parameter |
Symbol |
Test Condition |
Min. |
Typ. |
Max. |
Unit |
| Drain-Source Breakdown Voltage |
V_(BR)DSS |
V_GS = 0V, I_D = 250µA |
40 |
— |
— |
V |
| Zero Gate Voltage Drain Current |
I_DSS |
V_DS = 40V, V_GS = 0V |
— |
— |
1.0 |
µA |
|
|
T_J = 125°C |
— |
— |
100 |
µA |
| Gate-Source Leakage Current |
I_GSS |
V_GS = ±20V, V_DS = 0V |
— |
— |
±100 |
nA |
On Characteristics ^(6)
| Parameter |
Symbol |
Test Condition |
Min. |
Typ. |
Max. |
Unit |
| Gate Threshold Voltage |
V_GS(th) |
V_GS = V_DS, I_D = 250µA |
1.2 |
1.7 |
2.5 |
V |
| Static Drain-Source On-Resistance |
R_DS(ON) |
V_GS = 10V, I_D = 20A |
— |
1.6 |
2.0 |
mΩ |
|
|
V_GS = 4.5V, I_D = 15A |
— |
2.4 |
3.0 |
mΩ |
| Forward Transconductance |
g_fs |
V_DS = 5.0V, I_D = 20A |
— |
47 |
— |
S |
| Diodes Forward Voltage |
V_SD |
I_S = 2.0A, V_GS = 0V |
— |
0.7 |
1.2 |
V |
Dynamic Characteristics ^(7)
| Parameter |
Symbol |
Test Condition |
Min. |
Typ. |
Max. |
Unit |
| Input Capacitance |
C_iss |
|
— |
2091 |
— |
pF |
| Output Capacitance |
C_oss |
V_DS = 20V, V_GS = 0V, f = 1MHz |
— |
1260 |
— |
pF |
| Reverse Transfer Capacitance |
C_rss |
|
— |
45 |
— |
pF |
| Gate Resistance |
R_g |
V_GS = 0V, V_DS = 0V, f = 1MHz |
— |
1.7 |
— |
Ω |
Switching Characteristics ^(7)
| Parameter |
Symbol |
Test Condition |
Min. |
Typ. |
Max. |
Unit |
| Turn-On Delay Time |
t_d(on) |
|
— |
3.6 |
— |
ns |
| Rise Time |
t_r |
V_GS = 10V, V_DS = 20V |
— |
6.6 |
— |
ns |
| Turn-Off Delay Time |
t_d(off) |
I_D = 20A, R_GEN = 3.0Ω |
— |
24 |
— |
ns |
| Fall Time |
t_f |
|
— |
10 |
— |
ns |
Gate Charge Characteristics ^(7)
| Parameter |
Symbol |
Test Condition |
Min. |
Typ. |
Max. |
Unit |
| Total Gate Charge (V_GS = 10V) |
Q_g |
|
— |
30 |
— |
nC |
| Total Gate Charge (V_GS = 4.5V) |
Q_g |
V_DS = 20V, I_D = 20A |
— |
— |
14.6 |
nC |
| Gate-Source Charge |
Q_gs |
V_GS = 10V |
— |
6.3 |
— |
nC |
| Gate-Drain Charge |
Q_gd |
|
— |
4.1 |
— |
nC |
| Gate Plateau Voltage |
V_plateau |
|
— |
3.0 |
— |
V |
Drain-Source Diode Characteristics ^(7)
| Parameter |
Symbol |
Test Condition |
Min. |
Typ. |
Max. |
Unit |
| Body Diode Reverse Recovery Time |
t_rr |
I_F = 20A, dI/dt = 100A/µs, |
— |
39 |
— |
ns |
| Body Diode Reverse Recovery Charge |
Q_rr |
T_J = 25°C |
— |
43 |
— |
nC |
| Diode Forward Current |
I_S |
T_C = 25°C |
— |
— |
124 |
A |
Notes:
- This current is chip limited, which is calculated based on Rthjc.
- This current is calculated on single pulse with 10µs Single Pulse.
- Defined by design, not subject to production test, E_AS condition: T_J=25°C, V_DD=20V, V_GS=10V, L=1.0mH.
- Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
- Thermal resistance from junction to the exposed pad.
- Short duration pulse test used to minimize self-heating effect.
- Defined by design, not subject to production.
Typical Electrical and Thermal Characteristics
- Figure 1: Output Characteristics（曲线图略）
- Figure 2: Transfer Characteristics（曲线图略）
- Figure 3: On-Resistance vs. Gate-Source Voltage（曲线图略）
- Figure 4: On-Resistance vs. Drain Current and Gate Voltage（曲线图略）
- Figure 5: On-Resistance vs. Junction Temperature（曲线图略）
- Figure 6: Source-Drain Diode Forward Voltage（曲线图略）
- Figure 7: Gate Threshold Variation vs. Junction Temperature（曲线图略）
- Figure 8: Gate Charge Characteristics（曲线图略）
- Figure 9: Capacitance Characteristics（曲线图略）
- Figure 10: Power Derating（曲线图略）
- Figure 11: Current Derating（曲线图略）
- Figure 12: Safe Operating Area（曲线图略）
- Figure 13: Normalized Maximum Transient Thermal Impedance（曲线图略）
Figure 13 notes:
- Duty cycle δ = t_1 / t_2
- R_JC(t) = r(t) * R_JC
δ = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PDFN3333-8L Package Outline
Package Dimensions
| DIM. |
MIN. |
NOM. |
MAX. |
| A |
0.70 |
0.80 |
0.90 |
| b |
0.20 |
0.30 |
0.40 |
| c |
0.10 |
0.15 |
0.25 |
| D |
3.20 |
3.30 |
3.40 |
| D1 |
3.00 |
3.15 |
3.25 |
| D2 |
2.35 |
— |
2.69 |
| E |
3.20 |
3.35 |
3.45 |
| E1 |
2.85 |
3.10 |
3.20 |
| E2 |
1.48 |
— |
1.98 |
| e |
0.65 BSC |
|
|
| H |
0.25 |
— |
0.60 |
| L |
0.25 |
0.40 |
0.50 |
| a |
— |
— |
15° |
DIMENSIONS: MILLIMETERS
Notes:
- DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
- ALL DIMENSIONS IN MILLIMETER (ANGLE IN DEGREE).
- DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.
Recommended Soldering Footprint (DIMENSIONS: MILLIMETERS)
| Dimension |
Value |
| Overall height |
3.700 |
| Overall width |
2.550 |
| Pad pitch (e) |
0.650 |
| Pad length |
0.400 |
| Pad width |
0.515 |
| Pad-to-pad gap (top) |
0.675 |
| Center pad width |
1.930 |
| Center pad length (outer) |
0.400 |
PIN Configuration (Top View)
D D D D
S S S G
Schematic Diagram: G — gate, D — drain, S — source (standard N-Channel MOSFET symbol)
