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SMT4002ALR

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中低压 MOSFETPDFN3333-8L

参数规格

封装: PDFN3333-8L
结构: N
漏源电压 VDS: 40 V
漏极电流 ID: 128 A
导通电阻 RDS(ON)@10V 最大: 2 mΩ
车规 (Y/N): N
阈值电压 VGS(th) 典型: 1.7 V
导通电阻 RDS(ON)@10V 典型: 1.6 mΩ
导通电阻 RDS(ON)@4.5V 典型: 2.4 mΩ
导通电阻 RDS(ON)@4.5V 最大: 3 mΩ
栅源电压 VGS 最大: ±20 V
结温 Tj: 150 °C
雪崩能量 EAS 最大: 292 mJ
输入电容 Ciss 典型: 2091 pF
输出电容 Coss 典型: 1260 pF
反向传输电容 Crss 典型: 45 pF
总栅极电荷 Qg 典型: 30 nC
ESD: No
最小包装量: 5000 pcs
最小订购量: 50000 pcs
应用推荐-马达驱动: Y
应用推荐-通用开关: Y

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMT4002ALR

40V N-Channel Power MOSFET

Product Summary

V_DS	R_DS(ON)_TYP	I_D_MAX
40 V	1.6 mΩ @ V_GS = 10V	128 A
	2.4 mΩ @ V_GS = 4.5V

PDFN3333-8L

Features

Low On-Resistance
Excellent FoM (figure of merit)
100% ΔVDS & UIS & Rg Tested

Applications

Motor drives
Load switching
High frequency switching, synchronous rectification

Mechanical Data

Green Molding Compound
Moisture Sensitivity: Level 1 per J-STD-020
UL Flammability Classification Rating 94V-0

Ordering Information

Orderable Part Number	Package Type	Device Marking	Form	Quantity (pcs)
SMT4002ALR	PDFN3333-8L	4002AL	13" Tape&Reel	5,000

Maximum Ratings (@ T_C = 25°C, unless otherwise specified.)

Parameter	Symbol	Value	Units
Drain - Source Voltage	V_DS	40	V
Gate - Source Voltage	V_GS	±20	V
Continuous Drain Current (V_GS = 10V) ^(1)	I_D @ T_C = 25°C	128	A
	I_D @ T_C = 100°C	81	A
Pulsed Drain Current ^(2)	I_DM	513	A
Single Pulse Avalanche Energy ^(3)	E_AS	292	mJ
Single Pulse Avalanche Current (L = 0.1mH)	I_AS	42	A
Power Dissipation	P_D @ T_C = 25°C	52	W
	P_D @ T_C = 100°C	21	W
Junction & Storage Temperature Range	T_J, T_STG	-55 ~ +150	°C

Thermal Characteristics

Parameter	Symbol	Typ.	Max.	Unit
Thermal Resistance, Junction-to-Ambient ^(4)	R_θJA	40	50	°C/W
Thermal Resistance, Junction-to-Case ^(5)	R_θJC	1.8	2.4	°C/W

Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)

Off Characteristics ^(6)

Parameter	Symbol	Test Condition	Min.	Typ.	Max.	Unit
Drain-Source Breakdown Voltage	V_(BR)DSS	V_GS = 0V, I_D = 250µA	40	—	—	V
Zero Gate Voltage Drain Current	I_DSS	V_DS = 40V, V_GS = 0V	—	—	1.0	µA
		T_J = 125°C	—	—	100	µA
Gate-Source Leakage Current	I_GSS	V_GS = ±20V, V_DS = 0V	—	—	±100	nA

On Characteristics ^(6)

Parameter	Symbol	Test Condition	Min.	Typ.	Max.	Unit
Gate Threshold Voltage	V_GS(th)	V_GS = V_DS, I_D = 250µA	1.2	1.7	2.5	V
Static Drain-Source On-Resistance	R_DS(ON)	V_GS = 10V, I_D = 20A	—	1.6	2.0	mΩ
		V_GS = 4.5V, I_D = 15A	—	2.4	3.0	mΩ
Forward Transconductance	g_fs	V_DS = 5.0V, I_D = 20A	—	47	—	S
Diodes Forward Voltage	V_SD	I_S = 2.0A, V_GS = 0V	—	0.7	1.2	V

Dynamic Characteristics ^(7)

Parameter	Symbol	Test Condition	Min.	Typ.	Max.	Unit
Input Capacitance	C_iss		—	2091	—	pF
Output Capacitance	C_oss	V_DS = 20V, V_GS = 0V, f = 1MHz	—	1260	—	pF
Reverse Transfer Capacitance	C_rss		—	45	—	pF
Gate Resistance	R_g	V_GS = 0V, V_DS = 0V, f = 1MHz	—	1.7	—	Ω

Switching Characteristics ^(7)

Parameter	Symbol	Test Condition	Min.	Typ.	Max.	Unit
Turn-On Delay Time	t_d(on)		—	3.6	—	ns
Rise Time	t_r	V_GS = 10V, V_DS = 20V	—	6.6	—	ns
Turn-Off Delay Time	t_d(off)	I_D = 20A, R_GEN = 3.0Ω	—	24	—	ns
Fall Time	t_f		—	10	—	ns

Gate Charge Characteristics ^(7)

Parameter	Symbol	Test Condition	Min.	Typ.	Max.	Unit
Total Gate Charge (V_GS = 10V)	Q_g		—	30	—	nC
Total Gate Charge (V_GS = 4.5V)	Q_g	V_DS = 20V, I_D = 20A	—	—	14.6	nC
Gate-Source Charge	Q_gs	V_GS = 10V	—	6.3	—	nC
Gate-Drain Charge	Q_gd		—	4.1	—	nC
Gate Plateau Voltage	V_plateau		—	3.0	—	V

Drain-Source Diode Characteristics ^(7)

Parameter	Symbol	Test Condition	Min.	Typ.	Max.	Unit
Body Diode Reverse Recovery Time	t_rr	I_F = 20A, dI/dt = 100A/µs,	—	39	—	ns
Body Diode Reverse Recovery Charge	Q_rr	T_J = 25°C	—	43	—	nC
Diode Forward Current	I_S	T_C = 25°C	—	—	124	A

Notes:

This current is chip limited, which is calculated based on Rthjc.
This current is calculated on single pulse with 10µs Single Pulse.
Defined by design, not subject to production test, E_AS condition: T_J=25°C, V_DD=20V, V_GS=10V, L=1.0mH.
Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
Thermal resistance from junction to the exposed pad.
Short duration pulse test used to minimize self-heating effect.
Defined by design, not subject to production.

Typical Electrical and Thermal Characteristics

Figure 1: Output Characteristics（曲线图略）
Figure 2: Transfer Characteristics（曲线图略）
Figure 3: On-Resistance vs. Gate-Source Voltage（曲线图略）
Figure 4: On-Resistance vs. Drain Current and Gate Voltage（曲线图略）
Figure 5: On-Resistance vs. Junction Temperature（曲线图略）
Figure 6: Source-Drain Diode Forward Voltage（曲线图略）
Figure 7: Gate Threshold Variation vs. Junction Temperature（曲线图略）
Figure 8: Gate Charge Characteristics（曲线图略）
Figure 9: Capacitance Characteristics（曲线图略）
Figure 10: Power Derating（曲线图略）
Figure 11: Current Derating（曲线图略）
Figure 12: Safe Operating Area（曲线图略）
Figure 13: Normalized Maximum Transient Thermal Impedance（曲线图略）

Figure 13 notes:

Duty cycle δ = t_1 / t_2
R_JC(t) = r(t) * R_JC

δ = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

PDFN3333-8L Package Outline

Package Dimensions

DIM.	MIN.	NOM.	MAX.
A	0.70	0.80	0.90
b	0.20	0.30	0.40
c	0.10	0.15	0.25
D	3.20	3.30	3.40
D1	3.00	3.15	3.25
D2	2.35	—	2.69
E	3.20	3.35	3.45
E1	2.85	3.10	3.20
E2	1.48	—	1.98
e	0.65 BSC
H	0.25	—	0.60
L	0.25	0.40	0.50
a	—	—	15°

DIMENSIONS: MILLIMETERS

Notes:

DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
ALL DIMENSIONS IN MILLIMETER (ANGLE IN DEGREE).
DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.

Recommended Soldering Footprint (DIMENSIONS: MILLIMETERS)

Dimension	Value
Overall height	3.700
Overall width	2.550
Pad pitch (e)	0.650
Pad length	0.400
Pad width	0.515
Pad-to-pad gap (top)	0.675
Center pad width	1.930
Center pad length (outer)	0.400

PIN Configuration (Top View)

D  D  D  D
S  S  S  G

Schematic Diagram: G — gate, D — drain, S — source (standard N-Channel MOSFET symbol)

参数规格

在线规格书

SMT4002ALR

40V N-Channel Power MOSFET

Product Summary

Features

Applications

Mechanical Data

Ordering Information

Maximum Ratings (@ T_C = 25°C, unless otherwise specified.)

Thermal Characteristics

Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)

Off Characteristics ^(6)

On Characteristics ^(6)

Dynamic Characteristics ^(7)

Switching Characteristics ^(7)

Gate Charge Characteristics ^(7)

Drain-Source Diode Characteristics ^(7)

Typical Electrical and Thermal Characteristics

PDFN3333-8L Package Outline

Package Dimensions

Recommended Soldering Footprint (DIMENSIONS: MILLIMETERS)

PIN Configuration (Top View)

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