SMT4001DHTQ product image

Product Detail

SMT4001DHTQ

SineSemi 中晶新源Core Authorized Distributor

LV & MV MOSFETsAutomotiveTO263-3L
Download Datasheet

Specifications

Package
TO263-3L
Configuration
N
VDS_Max
40 V
ID
302 A
RDS(ON)_Max @VGS=10V
1.4 mΩ
Automotive (Y/N)
Y
VGS(th)_Typ
3 V
RDS(ON)_Typ @VGS=10V
1.1 mΩ
VGS_Max
±20 V
Tj
175 °C
EAS_Max
960 mJ
Ciss_Typ
5654 pF
Coss_Typ
3337 pF
Crss_Typ
99 pF
Qg_Typ
73 nC
ESD
No
MPQ
800 pcs
MOQ
4000 pcs
App: Motor Drive
Y
App: HF Power
Y
App: Battery Protection
Y
App: General Switch
Y

Package & Schematic

SMT4001DHTQ package outline, pin configuration and schematic
Package outline · Pin configuration · Schematic (from SineSemi official datasheet)

Online Datasheet

Compiled from the manufacturer's datasheet; the official document prevails.

SMT4001DHTQ

40V N-Channel Power MOSFET

Product Summary
V_DS R_DS(ON), max I_D, max
40 V 1.4 mΩ @ V_GS = 10V 302 A

TO263-3L

Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMT4001DHTQ TO263-3L 4001DHQ 13'' Tape&Reel 800
Maximum Ratings (@ T_C = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage V_DS 40 V
Gate - Source Voltage V_GS ±20 V
Continuous Drain Current (V_GS = 10V) ^(1) I_D @ T_C = 25°C 302 A
I_D @ T_C = 100°C 214 A
Pulsed Drain Current ^(2) I_DM 1208 A
Single Pulse Avalanche Energy ^(3) E_AS 960 mJ
Single Pulse Avalanche Current (L = 0.1mH) I_AS 80 A
Power Dissipation P_D @ T_C = 25°C 208 W
P_D @ T_C = 100°C 104 W
Junction & Storage Temperature Range T_J, T_STG -55 ~ +175 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient ^(4) R_θJA 33 42 °C/W
Thermal Resistance, Junction-to-Case ^(5) R_θJC 0.55 0.72 °C/W

Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)

Off Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V_(BR)DSS V_GS = 0V, I_D = 250µA 40 — — V
Zero Gate Voltage Drain Current I_DSS V_DS = 40V, V_GS = 0V — — 1.0 µA
T_J = 125°C — — 100 µA
Gate-Source Leakage Current I_GSS V_GS = ±20V, V_DS = 0V — — ±100 nA
On Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage V_GS(th) V_GS = V_DS, I_D = 250µA 2.0 3.0 4.0 V
Static Drain-Source On-Resistance R_DS(on) V_GS = 10V, I_D = 20A — 1.1 1.4 mΩ
Forward Transconductance g_fs V_DS = 5.0V, I_D = 20A — 51 — S
Diode Forward Voltage V_SD I_S = 2.0A, V_GS = 0V — 0.7 1.2 V
Dynamic Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance C_iss — — — pF
Output Capacitance C_oss V_DS = —V, V_GS = 0V, f = 1MHz — — — pF
Reverse Transfer Capacitance C_rss — — — pF
Gate Resistance R_g V_GS = 0V, V_DS = 0V, f = 1MHz — 1.9 — Ω
Switching Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time t_d(on) — 9.4 — ns
Rise Time t_r V_GS = 10V, V_DS = 20V — 22 — ns
Turn-Off Delay Time t_d(off) I_D = 20A, R_GEN = 3.0Ω — 49 — ns
Fall Time t_f — 23 — ns
Gate Charge Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Gate Plateau Voltage V_plateau — 4.5 — V
Drain-Source Diode Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Body Diode Reverse Recovery Time t_rr I_F = 20A, dI/dt = 100A/s — 72 — ns
Body Diode Reverse Recovery Charge Q_rr T_J = 25°C — 110 — nC
Diode Forward Current I_S T_C = 25°C — — 302 A

Notes:

  1. This current is chip limited, which is calculated based on R_θJC.
  2. This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
  3. Defined by design; not subject to production test.
  4. Device mounted on FR-4 substrate PC board with 2oz copper on 1inch square cooling area.
  5. Thermal resistance from junction to the exposed pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design, not subject to production.
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