Product Detail

SMT3001BHP

SineSemi 中晶新源Core Authorized Distributor

LV & MV MOSFETsPDFN5060-8L

Download Datasheet

Specifications

Package: PDFN5060-8L
Configuration: N
VDS_Max: 30 V
ID: 215 A
RDS(ON)_Max @VGS=10V: 1.3 mΩ
Automotive (Y/N): N
VGS(th)_Typ: 3 V
RDS(ON)_Typ @VGS=10V: 1 mΩ
VGS_Max: ±20 V
Tj: 150 °C
EAS_Max: 462 mJ
Ciss_Typ: 3290 pF
Coss_Typ: 1850 pF
Crss_Typ: 140 pF
Qg_Typ: 47 nC
ESD: No
MPQ: 5000 pcs
MOQ: 50000 pcs
App: Motor Drive: Y
App: HF Power: Y
App: Battery Protection: Y
App: General Switch: Y

Not sure how to choose? Read the LV & MV MOSFETs Selection Guide →

Package & Schematic

SMT3001BHP package outline, pin configuration and schematic — Package outline · Pin configuration · Schematic (from SineSemi official datasheet)

Online Datasheet

Compiled from the manufacturer's datasheet; the official document prevails.

SMT3001BHP

30V N-Channel Power MOSFET

Product Summary

V_DS	R_DS(ON), max	I_D, max
30 V	1.3 mΩ @ V_GS = 10V	215 A

PDFN5060-8L

Maximum Ratings (@ T_C = 25°C, unless otherwise specified.)

Parameter	Symbol	Value	Unit
Drain - Source Voltage	V_DS	30	V
Gate - Source Voltage	V_GS	±20	V
Continuous Drain Current ⁽¹⁾	I_D @ T_C = 25°C	215	A
	I_D @ T_C = 100°C	136	A
Pulsed Drain Current ⁽²⁾	I_DM	749	A
Single Pulse Avalanche Energy ⁽³⁾	E_AS	462	mJ
Single Pulse Avalanche Current (L = 0.1mH)	I_AS	58	A
Power Dissipation	P_D @ T_C = 25°C	89	W
	P_D @ T_C = 100°C	36	W
Junction & Storage Temperature Range	T_J, T_STG	-55~+150	°C

Thermal Characteristics

Parameter	Symbol	Typ	Max	Unit
Thermal Resistance, Junction-to-Ambient ⁽⁴⁾	R_θJA	32	40	°C/W
Thermal Resistance, Junction-to-Case ⁽⁵⁾	R_θJC	1.1	1.4	°C/W

Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)

Off Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Drain-Source Breakdown Voltage	V_(BR)DSS	V_GS = 0V, I_D = 250µA	30	—	—	V
Zero Gate Voltage Drain Current	I_DSS	V_DS = 30V, V_GS = 0V	—	—	1.0	µA
		T_J = 125°C	—	—	100	µA
Gate-Source Leakage Current	I_GSS	V_GS = ±20V, V_DS = 0V	—	—	±100	nA

On Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Gate Threshold Voltage	V_GS(th)	V_GS = V_DS, I_D = 250µA	2.0	3.0	4.0	V
Static Drain-Source On-Resistance	R_DS(on)	V_GS = 10V, I_D = 20A	—	1.0	1.3	mΩ
Forward Transconductance	g_fs	V_DS = 5.0V, I_D = 20A	—	41	—	S
Diodes Forward Voltage	V_SD	I_S = 2.0A, V_GS = 0V	—	0.7	1.2	V

Dynamic Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Input Capacitance	C_iss	V_DS = 15V, V_GS = 0V, f = 1MHz	—	3290	—	pF
Output Capacitance	C_oss		—	1850	—	pF
Reverse Transfer Capacitance	C_rss		—	140	—	pF
Gate Resistance	R_g	V_GS = 0V, V_DS = 0V, f = 1MHz	—	1.6	—	Ω

Switching Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Turn-On Delay Time	t_d(on)	V_GS = 10V, V_DS = 15V	—	6.3	—	ns
Rise Time	t_r	I_D = 20A, R_GEN = 3.0Ω	—	14.6	—	ns
Turn-Off Delay Time	t_d(off)		—	26	—	ns
Fall Time	t_f		—	10.6	—	ns

Gate Charge Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Total Gate Charge (V_GS = 10V)	Q_g	V_DS = 15V, I_D = 20A	—	47	—	nC
Gate-Source Charge	Q_gs	V_GS = 10V	—	12.7	—	nC
Gate-Drain Charge	Q_gd		—	8.3	—	nC
Gate Plateau Voltage	V_plateau		—	4.3	—	V

Drain-Source Diode Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Body Diode Reverse Recovery Time	t_rr	I_S = 20A, di/dt = 100A/µs	—	42	—	ns
Body Diode Reverse Recovery Charge	Q_rr	T_J = 25°C	—	28	—	nC
Diode Forward Current	I_S	T_C = 25°C	—	—	120	A

Notes:

This current is chip limited, which is calculated based on R_θJC.
This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
Defined by design, not subject to production test.
Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
Thermal resistance from junction to the exposed drain pad.
Short duration pulse test used to minimize self-heating effect.
Defined by design, not subject to production.