SMT20T07AHTL product image

Product Detail

SMT20T07AHTL

SineSemi 中晶新源Core Authorized Distributor

LV & MV MOSFETsTOLL

Specifications

Package
TOLL
VDS_Max
200 V
ID
149 A
RDS(ON)_Max @VGS=10V
7.9 mΩ
VGS(th)_Typ
3.4 V
RDS(ON)_Typ @VGS=10V
6.7 mΩ
VGS_Max
±20 V
Tj
175 °C
EAS_Max
1440 mJ
Ciss_Typ
6087 pF
Coss_Typ
448 pF
Crss_Typ
16 pF
Qg_Typ
88 nC

Online Datasheet

Compiled from the manufacturer's datasheet; the official document prevails.

SMT20T07AHTL

200V N-Channel Power MOSFET

Product Summary
V_DS R_DS(ON), max I_D, max
200 V 7.9 mΩ @ V_GS = 10V 149 A

TOLL

Features
  • Low On-Resistance
  • Excellent FoM (figure of merit)
  • 100% ∆VDS & UIS & Rg Tested
  • RoHS compliant, HALOGEN FREE
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMT20T07AHTL TOLL 20T07AH 13" Tape&Reel 2,000
Maximum Ratings (@ T_A = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage V_DS 200 V
Gate - Source Voltage V_GS ±20 V
Continuous Drain Current (V_GS = 10V) ^(1) I_D T_A = 25°C: 149 A
T_A = 100°C: 105 A
Pulsed Drain Current ^(2) I_DM 596 A
Single Pulse Avalanche Energy ^(3) E_AS 1440 mJ
Single Pulse Avalanche Current (L = 0.3mH) I_AS 85 A
Power Dissipation P_D T_A = 25°C: 500 W
T_A = 100°C: 250 W
Junction & Storage Temperature Range T_J, T_STG -55 ~ +175 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient ^(4) R_θJA 20 25 °C/W
Thermal Resistance, Junction-to-Case ^(5) R_θJC 0.23 0.30 °C/W

Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)

Off Characteristics ^(7)
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V_(BR)DSS V_GS = 0V, I_D = 250µA 200 — — V
Zero Gate Voltage Drain Current I_DSS V_DS = 200V, V_GS = 0V — — 1.0 µA
T_J = 125°C — — 100 µA
Gate-Source Leakage Current I_GSS V_GS = ±20V, V_DS = 0V — — ±100 nA
On Characteristics ^(7)
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage V_GS(th) V_DS = V_GS, I_D = 250µA 2.5 3.4 4.5 V
Static Drain-Source On-Resistance R_DS(on) V_GS = 10V, I_D = 80A — 6.7 7.9 mΩ
Forward Transconductance g_fs V_DS = 5.0V, I_D = 20A — 63 — S
Diodes Forward Voltage V_SD I_S = 2.0A, V_GS = 0V — 0.7 1.2 V
Dynamic Characteristics ^(7)
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance C_iss V_DS = 100V, V_GS = 0V, f = 1MHz — 6087 — pF
Output Capacitance C_oss — 448 — pF
Reverse Transfer Capacitance C_rss — 16 — pF
Gate Resistance R_g V_GS = 0V, V_DS = 0V, f = 1MHz — 2.3 — Ω
Switching Characteristics ^(7)
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time t_d(on) V_GS = 10V, V_DS = 100V — 17 — ns
Rise Time t_r I_D = 80A, R_GEN = 3.0Ω — 24 — ns
Turn-Off Delay Time t_d(off) — 60 — ns
Fall Time t_f — 33 — ns
Gate Charge Characteristics ^(7)
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (V_GS = 10V) Q_g V_DS = 100V, I_D = 80A — 88 — nC
Total Gate Charge (V_GS = 7.0V) Q_g — 66 — nC
Gate-Source Charge Q_gs V_GS = 10V — 28 — nC
Gate-Drain Charge Q_gd — 23 — nC
Gate Plateau Voltage V_plateau — 5.0 — V
Drain-Source Diode Characteristics ^(7)
Parameter Symbol Test Condition Min Typ Max Unit
Body Diode Reverse Recovery Time t_rr I_S = 80A, di/dt = 100A/µs — 191 — ns
Body Diode Reverse Recovery Charge Q_rr T_J = 25°C — 689 — nC
Diode Forward Current I_S T_A = 25°C — — 182 A

Notes:

  1. This current is chip limited, which is calculated based on RθJC.
  2. This current is calculated on single pulse with 10µs Single Pulse.
  3. Defined by design, not subject to production test. E_AS condition, T_J=25°C, V_DS=100V, V_GS=10V, L=1.0mH.
  4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  5. Thermal resistance from junction to the exposed pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design; not subject to production.
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