Specifications
- Package
- PDFN5060-8L
- Configuration
- N
- VDS_Max
- 120 V
- ID
- 88 A
- RDS(ON)_Max @VGS=10V
- 6.6 mΩ
- Automotive (Y/N)
- N
- VGS(th)_Typ
- 1.7 V
- RDS(ON)_Typ @VGS=10V
- 5.5 mΩ
- RDS(ON)_Typ @VGS=4.5V
- 7.2 mΩ
- RDS(ON)_Max @VGS=4.5V
- 9 mΩ
- VGS_Max
- ±20 V
- Tj
- 150 °C
- EAS_Max
- 336 mJ
- Ciss_Typ
- 1887 pF
- Coss_Typ
- 928 pF
- Crss_Typ
- 13 pF
- Qg_Typ
- 31 nC
- ESD
- No
- MPQ
- 5000 pcs
- MOQ
- 50000 pcs
- App: HF Power
- Y
- App: Battery Protection
- Y
- App: General Switch
- Y
Not sure how to choose? Read the LV & MV MOSFETs Selection Guide →
Package & Schematic
Package outline · Pin configuration · Schematic (from SineSemi official datasheet)Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SMT12T07ALP
120V N-Channel Power MOSFET
Product Summary
| VDS |
RDS(ON), max |
ID, max |
| 120 V |
9.6 mΩ @ VGS = 10V |
88 A |
|
9.0 mΩ @ VGS = 4.5V |
|
PDFN5060-8L
Features
- Low On-Resistance
- Excellent FoM (figure of merit)
- 100% UIS and Rg tested
- RoHS compliant, HALOGEN FREE
Ordering Information
| Orderable Part Number |
Package Type |
Device Marking |
Form |
Quantity (pcs) |
| SMT12T07ALP |
PDFN5060-8L |
12T07AL |
13" Tape&Reel |
5,000 |
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Value |
Unit |
| Drain - Source Voltage |
VDS |
120 |
V |
| Gate - Source Voltage |
VGS |
±20 |
V |
| Continuous Drain Current (VGS = 10V) (1) |
ID |
TA = 25°C: 88 |
A |
|
|
TA = 100°C: 56 |
A |
| Pulsed Drain Current (2) |
IDM |
351 |
A |
| Single Pulse Avalanche Energy (3) |
EAS |
336 |
mJ |
| Single Pulse Avalanche Current (L = 0.1mH) |
IAS |
45 |
A |
| Power Dissipation |
PD |
TA = 25°C: 96 |
W |
|
|
TA = 100°C: 38 |
W |
| Junction & Storage Temperature Range |
TJ, TSTG |
-55 ~ +150 |
°C |
Thermal Characteristics
| Parameter |
Symbol |
Typ |
Max |
Unit |
| Thermal Resistance, Junction-to-Ambient (4) |
R_θJA |
35 |
43 |
°C/W |
| Thermal Resistance, Junction-to-Case (5) |
R_θJC |
1.0 |
1.3 |
°C/W |
Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)
Off Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Drain-Source Breakdown Voltage |
V(BR)DSS |
VGS = 0V, ID = 250µA |
120 |
— |
— |
V |
| Zero Gate Voltage Drain Current |
IDSS |
VDS = 120V, VGS = 0V |
— |
— |
1.0 |
µA |
|
|
TJ = 125°C |
— |
— |
100 |
µA |
| Gate-Source Leakage Current |
IGSS |
VGS = ±20V, VDS = 0V |
— |
— |
±100 |
nA |
On Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Gate Threshold Voltage |
VGS(th) |
VDS = VGS, ID = 250µA |
1.2 |
1.7 |
2.5 |
V |
| Static Drain-Source On-Resistance |
RDS(on) |
VGS = 10V, ID = 25A |
— |
5.5 |
6.6 |
mΩ |
|
|
VGS = 4.5V, ID = 15A |
— |
7.2 |
9.0 |
mΩ |
| Forward Transconductance |
gfs |
VDS = 5.0V, ID = 20A |
— |
42 |
— |
S |
| Diodes Forward Voltage |
VSD |
IS = 2.0A, VGS = 0V |
— |
0.7 |
1.2 |
V |
Dynamic Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Input Capacitance |
Ciss |
VDS = 60V, VGS = 0V, f = 1MHz |
— |
1887 |
— |
pF |
| Output Capacitance |
Coss |
|
— |
928 |
— |
pF |
| Reverse Transfer Capacitance |
Crss |
|
— |
13 |
— |
pF |
| Gate Resistance |
Rg |
VGS = 0V, VDS = 0V, f = 1MHz |
— |
1.0 |
— |
Ω |
Switching Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Turn-On Delay Time |
td(on) |
VGS = 10V, VDS = 60V |
— |
5.4 |
— |
ns |
| Rise Time |
tr |
ID = 20A, RGEN = 3.0Ω |
— |
4.5 |
— |
ns |
| Turn-Off Delay Time |
td(off) |
|
— |
25 |
— |
ns |
| Fall Time |
tf |
|
— |
13 |
— |
ns |
Gate Charge Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Total Gate Charge (VGS = 10V) |
Qg |
VDS = 60V, ID = 25A |
— |
31 |
— |
nC |
| Total Gate Charge (VGS = 4.5V) |
Qg |
|
— |
16.2 |
— |
nC |
| Gate-Source Charge |
Qgs |
VGS = 10V |
— |
5.2 |
— |
nC |
| Gate-Drain Charge |
Qgd |
|
— |
7.2 |
— |
nC |
| Gate Plateau Voltage |
Vplateau |
|
— |
3.1 |
— |
V |
Drain-Source Diode Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Body Diode Reverse Recovery Time |
trr |
IS = 20A, di/dt = 100A/µs |
— |
57 |
— |
ns |
| Body Diode Reverse Recovery Charge |
Qrr |
TJ = 25°C |
— |
105 |
— |
nC |
| Diode Forward Current |
IS |
TA = 25°C |
— |
— |
88 |
A |
Notes:
- This current is chip limited, which is calculated based on RθJC.
- This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
- Defined by design, not subject to production test. EAS condition, TJ=25°C, VDS=60V, VGS=10V, L=1.0mH.
- Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
- Thermal resistance from junction to soldering point (on the exposed drain pad).
- Short duration pulse test used to minimize self-heating effect.
- Defined by design; not subject to production.
