SMT11T03AHS product image

Product Detail

SMT11T03AHS

SineSemi 中晶新源Core Authorized Distributor

LV & MV MOSFETsTO220-3L
Download Datasheet

Specifications

Package
TO220-3L
Configuration
N
VDS_Max
100 V
ID
208 A
RDS(ON)_Max @VGS=10V
3.7 mΩ
Automotive (Y/N)
N
VGS(th)_Typ
3 V
RDS(ON)_Typ @VGS=10V
3.1 mΩ
VGS_Max
±20 V
Tj
150 °C
EAS_Max
810 mJ
Ciss_Typ
4954 pF
Coss_Typ
1203 pF
Crss_Typ
40 pF
Qg_Typ
73 nC
ESD
No
MPQ
1000 pcs
MOQ
5000 pcs
App: Motor Drive
Y
App: HF Power
Y
App: Battery Protection
Y
App: General Switch
Y

Not sure how to choose? Read the LV & MV MOSFETs Selection Guide →

Package & Schematic

SMT11T03AHS package outline, pin configuration and schematic
Package outline · Pin configuration · Schematic (from SineSemi official datasheet)

Online Datasheet

Compiled from the manufacturer's datasheet; the official document prevails.

SMT11T03AHS

110V N-Channel Power MOSFET

Product Summary
VDS RDS(ON), max ID, max
110 V 3.7 mΩ @ VGS = 10V 208 A

TO220-3L

Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS 110 V
Gate - Source Voltage VGS ±20 V
Continuous Drain Current (VGS = 10V) (1) ID TC = 25°C: 208 A
TC = 100°C: 131 A
Pulsed Drain Current (2) IDM 808 A
Single Pulse Avalanche Energy (3) EAS 810 mJ
Single Pulse Avalanche Current (L = 0.1mH) IAS 48 A
Power Dissipation PD TC = 25°C: 278 W
TC = 100°C: 111 W
Junction & Storage Temperature Range TJ, TSTG -55~+150 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 30 35 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC 0.45 0.59 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 110 — — V
Zero Gate Voltage Drain Current IDSS VDS = 110V, VGS = 0V — — 1.0 µA
TJ = 125°C — — 100 µA
Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V — — ±100 nA
On Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA 2.0 3.0 4.0 V
Static Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 20A — 3.1 3.7 mΩ
Forward Transconductance gfs VDS = 5.0V, ID = 20A — 48 — S
Diodes Forward Voltage VSD IS = 2.0A, VGS = 0V — 0.7 1.2 V
Dynamic Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance Ciss VDS = 55V, VGS = 0V, f = 1MHz — 4954 — pF
Output Capacitance Coss — 1203 — pF
Reverse Transfer Capacitance Crss — 40 — pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 1.6 — Ω
Switching Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time td(on) VGS = 10V, VDS = 55V — 11 — ns
Rise Time tr ID = 20A, RGEN = 3.0 — 25 — ns
Turn-Off Delay Time td(off) — 37 — ns
Fall Time tf — 23 — ns
Gate Charge Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (VGS = 10V) Qg VDS = 50V, ID = 20A — 73 — nC
Gate-Source Charge Qgs — 23 — nC
Gate-Drain Charge Qgd — 17 — nC
Gate Plateau Voltage Vplateau — 5.1 — V
Drain-Source Diode Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Body Diode Reverse Recovery Time trr IS = 20A, di/dt = 100 A/µs — 52 — ns
Body Diode Reverse Recovery Charge Qrr TJ = 25°C — 71 — nC
Diode Forward Current IS TC = 25°C — — 208 A

Notes:

  1. This current is chip limited, which is calculated based on Rthjc.
  2. This current is calculated on single pulse with 10us Single Pulse.
  3. Defined by design, not subject to production test, EAS condition: TJ=25°C, VDD=55V, VGS=10V, L=1.0mH.
  4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  5. Thermal resistance from junction to the exposed pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design, not subject to production.
SMT10T03EHSCrss_Typ50 pFID211 ASMT10T02BHSCrss_Typ49 pFID205 ASMT10T02CHSCrss_Typ59 pFID225 ASMT10T03AHSCrss_Typ20 pFID186 ASMT10T03DHSCrss_Typ18 pFID184 ASMT10T03DHSSCrss_Typ19 pFID184 A