Product Detail

SMT10T130ALMK

SineSemi 中晶新源Core Authorized Distributor

LV & MV MOSFETsSOT-23

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Specifications

Package: SOT-23
Configuration: N
VDS_Max: 100 V
ID: 2 A
RDS(ON)_Max @VGS=10V: 135 mΩ
Automotive (Y/N): N
VGS(th)_Typ: 1.8 V
RDS(ON)_Typ @VGS=10V: 112 mΩ
RDS(ON)_Typ @VGS=4.5V: 140 mΩ
RDS(ON)_Max @VGS=4.5V: 175 mΩ
VGS_Max: ±20 V
Tj: 150 °C
Ciss_Typ: 56 pF
Coss_Typ: 40 pF
Crss_Typ: 5.3 pF
Qg_Typ: 2.3 nC
ESD: Yes
MPQ: 3000 pcs
MOQ: 30000 pcs
App: General Switch: Y

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Package & Schematic

SMT10T130ALMK package outline, pin configuration and schematic — Package outline · Pin configuration · Schematic (from SineSemi official datasheet)

Online Datasheet

Compiled from the manufacturer's datasheet; the official document prevails.

SMT10T130ALMK

100V N-Channel Enhancement Mode Power MOSFET

Product Summary

V_DS	R_DS(ON), max	I_D, max
100 V	135 mΩ @ V_GS = 10V	2.0 A
	175 mΩ @ V_GS = 4.5V

SOT-23

Maximum Ratings (@ T_C = 25°C, unless otherwise specified.)

Parameter	Symbol	Value	Unit
Drain - Source Voltage	V_DS	100	V
Gate - Source Voltage	V_GS	±20	V
Continuous Drain Current (V_GS = 10V) ⁽¹⁾	I_D	T_C = 25°C: 2.0	A
		T_C = 100°C: 1.6	A
Pulsed Drain Current ⁽²⁾	I_DM	7.9	A
Single Pulse Avalanche Energy ⁽³⁾	E_AS	—	mJ
Single Pulse Avalanche Current (L = 0.1mH)	I_AS	—	A
Power Dissipation	P_D	T_C = 25°C: 0.96	W
		T_C = 100°C: 0.62	W
Junction & Storage Temperature Range	T_J, T_STG	-55~+150	°C

Thermal Characteristics

Parameter	Symbol	Typ	Max	Unit
Thermal Resistance, Junction-to-Ambient ⁽⁴⁾	R_θJA	100	130	°C/W
Thermal Resistance, Junction-to-Case ⁽⁵⁾	R_θJC	—	—	°C/W

Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)

Off Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Drain-Source Breakdown Voltage	V_(BR)DSS	V_GS = 0V, I_D = 250µA	100	—	—	V
Zero Gate Voltage Drain Current	I_DSS	V_DS = 100V, V_GS = 0V	—	—	1.0	µA
		T_J = 125°C	—	—	100	µA
Gate-Source Leakage Current	I_GSS	V_GS = ±20V, V_DS = 0V	—	—	±10	nA

On Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Gate Threshold Voltage	V_GS(th)	V_GS = V_DS, I_D = 250µA	1.2	1.8	2.5	V
Static Drain-Source On-Resistance	R_DS(on)	V_GS = 10V, I_D = 2.0A	—	112	135	mΩ
		V_GS = 4.5V, I_D = 1.0A	—	140	175	mΩ
Forward Transconductance	g_fs	V_DS = 5.0V, I_D = 2.0A	—	4.8	—	S
Diodes Forward Voltage	V_SD	I_S = 2.0A, V_GS = 0V	—	0.86	1.2	V

Dynamic Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Input Capacitance	C_iss	V_DS = 50V, V_GS = 0V, f = 1MHz	—	56	—	pF
Output Capacitance	C_oss		—	40	—	pF
Reverse Transfer Capacitance	C_rss		—	5.3	—	pF
Gate Resistance	R_g	V_GS = 0V, V_DS = 0V, f = 1MHz	—	44	—	Ω

Switching Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Turn-On Delay Time	t_d(on)	V_GS = 10V, V_DS = 50V	—	0.92	—	ns
Rise Time	t_r	I_D = 2.0A, R_GEN = 3.0Ω	—	2.7	—	ns
Turn-Off Delay Time	t_d(off)		—	5.3	—	ns
Fall Time	t_f		—	2.0	—	ns

Gate Charge Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Total Gate Charge (V_GS = 10V)	Q_g	V_DS = 50V, I_D = 20A	—	2.3	—	nC
Total Gate Charge (V_GS = 4.5V)	Q_g		—	1.3	—	nC
Gate-Source Charge	Q_gs		—	0.33	—	nC
Gate-Drain Charge	Q_gd		—	0.67	—	nC
Gate Plateau Voltage	V_plateau		—	3.0	—	V

Drain-Source Diode Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Body Diode Reverse Recovery Time	t_rr	I_S = 2.0A, di/dt = 100 A/µs	—	21	—	ns
Body Diode Reverse Recovery Charge	Q_rr	T_J = 25°C	—	14	—	nC
Diode Forward Current	I_S	T_C = 25°C	—	—	2.0	A

Notes:

This current is chip limited, which is calculated based on Rthjc.
This current is calculated on single pulse with 10μs Pulse & Duty Cycle = 1%.
Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
Short duration pulse test used to minimize self-heating effect.
Defined by design, not subject to production.