Product Detail
SMT10T08AHU
SineSemi 中晶新源Core Authorized Distributor
Specifications
- Package
- TO252-3L
- Configuration
- N
- VDS_Max
- 100 V
- ID
- 39 A
- RDS(ON)_Max @VGS=10V
- 9.7 mΩ
- Automotive (Y/N)
- N
- VGS(th)_Typ
- 3 V
- RDS(ON)_Typ @VGS=10V
- 8.1 mΩ
- VGS_Max
- ±20 V
- Tj
- 150 °C
- EAS_Max
- 194 mJ
- Ciss_Typ
- 1345 pF
- Coss_Typ
- 607 pF
- Crss_Typ
- 11.5 pF
- Qg_Typ
- 20 nC
- ESD
- No
- MPQ
- 2500 pcs
- MOQ
- 25000 pcs
- App: Motor Drive
- Y
- App: HF Power
- Y
- App: General Switch
- Y
Not sure how to choose? Read the LV & MV MOSFETs Selection Guide →
Package & Schematic
Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SMT10T08AHU
100V N-Channel Power MOSFET
Features
- Low On-Resistance
- Excellent FoM (figure of merit)
- 100% ΔVDS & UIS & Rg Tested
Applications
- Motor controls
- DC/DC in Telecoms and Industries
- High frequency switching, synchronous rectification
Mechanical Data
- Green Molding Compound
- Moisture Sensitivity: Level 3 per J-STD-020
- UL Flammability Classification Rating 94V-0
Product Summary
| VDS | RDS(ON)_TYP | I_D_MAX |
|---|---|---|
| 100 V | 8.1 mΩ @VGS = 10V | 39 A |
TO252-3L
Ordering Information
| Orderable Part Number | Package Type | Device Marking | Form | Quantity (pcs) |
|---|---|---|---|---|
| SMT10T08AHU | TO252-3L | 10T08AH | 13" Tape&Reel | 2,500 |
Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain - Source Voltage | VDS | 100 | V |
| Gate - Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (VGS = 10V) (1) | ID @ TC = 25°C | 62 | A |
| ID @ TC = 100°C | 39 | A | |
| Pulsed Drain Current (2) | IDM | 247 | A |
| Single Pulse Avalanche Energy (3) | EAS | 194 | mJ |
| Single Pulse Avalanche Current (L= 0.1mH) | IAS | 36 | A |
| Power Dissipation | PD @ TC = 25°C | 69 | W |
| PD @ TC = 100°C | 28 | W | |
| Junction & Storage Temperature Range | TJ, TSTG | -55 ~ +150 | °C |
Thermal Characteristics
| Parameter | Symbol | Typ. | Max. | Unit |
|---|---|---|---|---|
| Thermal Resistance, Junction-to-Ambient (4) | R_θJA | 30 | 38 | °C/W |
| Thermal Resistance, Junction-to-Case (5) | R_θJC | 1.4 | 1.8 | °C/W |
Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Off Characteristics (6) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 100 | — | — | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = 100V, VGS = 0V | — | — | 1.0 | µA |
| TJ = 125°C | — | — | 100 | µA | ||
| Gate-Source Leakage Current | IGSS | VGS = ±20V, VDS = 0V | — | — | ±100 | nA |
| On Characteristics (6) | ||||||
| Gate Threshold Voltage | VGS(th) | VGS = VDS, ID = 250µA | 2.0 | 3.0 | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 10V, ID = 20A | — | 8.1 | 9.7 | mΩ |
| Forward Transconductance | gfs | VDS = 5.0V, ID = 20A | — | 32 | — | S |
| Diodes Forward Voltage | VSD | IS = 2.0A, VGS = 0V | — | 0.7 | 1.2 | V |
| Dynamic Characteristics (7) | ||||||
| Input Capacitance | Ciss | VDS = 50V, VGS = 0V, f = 1MHz | — | 1345 | — | pF |
| Output Capacitance | Coss | — | 607 | — | pF | |
| Reverse Transfer Capacitance | Crss | — | 11.5 | — | pF | |
| Gate Resistance | Rg | VGS = 0V, VDS = 0V, f = 1MHz | — | 1.5 | — | Ω |
| Switching Characteristics (7) | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 50V | — | 6.9 | — | ns |
| Rise Time | tr | ID = 20A, RGEN = 3.0Ω | — | 4.5 | — | ns |
| Turn-Off Delay Time | td(off) | — | 13 | — | ns | |
| Fall Time | tf | — | 6.3 | — | ns | |
| Gate Charge Characteristics (7) | ||||||
| Total Gate Charge (VGS = 10V) | Qg | VDS = 50V, ID = 20A | — | 20 | — | nC |
| Total Gate Charge (VGS = 6.0V) | Qg | VGS = 10V | — | 12.8 | — | nC |
| Gate-Source Charge | Qgs | — | 6.1 | — | nC | |
| Gate-Drain Charge | Qgd | — | 4.2 | — | nC | |
| Gate Plateau Voltage | Vplateau | — | 4.7 | — | V | |
| Drain-Source Diode Characteristics (7) | ||||||
| Body Diode Reverse Recovery Time | trr | IF = 20A, dI/dt = 100A/µs, TJ = 25°C | — | 46 | — | ns |
| Body Diode Reverse Recovery Charge | Qrr | — | 71 | — | nC | |
| Diode Forward Current | IS | TC = 25°C | — | — | 62 | A |
Notes:
- This current is chip limited, which is calculated based on Rthjc.
- This current is calculated on single pulse with 10µs Single Pulse.
- Defined by design, not subject to production test, EAS condition: TJ=25°C, VDD=50V, VGS=10V, L=1.0mH.
- Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
- Thermal resistance from junction to the exposed pad.
- Short duration pulse test used to minimize self-heating effect.
- Defined by design, not subject to production.
Typical Electrical and Thermal Characteristics
- Figure 1: Output Characteristics（曲线图略）
- Figure 2: Transfer Characteristics（曲线图略）
- Figure 3: On-Resistance vs. Gate-Source Voltage（曲线图略）
- Figure 4: On-Resistance vs. Drain Current and Gate Voltage（曲线图略）
- Figure 5: On-Resistance vs. Junction Temperature（曲线图略）
- Figure 6: Source-Drain Diode Forward Voltage（曲线图略）
- Figure 7: Gate Threshold Variation vs. Junction Temperature（曲线图略）
- Figure 8: Gate Charge Characteristics（曲线图略）
- Figure 9: Capacitance Characteristics（曲线图略）
- Figure 10: Power Derating（曲线图略）
- Figure 11: Current Derating（曲线图略）
- Figure 12: Safe Operating Area（曲线图略）
- Figure 13: Normalized Maximum Transient Thermal Impedance（曲线图略）
Figure 13 注：δ = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse；1. Duty cycle δ = t1 / t2；2. R_θJC(t) = r(t) × R_θJC
TO252-3L Package Outline
Package Outline Notes:
- DIMENSIONING AND TOLERANCING PER ASME Y14.5M,1994.
- ALL DIMENSIONS IN MILLIMETER (ANGLE IN DEGREE).
- DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.
| DIM. | MIN. | NOM. | MAX. |
|---|---|---|---|
| A | 2.20 | 2.30 | 2.40 |
| A1 | 0 | — | 0.13 |
| b | 0.62 | 0.76 | 0.90 |
| c | 0.40 | 0.50 | 0.61 |
| c1 | 0.46 | 0.50 | 0.58 |
| D | 5.90 | 6.10 | 6.30 |
| D1 | 5.05 | — | — |
| E | 6.35 | 6.60 | 6.80 |
| E1 | 4.32 | — | — |
| b3 | 5.21 | 5.38 | 5.55 |
| e | 2.29 BSC | ||
| H | 9.40 | 10.00 | 10.40 |
| L | 0.89 | — | 1.27 |
| L2 | 1.40 | 1.78 | |
| V1 | 7° REF | ||
| V2 | 0° | — | 6° |
单位：MILLIMETER（角度：DEGREE）
Recommend Soldering Footprint（尺寸单位：MILLIMETERS）
| 尺寸 | 值 |
|---|---|
| 总长 | 11.350 |
| 总宽 | 6.250 |
| 右侧焊盘宽 | 6.700 |
| 引脚间距区宽 | 2.800 |
| 引脚中心间距 | 4.572 |
| 引脚焊盘长 | 1.500 |