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SMT10T08AHU

中晶新源 SineSemi核心代理商

中低压 MOSFETTO252-3L
规格书下载

参数规格

封装
TO252-3L
结构
N
漏源电压 VDS
100 V
漏极电流 ID
39 A
导通电阻 RDS(ON)@10V 最大
9.7 mΩ
车规 (Y/N)
N
阈值电压 VGS(th) 典型
3 V
导通电阻 RDS(ON)@10V 典型
8.1 mΩ
栅源电压 VGS 最大
±20 V
结温 Tj
150 °C
雪崩能量 EAS 最大
194 mJ
输入电容 Ciss 典型
1345 pF
输出电容 Coss 典型
607 pF
反向传输电容 Crss 典型
11.5 pF
总栅极电荷 Qg 典型
20 nC
ESD
No
最小包装量
2500 pcs
最小订购量
25000 pcs
应用推荐-马达驱动
Y
应用推荐-高频电源
Y
应用推荐-通用开关
Y

不确定怎么选？阅读《中低压 MOSFET 选型指南》 →

封装与电路符号

SMT10T08AHU 封装外形、引脚配置与电路符号图
封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet）

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMT10T08AHU

100V N-Channel Power MOSFET

Features
  • Low On-Resistance
  • Excellent FoM (figure of merit)
  • 100% ΔVDS & UIS & Rg Tested
Applications
  • Motor controls
  • DC/DC in Telecoms and Industries
  • High frequency switching, synchronous rectification
Mechanical Data
  • Green Molding Compound
  • Moisture Sensitivity: Level 3 per J-STD-020
  • UL Flammability Classification Rating 94V-0
Product Summary
VDS RDS(ON)_TYP I_D_MAX
100 V 8.1 mΩ @VGS = 10V 39 A

TO252-3L

Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMT10T08AHU TO252-3L 10T08AH 13" Tape&Reel 2,500
Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS 100 V
Gate - Source Voltage VGS ±20 V
Continuous Drain Current (VGS = 10V) (1) ID @ TC = 25°C 62 A
ID @ TC = 100°C 39 A
Pulsed Drain Current (2) IDM 247 A
Single Pulse Avalanche Energy (3) EAS 194 mJ
Single Pulse Avalanche Current (L= 0.1mH) IAS 36 A
Power Dissipation PD @ TC = 25°C 69 W
PD @ TC = 100°C 28 W
Junction & Storage Temperature Range TJ, TSTG -55 ~ +150 °C
Thermal Characteristics
Parameter Symbol Typ. Max. Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 30 38 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC 1.4 1.8 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Parameter Symbol Test Condition Min. Typ. Max. Unit
Off Characteristics (6)
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 100 — — V
Zero Gate Voltage Drain Current IDSS VDS = 100V, VGS = 0V — — 1.0 µA
TJ = 125°C — — 100 µA
Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V — — ±100 nA
On Characteristics (6)
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA 2.0 3.0 4.0 V
Static Drain-Source On-Resistance RDS(ON) VGS = 10V, ID = 20A — 8.1 9.7 mΩ
Forward Transconductance gfs VDS = 5.0V, ID = 20A — 32 — S
Diodes Forward Voltage VSD IS = 2.0A, VGS = 0V — 0.7 1.2 V
Dynamic Characteristics (7)
Input Capacitance Ciss VDS = 50V, VGS = 0V, f = 1MHz — 1345 — pF
Output Capacitance Coss — 607 — pF
Reverse Transfer Capacitance Crss — 11.5 — pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 1.5 — Ω
Switching Characteristics (7)
Turn-On Delay Time td(on) VGS = 10V, VDS = 50V — 6.9 — ns
Rise Time tr ID = 20A, RGEN = 3.0Ω — 4.5 — ns
Turn-Off Delay Time td(off) — 13 — ns
Fall Time tf — 6.3 — ns
Gate Charge Characteristics (7)
Total Gate Charge (VGS = 10V) Qg VDS = 50V, ID = 20A — 20 — nC
Total Gate Charge (VGS = 6.0V) Qg VGS = 10V — 12.8 — nC
Gate-Source Charge Qgs — 6.1 — nC
Gate-Drain Charge Qgd — 4.2 — nC
Gate Plateau Voltage Vplateau — 4.7 — V
Drain-Source Diode Characteristics (7)
Body Diode Reverse Recovery Time trr IF = 20A, dI/dt = 100A/µs, TJ = 25°C — 46 — ns
Body Diode Reverse Recovery Charge Qrr — 71 — nC
Diode Forward Current IS TC = 25°C — — 62 A

Notes:

  1. This current is chip limited, which is calculated based on Rthjc.
  2. This current is calculated on single pulse with 10µs Single Pulse.
  3. Defined by design, not subject to production test, EAS condition: TJ=25°C, VDD=50V, VGS=10V, L=1.0mH.
  4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  5. Thermal resistance from junction to the exposed pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design, not subject to production.

Typical Electrical and Thermal Characteristics

  • Figure 1: Output Characteristics（曲线图略）
  • Figure 2: Transfer Characteristics（曲线图略）
  • Figure 3: On-Resistance vs. Gate-Source Voltage（曲线图略）
  • Figure 4: On-Resistance vs. Drain Current and Gate Voltage（曲线图略）
  • Figure 5: On-Resistance vs. Junction Temperature（曲线图略）
  • Figure 6: Source-Drain Diode Forward Voltage（曲线图略）
  • Figure 7: Gate Threshold Variation vs. Junction Temperature（曲线图略）
  • Figure 8: Gate Charge Characteristics（曲线图略）
  • Figure 9: Capacitance Characteristics（曲线图略）
  • Figure 10: Power Derating（曲线图略）
  • Figure 11: Current Derating（曲线图略）
  • Figure 12: Safe Operating Area（曲线图略）
  • Figure 13: Normalized Maximum Transient Thermal Impedance（曲线图略）

Figure 13 注：δ = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse；1. Duty cycle δ = t1 / t2；2. R_θJC(t) = r(t) × R_θJC

TO252-3L Package Outline

Package Outline Notes:

  1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M,1994.
  2. ALL DIMENSIONS IN MILLIMETER (ANGLE IN DEGREE).
  3. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.
DIM. MIN. NOM. MAX.
A 2.20 2.30 2.40
A1 0 — 0.13
b 0.62 0.76 0.90
c 0.40 0.50 0.61
c1 0.46 0.50 0.58
D 5.90 6.10 6.30
D1 5.05 — —
E 6.35 6.60 6.80
E1 4.32 — —
b3 5.21 5.38 5.55
e 2.29 BSC
H 9.40 10.00 10.40
L 0.89 — 1.27
L2 1.40 1.78
V1 7° REF
V2 0° — 6°

单位：MILLIMETER（角度：DEGREE）

Recommend Soldering Footprint（尺寸单位：MILLIMETERS）

尺寸 值
总长 11.350
总宽 6.250
右侧焊盘宽 6.700
引脚间距区宽 2.800
引脚中心间距 4.572
引脚焊盘长 1.500
SMT10T15ALU漏极电流 ID43 A导通电阻 RDS(ON)@10V 最大15.4 mΩSMT10T20ALU漏极电流 ID32 A导通电阻 RDS(ON)@10V 最大20 mΩSMT10T20ALP漏极电流 ID39 A导通电阻 RDS(ON)@10V 最大18.6 mΩSMT10T20ALPQ漏极电流 ID40 A导通电阻 RDS(ON)@10V 最大18.6 mΩSMT10T10BLR漏极电流 ID42 A导通电阻 RDS(ON)@10V 最大10.9 mΩSMT10T15BLRQ漏极电流 ID35 A导通电阻 RDS(ON)@10V 最大15.9 mΩ