SMT10T01GHTL2 product image

Product Detail

SMT10T01GHTL2

SineSemi 中晶新源Core Authorized Distributor

LV & MV MOSFETsTOLL
Download Datasheet

Specifications

Package
TOLL
Configuration
N
VDS_Max
100 V
ID
344 A
RDS(ON)_Max @VGS=10V
1.7 mΩ
Automotive (Y/N)
N
VGS(th)_Typ
3 V
RDS(ON)_Typ @VGS=10V
1.5 mΩ
VGS_Max
±20 V
Tj
150 °C
EAS_Max
1960 mJ
Ciss_Typ
12577 pF
Coss_Typ
3472 pF
Crss_Typ
73 pF
Qg_Typ
144 nC
ESD
No
MPQ
2000 pcs
MOQ
20000 pcs
App: Motor Drive
Y
App: Battery Protection
Y
App: General Switch
Y

Package & Schematic

SMT10T01GHTL2 package outline, pin configuration and schematic
Package outline · Pin configuration · Schematic (from SineSemi official datasheet)

Online Datasheet

Compiled from the manufacturer's datasheet; the official document prevails.

SMT10T01GHTL2

100V N-Channel Power MOSFET

Product Summary
V_DS R_DS(ON), max I_D, max
100 V 1.7 mΩ @ V_GS = 10V 344 A

TOLL

Features
  • Low On-Resistance
  • Excellent FoM (figure of merit)
  • 100% ΔVDS & UIS & Rg Tested
Applications
  • BMS Apps
  • Motor Drives
  • High-Performance Power Supplies
Mechanical Data
  • Green Molding Compound
  • Moisture Sensitivity: Level 1 per J-STD-020
  • UL Flammability Classification Rating 94V-0
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMT10T01GHTL2 TOLL 10T01GH2 13'' Tape&Reel 2,000
Maximum Ratings (@ T_C = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage V_DS 100 V
Gate - Source Voltage V_GS ±20 V
Continuous Drain Current (V_GS = 10V) ^(1) I_D T_C = 25°C: 344 A
T_C = 100°C: 218 A
Pulsed Drain Current ^(2) I_DM 1323 A
Single Pulse Avalanche Energy ^(3) E_AS 1960 mJ
Single Pulse Avalanche Current (L = 0.1mH) I_AS 75 A
Power Dissipation ^(4) P_D T_C = 25°C: 357 W
T_C = 100°C: 143 W
Junction & Storage Temperature Range T_J, T_STG -55~+150 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient ^(4) R_θJA 23 29 °C/W
Thermal Resistance, Junction-to-Case ^(5) R_θJC 0.27 0.35 °C/W

Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)

Off Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V_(BR)DSS V_GS = 0V, I_D = 250µA 100 — — V
Zero Gate Voltage Drain Current I_DSS V_DS = 100V, V_GS = 0V — — 1.0 µA
Gate-Source Leakage Current I_GSS V_GS = ±20V, V_DS = 0V — — ±100 nA
On Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage V_GS(th) V_DS = V_GS, I_D = 250µA 2.0 3.0 4.0 V
Static Drain-Source On-Resistance R_DS(on) V_GS = 10V, I_D = 80A — 1.5 1.7 mΩ
Forward Transconductance g_fs V_DS = 5.0V, I_D = 20A — 78 — S
Diode Forward Voltage V_SD I_S = 2.0A, V_GS = 0V — 0.7 1.2 V
Dynamic Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance C_iss V_DS = 50V, V_GS = 0V, f = 1MHz — 12577 — pF
Output Capacitance C_oss — 3472 — pF
Reverse Transfer Capacitance C_rss — 73 — pF
Gate Resistance R_g V_GS = 0V, V_DS = 0V, f = 1MHz — 2.1 — Ω
Switching Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time t_d(on) V_GS = 10V, V_DS = 50V — 26 — ns
Rise Time t_r I_D = 80A, R_GEN = 3.0Ω — 39 — ns
Turn-Off Delay Time t_d(off) — 77 — ns
Fall Time t_f — 30 — ns
Gate Charge Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (V_GS = 10V) Q_g V_DS = 50V, I_D = 80A — 144 — nC
Total Gate Charge (V_GS = 70V) Q_g V_DS = 50V, I_D = 80A — 102 — nC
Gate-Source Charge Q_gs — 54 — nC
Gate-Drain Charge Q_gd — 16.8 — nC
Gate Plateau Voltage V_plateau — 4.8 — V
Drain-Source Diode Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Body Diode Reverse Recovery Time t_rr I_S = 80A, di/dt = 100A/µs — 87 — ns
Body Diode Reverse Recovery Charge Q_rr T_J = 25°C — 208 — nC
Diode Forward Current I_S T_C = 25°C — — 344 A

Notes:

  1. This current is chip limited, which is calculated based on Rthjc.
  2. This current is calculated on single pulse with 10us Single Pulse.
  3. Defined by design, not subject to production test, EAS condition: TJ=25°C, VDD=50V, VGS=10V, L=1.0mH.
  4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  5. Thermal resistance from junction to the exposed pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design, not subject to production.
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