Product Detail

SMT10T01AHTL

SineSemi 中晶新源Core Authorized Distributor

LV & MV MOSFETsTOLL

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Specifications

Package: TOLL
Configuration: N
VDS_Max: 100 V
ID: 385 A
RDS(ON)_Max @VGS=10V: 1.35 mΩ
Automotive (Y/N): N
VGS(th)_Typ: 3 V
RDS(ON)_Typ @VGS=10V: 1.15 mΩ
VGS_Max: ±20 V
Tj: 175 °C
EAS_Max: 2016 mJ
Ciss_Typ: 9660 pF
Coss_Typ: 3476 pF
Crss_Typ: 48 pF
Qg_Typ: 140 nC
ESD: No
MPQ: 2000 pcs
MOQ: 20000 pcs
App: Motor Drive: Y
App: HF Power: Y
App: General Switch: Y

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Package & Schematic

SMT10T01AHTL package outline, pin configuration and schematic — Package outline · Pin configuration · Schematic (from SineSemi official datasheet)

Online Datasheet

Compiled from the manufacturer's datasheet; the official document prevails.

SMT10T01AHTL

100V N-Channel Power MOSFET

Product Summary

V_DS	R_DS(ON), max	I_D, max
100 V	1.35 mΩ @ V_GS = 10V	385 A

TOLL

Features

Low On-Resistance
Excellent FoM (figure of merit)
100% ΔVDS & UIS & Rg Tested

Applications

DC/DC in Telecoms and Industrial
Synchronous Rectification in SMPS
Hard Switching and High Speed Circuit

Mechanical Data

Green Molding Compound
Moisture Sensitivity: Level 1 per J-STD-020
UL Flammability Classification Rating 94V-0

Ordering Information

Orderable Part Number	Package Type	Device Marking	Form	Quantity (pcs)
SMT10T01AHTL	TOLL	10T01AH	13'' Tape&Reel	2,000

Maximum Ratings (@ T_C = 25°C, unless otherwise specified.)

Parameter	Symbol	Value	Unit
Drain - Source Voltage	V_DS	100	V
Gate - Source Voltage	V_GS	±20	V
Continuous Drain Current (V_GS = 10V) ⁽¹⁾	I_D	T_C = 25°C: 385	A
		T_C = 100°C: 273	A
Pulsed Drain Current ⁽²⁾	I_DM	1316	A
Single Pulse Avalanche Energy ⁽³⁾	E_AS	2016	mJ
Single Pulse Avalanche Current (L = 0.1mH)	I_AS	74	A
Power Dissipation ⁽⁴⁾	P_D	T_C = 25°C: 429	W
		T_C = 100°C: 214	W
Junction & Storage Temperature Range	T_J, T_STG	-55~+175	°C

Thermal Characteristics

Parameter	Symbol	Typ	Max	Unit
Thermal Resistance, Junction-to-Ambient ⁽⁴⁾	R_θJA	23	29	°C/W
Thermal Resistance, Junction-to-Case ⁽⁵⁾	R_θJC	0.27	0.35	°C/W

Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)

Off Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Drain-Source Breakdown Voltage	V_(BR)DSS	V_GS = 0V, I_D = 250µA	100	—	—	V
Zero Gate Voltage Drain Current	I_DSS	V_DS = 100V, V_GS = 0V	—	—	1.0	µA
Gate-Source Leakage Current	I_GSS	V_GS = ±20V, V_DS = 0V	—	—	±100	nA

On Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Gate Threshold Voltage	V_GS(th)	V_DS = V_GS, I_D = 250µA	2.0	3.0	4.0	V
Static Drain-Source On-Resistance	R_DS(on)	V_GS = 10V, I_D = 20A	—	1.15	1.35	mΩ
Forward Transconductance	g_fs	V_DS = 5.0V, I_D = 20A	—	80	—	S
Diode Forward Voltage	V_SD	I_S = 2.0A, V_GS = 0V	—	0.7	1.2	V

Dynamic Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Input Capacitance	C_iss	V_DS = 50V, V_GS = 0V, f = 1MHz	—	9660	—	pF
Output Capacitance	C_oss		—	3476	—	pF
Reverse Transfer Capacitance	C_rss		—	48	—	pF
Gate Resistance	R_g	V_GS = 0V, V_DS = 0V, f = 1MHz	—	2.1	—	Ω

Switching Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Turn-On Delay Time	t_d(on)	V_GS = 10V, V_DS = 50V	—	25	—	ns
Rise Time	t_r	I_D = 20A, R_GEN = 3.0Ω	—	42	—	ns
Turn-Off Delay Time	t_d(off)		—	87	—	ns
Fall Time	t_f		—	63	—	ns

Gate Charge Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Total Gate Charge (V_GS = 10V)	Q_g	V_DS = 50V, I_D = 20A	—	140	—	nC
Total Gate Charge (V_GS = 6.0V)	Q_g	V_DS = 50V, I_D = 20A	—	88	—	nC
Gate-Source Charge	Q_gs		—	38	—	nC
Gate-Drain Charge	Q_gd		—	27	—	nC
Gate Plateau Voltage	V_plateau		—	4.2	—	V

Drain-Source Diode Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Body Diode Reverse Recovery Time	t_rr	I_S = 20A, di/dt = 100A/µs	—	105	—	ns
Body Diode Reverse Recovery Charge	Q_rr	T_J = 25°C	—	394	—	nC
Diode Forward Current	I_S	T_C = 25°C	—	—	385	A