Specifications
- Package
- SOT-23
- Configuration
- P
- VDS_Max
- -30 V
- ID
- -3.5 A
- RDS(ON)_Max @VGS=10V
- 58 mΩ
- Automotive (Y/N)
- N
- VGS(th)_Typ
- -1.6 V
- RDS(ON)_Typ @VGS=10V
- 48 mΩ
- RDS(ON)_Typ @VGS=4.5V
- 63 mΩ
- RDS(ON)_Max @VGS=4.5V
- 79 mΩ
- VGS_Max
- ±20 V
- Tj
- 150 °C
- Ciss_Typ
- 394 pF
- Coss_Typ
- 59 pF
- Crss_Typ
- 45 pF
- Qg_Typ
- 7.4 nC
- ESD
- Yes
- MPQ
- 3000 pcs
- MOQ
- 30000 pcs
- App: General Switch
- Y
Not sure how to choose? Read the LV & MV MOSFETs Selection Guide →
Package & Schematic
Package outline · Pin configuration · Schematic (from SineSemi official datasheet)Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SMP3407CLMK
-30V P-Channel Enhancement Mode Power MOSFET
Product Summary
| VDS |
RDS(ON), max |
ID, max |
| -30 V |
58 mΩ @ VGS = -10V |
-3.5 A |
|
79 mΩ @ VGS = -4.5V |
|
SOT-23
Features
- Fast Switching
- Low Gate Charge
- Low On-Resistance
- ESD Protected
Application
- Load Switch
- Motor Control
- Power Management
Ordering Information
| Orderable Part Number |
Package Type |
Device Marking |
Form |
Quantity (pcs) |
| SMP3407CLMK SOT-23 3407K 7" Tape&Reel 3,000 |
— |
— |
— |
— |
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Value |
Unit |
| Drain - Source Voltage |
VDS |
-30 |
V |
| Gate - Source Voltage |
VGS |
±20 |
V |
| Continuous Drain Current (VGS = -10V) (1) |
ID |
TA = 25°C: -3.5 |
A |
| Pulsed Drain Current (2) |
IDM |
-14 |
A |
| Power Dissipation |
PD |
TA = 25°C: 1.1 |
W |
| Junction & Storage Temperature Range |
TJ, TSTG |
-55 ~ +150 |
°C |
Thermal Characteristics
| Parameter |
Symbol |
Typ |
Max |
Unit |
| Thermal Resistance, Junction-to-Ambient (4) |
R_θJA |
90 |
115 |
°C/W |
| Thermal Resistance, Junction-to-Case (5) |
R_θJC |
— |
— |
°C/W |
Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)
Off Characteristics (6)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Drain-Source Breakdown Voltage |
V(BR)DSS |
VGS = 0V, ID = -250µA |
-30 |
— |
— |
V |
| Zero Gate Voltage Drain Current |
IDSS |
VDS = -30V, VGS = 0V |
— |
— |
-1.0 |
µA |
|
|
TJ = 125°C |
— |
— |
-100 |
µA |
| Gate-Source Leakage Current |
IGSS |
VGS = ±20V, VDS = 0V |
— |
— |
±10 |
nA |
On Characteristics (6)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Gate Threshold Voltage |
VGS(th) |
VDS = VGS, ID = -250µA |
-1.0 |
-1.6 |
-2.2 |
V |
| Static Drain-Source On-Resistance |
RDS(on) |
VGS = -10V, ID = -3.0A |
— |
48 |
58 |
mΩ |
|
|
VGS = -4.5V, ID = -2.0A |
— |
63 |
79 |
mΩ |
| Forward Transconductance |
gfs |
VDS = -5.0V, ID = -3.0A |
— |
13.0 |
— |
S |
| Diodes Forward Voltage |
VSD |
IS = -2.0A, VGS = 0V |
— |
-0.80 |
-1.2 |
V |
Dynamic Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Input Capacitance |
Ciss |
VDS = -15V, VGS = 0V, f = 1MHz |
— |
394 |
— |
pF |
| Output Capacitance |
Coss |
|
— |
59 |
— |
pF |
| Reverse Transfer Capacitance |
Crss |
|
— |
45 |
— |
pF |
| Gate Resistance |
Rg |
VGS = 0V, VDS = 0V, f = 1MHz |
— |
15 |
— |
Ω |
Switching Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Turn-On Delay Time |
td(on) |
VGS = -10V, VDS = -15V |
— |
3.6 |
— |
ns |
| Rise Time |
tr |
ID = -3.0A, RGEN = 3.0Ω |
— |
9.3 |
— |
ns |
| Turn-Off Delay Time |
td(off) |
|
— |
17 |
— |
ns |
| Fall Time |
tf |
|
— |
10 |
— |
ns |
Gate Charge Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Total Gate Charge (VGS = -10V) |
Qg |
VDS = -15V, ID = -3.0A |
— |
7.4 |
— |
nC |
| Total Gate Charge (VGS = -4.5V) |
Qg |
|
— |
3.5 |
— |
nC |
| Gate-Source Charge |
Qgs |
VGS = -10V |
— |
1.1 |
— |
nC |
| Gate-Drain Charge |
Qgd |
|
— |
1.3 |
— |
nC |
| Gate Plateau Voltage |
Vplateau |
|
— |
-2.9 |
— |
V |
Drain-Source Diode Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Diode Forward Current |
IS |
TA = 25°C |
— |
— |
-3.5 |
A |
Notes:
- This current is chip limited, which is calculated based on RθJC.
- This current is calculated on single pulse with 10µs Pulse.
- Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
- Thermal resistance from junction to the exposed pad.
- Short duration pulse test used to minimize self-heating effect.
- Defined by design, not subject to production.
