SMP3407CLMK 产品图

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SMP3407CLMK

中晶新源 SineSemi核心代理商

中低压 MOSFETSOT-23
规格书下载

参数规格

封装
SOT-23
结构
P
漏源电压 VDS
-30 V
漏极电流 ID
-3.5 A
导通电阻 RDS(ON)@10V 最大
58 mΩ
车规 (Y/N)
N
阈值电压 VGS(th) 典型
-1.6 V
导通电阻 RDS(ON)@10V 典型
48 mΩ
导通电阻 RDS(ON)@4.5V 典型
63 mΩ
导通电阻 RDS(ON)@4.5V 最大
79 mΩ
栅源电压 VGS 最大
±20 V
结温 Tj
150 °C
输入电容 Ciss 典型
394 pF
输出电容 Coss 典型
59 pF
反向传输电容 Crss 典型
45 pF
总栅极电荷 Qg 典型
7.4 nC
ESD
Yes
最小包装量
3000 pcs
最小订购量
30000 pcs
应用推荐-通用开关
Y

封装与电路符号

SMP3407CLMK 封装外形、引脚配置与电路符号图
封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet）

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMP3407CLMK

-30V P-Channel Enhancement Mode Power MOSFET

Product Summary
V_DS R_DS(ON), max I_D, max
-30 V 58 mΩ @ V_GS = -10V -3.5 A
79 mΩ @ V_GS = -4.5V

SOT-23

Features
  • Fast Switching
  • Low Gate Charge
  • Low On-Resistance
  • ESD Protected
Application
  • Load Switch
  • Motor Control
  • Power Management
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMP3407CLMK SOT-23 3407K 7" Tape&Reel 3,000 — — — —
Maximum Ratings (@ T_A = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage V_DS -30 V
Gate - Source Voltage V_GS ±20 V
Continuous Drain Current (V_GS = -10V) ^(1) I_D T_A = 25°C: -3.5 A
Pulsed Drain Current ^(2) I_DM -14 A
Power Dissipation P_D T_A = 25°C: 1.1 W
Junction & Storage Temperature Range T_J, T_STG -55 ~ +150 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient ^(4) R_θJA 90 115 °C/W
Thermal Resistance, Junction-to-Case ^(5) R_θJC — — °C/W

Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)

Off Characteristics ^(6)
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V_(BR)DSS V_GS = 0V, I_D = -250µA -30 — — V
Zero Gate Voltage Drain Current I_DSS V_DS = -30V, V_GS = 0V — — -1.0 µA
T_J = 125°C — — -100 µA
Gate-Source Leakage Current I_GSS V_GS = ±20V, V_DS = 0V — — ±10 nA
On Characteristics ^(6)
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage V_GS(th) V_DS = V_GS, I_D = -250µA -1.0 -1.6 -2.2 V
Static Drain-Source On-Resistance R_DS(on) V_GS = -10V, I_D = -3.0A — 48 58 mΩ
V_GS = -4.5V, I_D = -2.0A — 63 79 mΩ
Forward Transconductance g_fs V_DS = -5.0V, I_D = -3.0A — 13.0 — S
Diodes Forward Voltage V_SD I_S = -2.0A, V_GS = 0V — -0.80 -1.2 V
Dynamic Characteristics ^(7)
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance C_iss V_DS = -15V, V_GS = 0V, f = 1MHz — 394 — pF
Output Capacitance C_oss — 59 — pF
Reverse Transfer Capacitance C_rss — 45 — pF
Gate Resistance R_g V_GS = 0V, V_DS = 0V, f = 1MHz — 15 — Ω
Switching Characteristics ^(7)
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time t_d(on) V_GS = -10V, V_DS = -15V — 3.6 — ns
Rise Time t_r I_D = -3.0A, R_GEN = 3.0Ω — 9.3 — ns
Turn-Off Delay Time t_d(off) — 17 — ns
Fall Time t_f — 10 — ns
Gate Charge Characteristics ^(7)
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (V_GS = -10V) Q_g V_DS = -15V, I_D = -3.0A — 7.4 — nC
Total Gate Charge (V_GS = -4.5V) Q_g — 3.5 — nC
Gate-Source Charge Q_gs V_GS = -10V — 1.1 — nC
Gate-Drain Charge Q_gd — 1.3 — nC
Gate Plateau Voltage V_plateau — -2.9 — V
Drain-Source Diode Characteristics ^(7)
Parameter Symbol Test Condition Min Typ Max Unit
Diode Forward Current I_S T_A = 25°C — — -3.5 A

Notes:

  1. This current is chip limited, which is calculated based on RθJC.
  2. This current is calculated on single pulse with 10µs Pulse.
  3. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  4. Thermal resistance from junction to the exposed pad.
  5. Short duration pulse test used to minimize self-heating effect.
  6. Defined by design, not subject to production.
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