Specifications
- Package
- TO220F-3L
- VCE_Max
- 650 V
- IC
- 18 A
- VCE(sat)_Max
- 1.52 V
- Product Type
- RC-IGBT
- Tj
- 175 °C
- Application Level
- Consumer
- IC_Max @100°C
- 12 A
- Switching Frequency
- 5 ~ 15 kHz
- ICP
- 45 A
- EON
- 0.73 mJ
- EOFF
- 0.28 mJ
- IF_Max @25°C
- 18 A
- Qrr
- 1.89 mC
- TD(ON)
- 8 ns
- Tr
- 30 ns
- TD(OFF)
- 67 ns
- Tf
- 63 ns
- Qg
- 54 nC
- IF,pulse
- 45 A
- Forward Voltage Drop VF
- 1.28 V
- IRRM
- 24.6 A
Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SRG015M065AF
650V / 15A IGBT
Features
- High Input Impedance
- Low Saturation Voltage V_CE(SAT)
- Low Switching Losses
Benefits
- Low Conduction for a High Efficiency
- Rugged Transient Reliability
- Low EMI
Applications
- Industrial Sewing Machine
- Inverter
Key Performance and Package Parameters
| Type |
V_CE |
I_C |
V_CE(SAT) (T_vj = 25°C, I_C = 15 A, V_GE = 15 V) |
T_vjmax |
Package |
| IGBT |
650 V |
15A |
1.51 V |
175°C |
TO220F-3L |
Absolute Maximum Ratings
| Parameter |
Symbol |
Conditions |
Value |
Unit |
| Collector emitter voltage |
V_CE |
T_vj = 25 °C |
650 |
V |
| DC collector current |
I_C |
T_C = 25 °C |
18 |
A |
|
|
T_C = 100 °C |
11.5 |
A |
| Pulsed collector current (tp limited by T_vjmax) |
I_Cpuls |
|
45 |
A |
| Maximum Diode forward current |
I_F |
T_C = 25 °C |
18 |
A |
|
|
T_C = 100 °C |
11.5 |
A |
| Diode pulsed current (tp limited by T_vjmax) |
I_Fpuls |
|
45 |
A |
| Gate Source Voltage |
V_GE |
T_vj = 25 °C |
±20 |
V |
| Power dissipation |
P_tot |
T_C = 25 °C |
37.5 |
W |
|
|
T_C = 100 °C |
18.8 |
W |
| Junction temperature |
T_vj |
|
-55 to +175 |
°C |
| Storage temperature |
T_stg |
|
-55 to +175 |
°C |
| Temperature under switching conditions |
T_vj OP |
|
-40 to +150 |
°C |
Thermal Resistance
| Parameter |
Symbol |
Conditions |
Min |
Typ |
Max |
Unit |
| IGBT Thermal resistance junction - case |
R_thJC |
IGBT |
— |
— |
4.0 |
°C/W |
Static Characteristics
| Parameter |
Symbol |
Conditions |
Min |
Typ |
Max |
Unit |
| Collector emitter voltage |
V_(BR)CES |
V_GE = 0 V, I_C = 0.1 mA, T_vj = 25 °C |
650 |
— |
— |
V |
| Collector emitter saturation voltage |
V_CEsat |
V_GE = 15 V, I_C = 15 A, T_vj = 25 °C |
— |
1.51 |
1.91 |
V |
|
|
V_GE = 15 V, I_C = 15 A, T_vj = 175 °C |
— |
1.89 |
— |
V |
| Diode forward voltage |
V_F |
V_GE = 0 V, I_C = 15 A, T_vj = 25 °C |
— |
1.28 |
1.68 |
V |
|
|
V_GE = 0 V, I_C = 15 A, T_vj = 175 °C |
— |
1.34 |
— |
V |
| Gate-emitter threshold voltage |
V_GE(th) |
V_CE = V_GE, I_C = 0.3 mA, T_vj = 25 °C |
6.1 |
6.60 |
7.1 |
V |
| Zero gate voltage collector current |
I_CES |
V_CE = 600 V, V_GE = 0 V, T_vj = 25 °C |
— |
— |
100 |
µA |
| Gate-emitter leakage current |
I_GES |
V_GE = 20 V, V_CE = 0 V |
— |
— |
100 |
nA |
|
I_GES |
V_GE = -20 V, V_CE = 0 V |
-100 |
— |
— |
nA |
Dynamic Characteristics
| Parameter |
Symbol |
Conditions |
Min |
Typ |
Max |
Unit |
| Input capacitance |
C_ies |
V_GE = 0 V, V_CE = 25 V, f = 1000 KHz |
— |
1251 |
— |
pF |
| Output capacitance |
C_oes |
|
— |
29 |
— |
pF |
| Reverse transfer capacitance |
C_res |
|
— |
16 |
— |
pF |
| Gate charge |
Q_g |
V_GE = 0 V to 15 V, I_C = 15 A, V_CE = 400 V |
— |
54 |
— |
nC |
Switching Characteristics
| Parameter |
Symbol |
Conditions |
Min |
Typ |
Max |
Unit |
| Turn-on delay time |
t_d(on) |
T_vj = 25 °C, V_CE = 400 V, I_C = 15 A, V_GE = -7.5V / 15 V, R_G(on) = 10 Ω, R_G(off) = 10 Ω |
— |
8 |
— |
ns |
| Rise time |
t_r |
|
— |
30 |
— |
ns |
| Turn-off delay time |
t_d(off) |
|
— |
67 |
— |
ns |
| Fall time |
t_f |
|
— |
63 |
— |
ns |
| Turn-on energy |
E_on |
|
— |
0.73 |
— |
mJ |
| Turn-off energy |
E_off |
|
— |
0.28 |
— |
mJ |
| Total switching energy |
E_ts |
|
— |
1.01 |
— |
mJ |
| Turn-on delay time |
t_d(on) |
T_vj = 175 °C, V_CE = 400 V, I_C = 15 A, V_GE = -7.5V / 15 V, R_G(on) = 10 Ω, R_G(off) = 10 Ω |
— |
7 |
— |
ns |
| Rise time |
t_r |
|
— |
31 |
— |
ns |
| Turn-off delay time |
t_d(off) |
|
— |
82 |
— |
ns |
| Fall time |
t_f |
|
— |
106 |
— |
ns |
| Turn-on energy |
E_on |
|
— |
0.93 |
— |
mJ |
| Turn-off energy |
E_off |
|
— |
0.61 |
— |
mJ |
| Total switching energy |
E_ts |
|
— |
1.54 |
— |
mJ |
Diode Recovery Characteristics
| Parameter |
Symbol |
Conditions |
Min |
Typ |
Max |
Unit |
| Reverse recovery time |
T_rr |
T_vj = 25 °C, V_CE = 400 V, I_C = 15 A, V_GE = -7.5V / 15 V, R_G(on) = 10 Ω, R_G(off) = 10 Ω |
— |
147 |
— |
ns |
| Reverse recovery charge |
Q_rr |
|
— |
1.89 |
— |
µC |
| Peak reverse recovery current |
I_rrm |
|
— |
24.6 |
— |
A |
| Reverse recovery energy |
E_rec |
|
— |
0.36 |
— |
mJ |
| Reverse recovery time |
T_rr |
T_vj = 175 °C, V_CE = 400 V, I_C = 15 A, V_GE = -7.5V / 15 V, R_G(on) = 10 Ω, R_G(off) = 10 Ω |
— |
255 |
— |
ns |
| Reverse recovery charge |
Q_rr |
|
— |
2.66 |
— |
µC |
| Peak reverse recovery current |
I_rrm |
|
— |
22 |
— |
A |
| Reverse recovery energy |
E_rec |
|
— |
0.58 |
— |
mJ |
Notes:
Confidential Shared Under NDA.
