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Product Detail

SRG015M065AF

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IGBT DiscreteConsumerTO220F-3L
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Specifications

Package
TO220F-3L
VCE_Max
650 V
IC
18 A
VCE(sat)_Max
1.52 V
Product Type
RC-IGBT
Tj
175 °C
Application Level
Consumer
IC_Max @100°C
12 A
Switching Frequency
5 ~ 15 kHz
ICP
45 A
EON
0.73 mJ
EOFF
0.28 mJ
IF_Max @25°C
18 A
Qrr
1.89 mC
TD(ON)
8 ns
Tr
30 ns
TD(OFF)
67 ns
Tf
63 ns
Qg
54 nC
IF,pulse
45 A
Forward Voltage Drop VF
1.28 V
IRRM
24.6 A

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Online Datasheet

Compiled from the manufacturer's datasheet; the official document prevails.

SRG015M065AF

650V / 15A IGBT

Features
  • High Input Impedance
  • Low Saturation Voltage VCE(SAT)
  • Low Switching Losses
Benefits
  • Low Conduction for a High Efficiency
  • Rugged Transient Reliability
  • Low EMI
Applications
  • Industrial Sewing Machine
  • Inverter
Key Performance and Package Parameters
Type VCE IC VCE(SAT) (Tvj = 25°C, IC = 15 A, VGE = 15 V) Tvjmax Package
IGBT 650 V 15A 1.51 V 175°C TO220F-3L
Absolute Maximum Ratings
Parameter Symbol Conditions Value Unit
Collector emitter voltage VCE Tvj = 25 °C 650 V
DC collector current IC TC = 25 °C 18 A
TC = 100 °C 11.5 A
Pulsed collector current (tp limited by Tvjmax) ICpuls 45 A
Maximum Diode forward current IF TC = 25 °C 18 A
TC = 100 °C 11.5 A
Diode pulsed current (tp limited by Tvjmax) IFpuls 45 A
Gate Source Voltage VGE Tvj = 25 °C ±20 V
Power dissipation Ptot TC = 25 °C 37.5 W
TC = 100 °C 18.8 W
Junction temperature Tvj -55 to +175 °C
Storage temperature Tstg -55 to +175 °C
Temperature under switching conditions Tvj OP -40 to +150 °C
Thermal Resistance
Parameter Symbol Conditions Min Typ Max Unit
IGBT Thermal resistance junction - case RthJC IGBT — — 4.0 °C/W

Static Characteristics

Parameter Symbol Conditions Min Typ Max Unit
Collector emitter voltage V(BR)CES VGE = 0 V, IC = 0.1 mA, Tvj = 25 °C 650 — — V
Collector emitter saturation voltage VCEsat VGE = 15 V, IC = 15 A, Tvj = 25 °C — 1.51 1.91 V
VGE = 15 V, IC = 15 A, Tvj = 175 °C — 1.89 — V
Diode forward voltage VF VGE = 0 V, IC = 15 A, Tvj = 25 °C — 1.28 1.68 V
VGE = 0 V, IC = 15 A, Tvj = 175 °C — 1.34 — V
Gate-emitter threshold voltage VGE(th) VCE = VGE, IC = 0.3 mA, Tvj = 25 °C 6.1 6.60 7.1 V
Zero gate voltage collector current ICES VCE = 600 V, VGE = 0 V, Tvj = 25 °C — — 100 µA
Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V — — 100 nA
IGES VGE = -20 V, VCE = 0 V -100 — — nA

Dynamic Characteristics

Parameter Symbol Conditions Min Typ Max Unit
Input capacitance Cies VGE = 0 V, VCE = 25 V, f = 1000 KHz — 1251 — pF
Output capacitance Coes — 29 — pF
Reverse transfer capacitance Cres — 16 — pF
Gate charge Qg VGE = 0 V to 15 V, IC = 15 A, VCE = 400 V — 54 — nC

Switching Characteristics

Parameter Symbol Conditions Min Typ Max Unit
Turn-on delay time td(on) Tvj = 25 °C, VCE = 400 V, IC = 15 A, VGE = -7.5V / 15 V, RG(on) = 10 Ω, RG(off) = 10 Ω — 8 — ns
Rise time tr — 30 — ns
Turn-off delay time td(off) — 67 — ns
Fall time tf — 63 — ns
Turn-on energy Eon — 0.73 — mJ
Turn-off energy Eoff — 0.28 — mJ
Total switching energy Ets — 1.01 — mJ
Turn-on delay time td(on) Tvj = 175 °C, VCE = 400 V, IC = 15 A, VGE = -7.5V / 15 V, RG(on) = 10 Ω, RG(off) = 10 Ω — 7 — ns
Rise time tr — 31 — ns
Turn-off delay time td(off) — 82 — ns
Fall time tf — 106 — ns
Turn-on energy Eon — 0.93 — mJ
Turn-off energy Eoff — 0.61 — mJ
Total switching energy Ets — 1.54 — mJ

Diode Recovery Characteristics

Parameter Symbol Conditions Min Typ Max Unit
Reverse recovery time Trr Tvj = 25 °C, VCE = 400 V, IC = 15 A, VGE = -7.5V / 15 V, RG(on) = 10 Ω, RG(off) = 10 Ω — 147 — ns
Reverse recovery charge Qrr — 1.89 — µC
Peak reverse recovery current Irrm — 24.6 — A
Reverse recovery energy Erec — 0.36 — mJ
Reverse recovery time Trr Tvj = 175 °C, VCE = 400 V, IC = 15 A, VGE = -7.5V / 15 V, RG(on) = 10 Ω, RG(off) = 10 Ω — 255 — ns
Reverse recovery charge Qrr — 2.66 — µC
Peak reverse recovery current Irrm — 22 — A
Reverse recovery energy Erec — 0.58 — mJ

Notes:

Confidential Shared Under NDA.

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