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SYN740D

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HV MOSFETsIndustrialTO-252Available
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Specifications

Package
TO-252
Configuration
N
Tj
150 °C
VDS_Max
400 V
ID_Max
10 A
VGS(th)_Typ
3.57 V
RDS(ON)_Typ @VGS=10V
470 mΩ
RDS(ON)_Max @VGS=10V
530 mΩ
VGS_Max
±30 V
EAS_Max
517 mJ
Ciss_Typ
801 pF
Coss_Typ
118.5 pF
Crss_Typ
5.06 pF
Qg_Typ
16.18 nC
PD
98 W
RθJA_Typ
62 °C/W

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SYN740D

This is the SYN740 series datasheet, covering SYN740D / SYN740T / SYN740F

Full text of the synapsechip.com datasheet; refer to the latest revision for updates.

突触半导体 synapsechip.com

SYN740

400 V N-Channel Power MOSFET

DATASHEET

Features

  • VDSS = 400 V, ID = 10 A
  • RDS(ON)_TYP = 0.47 Ω (VGS = 10 V)
  • Low RDS(ON)
  • Low Gate Charge
  • 100% Avalanche Tested

Applications

  • LED Power Supplies
  • Switch-Mode Power Supplies
  • Motor Driving

N-channel enhancement-mode power MOSFET built on VDMOS technology, combining low RDS(ON) with low gate charge. Available in TO-252, TO-220 and TO-220F packages.

Pin Configuration

Terminal Description
G Gate
D Drain (tab)
S Source

Ordering Information

Orderable Part Number Package Marking
SYN740D TO-252 SYN740D
SYN740T TO-220 SYN740T
SYN740F TO-220F SYN740F

Absolute Maximum Ratings

（@ TC = 25 °C, unless otherwise specified.）

Parameter Symbol Ratings Units
Drain–Source Voltage VDSS 400 V
Gate–Source Voltage VGS ±30 V
Drain Current — Continuous (@ TC = 25 °C) ID 10 A
Drain Current — Pulsed (1) IDM 40 A
Total Power Dissipation (@ TC = 25 °C) PD 98 W
Single Pulse Avalanche Energy (2) EAS 517 mJ
Operating Junction Temperature Range TJ −55 ~ 150 °C
Storage Temperature Range TSTG −55 ~ 150 °C

Thermal Characteristics

Parameter Symbol TO-252 TO-220 TO-220F Units
Junction to Ambient RθJA 62 56 56 °C/W
Junction to Case RθJC — 1.28 — °C/W

（RθJC 源表仅在 TO-220 列给值，其余两列为空，照录。）

Electrical Characteristics

（@ TC = 25 °C, unless otherwise specified.）

Off Characteristics
Parameter Symbol Test Conditions Min. Typ. Max. Units
Drain–Source Breakdown Voltage VDSS VGS = 0 V, ID = 250 μA 400 457 — V
Zero-Gate Voltage Drain Current IDSS VDS = 400 V, VGS = 0 V — — 1 μA
Gate–Source Leakage Current IGSS VGS = ±30 V, VDS = 0 V — — ±100 nA
On Characteristics
Parameter Symbol Test Conditions Min. Typ. Max. Units
Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 μA 2.5 3.57 4.5 V
Drain–Source On-Resistance (3) RDS(ON) VGS = 10 V, ID = 5 A — 0.47 0.53 Ω

Dynamic Characteristics

Parameter Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz — 801 — pF
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz — 118.5 — pF
Reverse Transfer Capacitance Crss VGS = 0 V, VDS = 25 V, f = 1 MHz — 5.06 — pF

Switching Characteristics

Parameter Symbol Test Conditions Min. Typ. Max. Units
Turn-On Delay Time td(on) VGS = 10 V, VDD = 200 V, RG = 25 Ω, ID = 10 A — 15.44 — ns
Rise Time tr VGS = 10 V, VDD = 200 V, RG = 25 Ω, ID = 10 A — 38.6 — ns
Turn-Off Delay Time td(off) VGS = 10 V, VDD = 200 V, RG = 25 Ω, ID = 10 A — 35.12 — ns
Fall Time tf VGS = 10 V, VDD = 200 V, RG = 25 Ω, ID = 10 A — 28.16 — ns

Gate Charge Characteristics

Parameter Symbol Test Conditions Min. Typ. Max. Units
Total Gate Charge Qg VDS = 320 V, ID = 10 A, VGS = 10 V — 16.18 — nC
Gate–Source Charge Qgs VDS = 320 V, ID = 10 A, VGS = 10 V — 4.77 — nC
Gate–Drain Charge Qgd VDS = 320 V, ID = 10 A, VGS = 10 V — 7.18 — nC

Drain–Source Diode Characteristics

Parameter Symbol Test Conditions Min. Typ. Max. Units
Diode Forward Voltage VSD VGS = 0 V, ISD = 10 A — — 1.4 V
Source Current IS TC = 25 °C — — 10 A
Reverse Recovery Time trr IS = 10 A, dI/dt = 100 A/μs — 255.6 — ns
Reverse Recovery Charge Qrr IS = 10 A, dI/dt = 100 A/μs — 2.15 — μC

Typical Characteristics

原文第 3–4 页为典型特性曲线图，含下列 10 幅图（曲线为图形数据，图题嵌于图内，此处仅转写图题，未数值化）：

  • Figure 1: Output Characteristics
  • Figure 2: Transfer Characteristics
  • Figure 3: On-Resistance vs Drain Current
  • Figure 4: On-Resistance vs Junction Temperature
  • Figure 5: Breakdown Voltage vs Junction Temperature
  • Figure 6: Drain Current Derating
  • Figure 7: Gate Charge
  • Figure 8: Capacitance vs Drain–Source Voltage
  • Figure 9: Body Diode Forward Characteristics
  • Figure 10: Maximum Safe Operating Area

Package Outline Dimensions (TO-252, unit: mm)

Symbol Min. Nom. Max.
A 6.3 6.5 6.9
A1 0 — 0.16
B 5.7 — 6.3
C 2.1 2.3 2.5
D 0.3 0.5 0.7
E1 0.6 0.65 0.9
E2 0.7 — 1
F 0.3 0.5 0.6
G 0.7 0.9 1.2
L1 9.6 10 10.5
L2 2.7 — 3.1
H 0.4 — 1
M 5.1 5.2 5.5
N 2.09 2.2 2.49
R 0.3
T 1.4 — 1.6
Y 5.1 5.9 6.3

Package Outline Dimensions (TO-220, unit: mm)

Symbol Min. Nom. Max.
A 4.3 4.5 4.7
A1 1 1.3 1.5
A2 1.8 2.4 2.8
b 0.6 0.8 1
b1 1 — 1.6
c 0.3 — 0.7
D 15.1 15.7 16.1
D1 8.1 9.2 10
E 9.6 9.9 10.4
e 2.54 BSC
H1 6.1 6.5 7
L 12.6 13.08 13.6
L1 — — 3.95
ΦP 3.4 3.7 3.9
Q 2.6 — 3.2

Package Outline Dimensions (TO-220F, unit: mm)

Symbol Min. Nom. Max.
A 4.42 4.7 5.02
A1 2.3 2.54 2.8
A3 2.5 2.76 3.1
b 0.7 0.8 0.9
b2 — — 1.47
c 0.35 0.5 0.65
D 15.25 15.87 16.25
D1 15.3 15.75 16.3
D2 9.3 9.8 10.3
E 9.73 10.16 10.36
e 2.54 BSC
H1 6.4 6.68 7
L 12.48 12.98 13.48
L1 — — 3.5
øP 3 3.18 3.4

Notes

  1. Pulse width limited by maximum junction temperature.
  2. EAS condition: starting TJ = 25 °C, L = 30 mH, Rg = 25 Ω.
  3. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%.

Important Notice

Information in this document is provided in connection with 突触半导体 products and is subject to change without notice. Customers are responsible for verifying that the product is suitable for their application; no license to any intellectual property right is granted by this document.

SYN740 · Rev 1.1 · 2026-07　　深圳市突触半导体有限公司 · synapsechip.com　　Page 1–6 of 6

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