产品详情

SYN740D

突触半导体旗下产品

高压 MOSFET工业TO-252在售

规格书下载

参数规格

封装: TO-252
结构: N
结温 Tj: 150 °C
漏源电压 VDS: 400 V
漏极电流 ID: 10 A
阈值电压 VGS(th) 典型: 3.57 V
导通电阻 RDS(ON)@10V 典型: 470 mΩ
导通电阻 RDS(ON)@10V 最大: 530 mΩ
栅源电压 VGS 最大: ±30 V
雪崩能量 EAS 最大: 517 mJ
输入电容 Ciss 典型: 801 pF
输出电容 Coss 典型: 118.5 pF
反向传输电容 Crss 典型: 5.06 pF
总栅极电荷 Qg 典型: 16.18 nC
耗散功率 PD: 98 W
热阻 RθJA 典型: 62 °C/W

不确定怎么选？阅读《高压 MOSFET 选型指南》 →

SYN740D

本文为 SYN740 系列规格书，覆盖 SYN740D / SYN740T / SYN740F

以下为突触半导体规格书全文，如有更新以最新版本为准。

SYN740

400 V N-Channel Power MOSFET

DATASHEET

Features

V_DSS = 400 V, I_D = 10 A
R_{DS(ON)_TYP} = 0.47 Ω (V_GS = 10 V)
Low R_DS(ON)
Low Gate Charge
100% Avalanche Tested

Applications

LED Power Supplies
Switch-Mode Power Supplies
Motor Driving

N-channel enhancement-mode power MOSFET built on VDMOS technology, combining low R_DS(ON) with low gate charge. Available in TO-252, TO-220 and TO-220F packages.

Pin Configuration

Terminal	Description
G	Gate
D	Drain (tab)
S	Source

Ordering Information

Orderable Part Number	Package	Marking
SYN740D	TO-252	SYN740D
SYN740T	TO-220	SYN740T
SYN740F	TO-220F	SYN740F

Absolute Maximum Ratings

（@ T_C = 25 °C, unless otherwise specified.）

Parameter	Symbol	Ratings	Units
Drain–Source Voltage	V_DSS	400	V
Gate–Source Voltage	V_GS	±30	V
Drain Current — Continuous (@ T_C = 25 °C)	I_D	10	A
Drain Current — Pulsed ⁽¹⁾	I_DM	40	A
Total Power Dissipation (@ T_C = 25 °C)	P_D	98	W
Single Pulse Avalanche Energy ⁽²⁾	E_AS	517	mJ
Operating Junction Temperature Range	T_J	−55 ~ 150	°C
Storage Temperature Range	T_STG	−55 ~ 150	°C

Thermal Characteristics

Parameter	Symbol	TO-252	TO-220	TO-220F	Units
Junction to Ambient	R_θJA	62	56	56	°C/W
Junction to Case	R_θJC	—	1.28	—	°C/W

（R_θJC 源表仅在 TO-220 列给值，其余两列为空，照录。）

Electrical Characteristics

（@ T_C = 25 °C, unless otherwise specified.）

Off Characteristics

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Units
Drain–Source Breakdown Voltage	V_DSS	V_GS = 0 V, I_D = 250 μA	400	457	—	V
Zero-Gate Voltage Drain Current	I_DSS	V_DS = 400 V, V_GS = 0 V	—	—	1	μA
Gate–Source Leakage Current	I_GSS	V_GS = ±30 V, V_DS = 0 V	—	—	±100	nA

On Characteristics

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Units
Gate Threshold Voltage	V_GS(TH)	V_DS = V_GS, I_D = 250 μA	2.5	3.57	4.5	V
Drain–Source On-Resistance ⁽³⁾	R_DS(ON)	V_GS = 10 V, I_D = 5 A	—	0.47	0.53	Ω

Dynamic Characteristics

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Units
Input Capacitance	C_iss	V_GS = 0 V, V_DS = 25 V, f = 1 MHz	—	801	—	pF
Output Capacitance	C_oss	V_GS = 0 V, V_DS = 25 V, f = 1 MHz	—	118.5	—	pF
Reverse Transfer Capacitance	C_rss	V_GS = 0 V, V_DS = 25 V, f = 1 MHz	—	5.06	—	pF

Switching Characteristics

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Units
Turn-On Delay Time	t_d(on)	V_GS = 10 V, V_DD = 200 V, R_G = 25 Ω, I_D = 10 A	—	15.44	—	ns
Rise Time	t_r	V_GS = 10 V, V_DD = 200 V, R_G = 25 Ω, I_D = 10 A	—	38.6	—	ns
Turn-Off Delay Time	t_d(off)	V_GS = 10 V, V_DD = 200 V, R_G = 25 Ω, I_D = 10 A	—	35.12	—	ns
Fall Time	t_f	V_GS = 10 V, V_DD = 200 V, R_G = 25 Ω, I_D = 10 A	—	28.16	—	ns

Gate Charge Characteristics

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Units
Total Gate Charge	Q_g	V_DS = 320 V, I_D = 10 A, V_GS = 10 V	—	16.18	—	nC
Gate–Source Charge	Q_gs	V_DS = 320 V, I_D = 10 A, V_GS = 10 V	—	4.77	—	nC
Gate–Drain Charge	Q_gd	V_DS = 320 V, I_D = 10 A, V_GS = 10 V	—	7.18	—	nC

Drain–Source Diode Characteristics

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Units
Diode Forward Voltage	V_SD	V_GS = 0 V, I_SD = 10 A	—	—	1.4	V
Source Current	I_S	T_C = 25 °C	—	—	10	A
Reverse Recovery Time	t_rr	I_S = 10 A, dI/dt = 100 A/μs	—	255.6	—	ns
Reverse Recovery Charge	Q_rr	I_S = 10 A, dI/dt = 100 A/μs	—	2.15	—	μC

Typical Characteristics

原文第 3–4 页为典型特性曲线图，含下列 10 幅图（曲线为图形数据，图题嵌于图内，此处仅转写图题，未数值化）：

Figure 1: Output Characteristics
Figure 2: Transfer Characteristics
Figure 3: On-Resistance vs Drain Current
Figure 4: On-Resistance vs Junction Temperature
Figure 5: Breakdown Voltage vs Junction Temperature
Figure 6: Drain Current Derating
Figure 7: Gate Charge
Figure 8: Capacitance vs Drain–Source Voltage
Figure 9: Body Diode Forward Characteristics
Figure 10: Maximum Safe Operating Area

Package Outline Dimensions (TO-252, unit: mm)

Symbol	Min.	Nom.	Max.
A	6.3	6.5	6.9
A1	0	—	0.16
B	5.7	—	6.3
C	2.1	2.3	2.5
D	0.3	0.5	0.7
E1	0.6	0.65	0.9
E2	0.7	—	1
F	0.3	0.5	0.6
G	0.7	0.9	1.2
L1	9.6	10	10.5
L2	2.7	—	3.1
H	0.4	—	1
M	5.1	5.2	5.5
N	2.09	2.2	2.49
R		0.3
T	1.4	—	1.6
Y	5.1	5.9	6.3

Package Outline Dimensions (TO-220, unit: mm)

Symbol	Min.	Nom.	Max.
A	4.3	4.5	4.7
A1	1	1.3	1.5
A2	1.8	2.4	2.8
b	0.6	0.8	1
b1	1	—	1.6
c	0.3	—	0.7
D	15.1	15.7	16.1
D1	8.1	9.2	10
E	9.6	9.9	10.4
e		2.54 BSC
H1	6.1	6.5	7
L	12.6	13.08	13.6
L1	—	—	3.95
ΦP	3.4	3.7	3.9
Q	2.6	—	3.2

Package Outline Dimensions (TO-220F, unit: mm)

Symbol	Min.	Nom.	Max.
A	4.42	4.7	5.02
A1	2.3	2.54	2.8
A3	2.5	2.76	3.1
b	0.7	0.8	0.9
b2	—	—	1.47
c	0.35	0.5	0.65
D	15.25	15.87	16.25
D1	15.3	15.75	16.3
D2	9.3	9.8	10.3
E	9.73	10.16	10.36
e		2.54 BSC
H1	6.4	6.68	7
L	12.48	12.98	13.48
L1	—	—	3.5
øP	3	3.18	3.4

Notes

Pulse width limited by maximum junction temperature.
E_AS condition: starting T_J = 25 °C, L = 30 mH, R_g = 25 Ω.
Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%.

Important Notice

Information in this document is provided in connection with 突触半导体 products and is subject to change without notice. Customers are responsible for verifying that the product is suitable for their application; no license to any intellectual property right is granted by this document.

SYN740 · Rev 1.1 · 2026-07　　深圳市突触半导体有限公司 · synapsechip.com　　Page 1–6 of 6

参数规格

SYN740D

SYN740

Features

Applications

Pin Configuration

Ordering Information

Absolute Maximum Ratings

Thermal Characteristics

Electrical Characteristics

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Gate Charge Characteristics

Drain–Source Diode Characteristics

Typical Characteristics

Package Outline Dimensions (TO-252, unit: mm)

Package Outline Dimensions (TO-220, unit: mm)

Package Outline Dimensions (TO-220F, unit: mm)

Notes

Important Notice

相关型号