产品详情
SYN11N45F
突触半导体旗下产品
参数规格
- 封装
- TO-220F
- 结构
- N-Channel
- 结温 Tj
- 150 °C
- 漏源电压 VDS
- 450 V
- 漏极电流 ID
- 11 A
- 导通电阻 RDS(ON)@10V 典型
- 520 mΩ
- 导通电阻 RDS(ON)@10V 最大
- 560 mΩ
- 栅源电压 VGS 最大
- ±30 V
- 雪崩能量 EAS 最大
- 650 mJ
- 输入电容 Ciss 典型
- 1170 pF
- 输出电容 Coss 典型
- 107 pF
- 反向传输电容 Crss 典型
- 6 pF
- 总栅极电荷 Qg 典型
- 28 nC
在线规格书
以下为突触半导体规格书全文，如有更新以最新版本为准。
SYN11N45F
450V N-Channel Power MOSFET
DATASHEET
Features
- VDSS = 450 V
- RDS(ON)_TYP = 0.52 Ω (VGS = 10 V)
- Qg (typ) = 28 nC
- ID = 11 A
- High Switching Speed
- Improved dv/dt Capability
Applications
- High-Efficiency Switch-Mode Power Supplies
- Electronic Lamp Ballasts Based on Half Bridge
- LED Power Supplies
Pin Configuration
| Pin | Name | Description |
|---|---|---|
| 1 | Gate | Gate |
| 2 | Drain | Drain (tab) |
| 3 | Source | Source |
Ordering Information
| Orderable Part Number (Halogen-Free) | Orderable Part Number (Halogen) | Package | Packing |
|---|---|---|---|
| N/A | SYN11N45F | TO-220F | 50 pieces / Tube |
Absolute Maximum Ratings
（@ TA = 25 °C, unless otherwise specified.）
| Parameter | Symbol | Ratings | Units |
|---|---|---|---|
| Drain–Source Voltage | VDSS | 450 | V |
| Gate–Source Voltage | VGSS | ±30 | V |
| Drain Current — Continuous (@ VGS = 10 V, TA = 25 °C) | ID | 11 | A |
| Drain Current — Pulsed | IDM | 44 | A |
| Avalanche Energy (1) | EAS | 650 | mJ |
| Peak Diode Recovery dv/dt | dv/dt | 5.0 | V/ns |
| Power Dissipation | PD | 45 | W |
| Junction Temperature | TJ | +150 | °C |
| Storage Temperature | TSTG | −55 ~ +150 | °C |
Thermal Characteristics
| Parameter | Symbol | Typ. | Units |
|---|---|---|---|
| Junction to Ambient | RthJA | 62.5 | °C/W |
| Junction to Case | RthJC | 2.78 | °C/W |
Electrical Characteristics
（@ TC = 25 °C, unless otherwise noted.）
Off Characteristics
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | VDSS | VGS = 0 V, ID = 250 μA | 450 | — | — | V |
| Drain to Source Leakage Current | IDSS | VDS = 450 V, VGS = 0 V | — | — | 1 | μA |
| Gate to Source Forward Leakage | IGSS(F) | VDS = 0 V, VGS = +30 V | — | — | 100 | nA |
| Gate to Source Reverse Leakage | IGSS(R) | VDS = 0 V, VGS = −30 V | — | — | −100 | nA |
On Characteristics
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Drain to Source On-Resistance | RDS(ON) | VGS = 10 V, ID = 5.5 A | — | 0.52 | 0.56 | Ω |
| Gate Threshold Voltage | VGS(TH) | VDS = VGS, ID = 250 μA | 2 | — | 4 | V |
Dynamic Characteristics
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Gate Resistance | Rg | VGS = 0 V, VDS = 0 V, f = 1.0 MHz | — | 2.1 | — | Ω |
| Forward Transconductance | gfs | VDS = 10 V, ID = 3 A | — | 5 | — | S |
| Input Capacitance | Ciss | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | — | 1170 | — | pF |
| Output Capacitance | Coss | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | — | 107 | — | pF |
| Reverse Transfer Capacitance | Crss | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | — | 6 | — | pF |
Switching Characteristics (Resistive Load)
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Turn-On Delay Time | td(ON) | ID = 11 A, VDS = 225 V, RG = 12 Ω, VGS = 10 V | — | 14 | — | ns |
| Rise Time | tr | ID = 11 A, VDS = 225 V, RG = 12 Ω, VGS = 10 V | — | 14 | — | ns |
| Turn-Off Delay Time | td(OFF) | ID = 11 A, VDS = 225 V, RG = 12 Ω, VGS = 10 V | — | 44 | — | ns |
| Fall Time | tf | ID = 11 A, VDS = 225 V, RG = 12 Ω, VGS = 10 V | — | 28 | — | ns |
Gate Charge Characteristics
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Total Gate Charge | Qg | ID = 11 A, VDS = 225 V, VGS = 10 V | — | 28 | — | nC |
| Gate to Source Charge | Qgs | ID = 11 A, VDS = 225 V, VGS = 10 V | — | 7.1 | — | nC |
| Gate to Drain (“Miller”) Charge | Qgd | ID = 11 A, VDS = 225 V, VGS = 10 V | — | 11 | — | nC |
Source–Drain Diode Characteristics
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Continuous Source Current (Body Diode) | IS | — | — | — | 11 | A |
| Maximum Pulsed Current (Body Diode) | ISM | — | — | — | 44 | A |
| Diode Forward Voltage | VSD | ISD = 1 A, VGS = 0 V | — | 0.74 | 1.2 | V |
| Reverse Recovery Time | trr | ISD = 11 A, TJ = 25 °C, dI/dt = 100 A/μs | — | 303 | — | ns |
| Reverse Recovery Charge | Qrr | ISD = 11 A, TJ = 25 °C, dI/dt = 100 A/μs | — | 1800 | — | nC |
Typical Characteristics
原文第 3–4 页为典型特性曲线图，含下列 12 幅图（曲线为图形数据，此处仅转写图题，未数值化）：
- Figure 1: Transfer Characteristics
- Figure 2: Body Diode Characteristics
- Figure 3: Drain to Source On-Resistance vs Drain Current
- Figure 4: Drain to Source On-Resistance vs Junction Temperature
- Figure 5: Threshold Voltage vs Junction Temperature
- Figure 6: Breakdown Voltage vs Junction Temperature
- Figure 7: Capacitance vs Drain to Source Voltage
- Figure 8: Gate Charge vs Gate to Source Voltage
- Figure 9: Continuous Drain vs Case Temperature
- Figure 10: Output Characteristics
- Figure 11: Power Dissipation vs Case Temperature
- Figure 12: Safe Operating Area
Package Outline Dimensions (TO-220F, unit: mm)
原文第 5 页为 TO-220F 封装外形尺寸机械图（含公差标注），尺寸数值以源图为准，此处不逐项数值化转写。
Notes
- EAS condition: TJ = 25 °C, VDD = 50 V, VG = 10 V, L = 10 mH, Rg = 25 Ω.
Important Notice
Information in this document is provided in connection with 突触半导体 products and is subject to change without notice. Customers are responsible for verifying that the product is suitable for their application; no license to any intellectual property right is granted by this document.
SYN11N45F · Rev 1.0 · 2026-07 深圳市突触半导体有限公司 · synapsechip.com Page 1–5 of 5