Specifications
- Package
- TO220-3L
- Tj
- 150 °C
- VDS_Max
- 500 V
- ID_Max
- 13 A
- RDS(ON)_Typ @VGS=10V
- 400 mΩ
- RDS(ON)_Max @VGS=10V
- 500 mΩ
- VGS_Max
- ±30 V
- EAS_Max
- 562 mJ
- Ciss_Typ
- 1180 pF
- Coss_Typ
- 120 pF
- Crss_Typ
- 13 pF
- Qg_Typ
- 32 nC
Not sure how to choose? Read the HV MOSFETs Selection Guide →
Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SMV13N50AFS
500V 13A 0.4Ω N-ch Power MOSFET
Product Summary
| VDS |
RDS(ON), max |
ID, max |
| 500 V |
500 mΩ @ VGS = 10V |
13 A |
TO220-3L
Features
- RDS(ON), typ =0.40 Ω@VGS=10V
- Low Gate Charge Minimize Switching Loss
- Fast Recovery Body Diode
Applications
- ATX Power
- LCD Panel Power
Mechanical Data
- Green Molding Compound
- Moisture Sensitivity: Level 3 per J-STD-020
- UL Flammability Classification Rating 94V-0
Ordering Information
| Orderable Part Number |
Package Type |
Device Marking |
Form |
Quantity (pcs) |
| SMV13N50AFS |
TO220-3L |
13N50AF |
Tube |
50 |
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Value |
Units |
| Drain - Source Voltage |
VDS |
500 |
V |
| Gate - Source Voltage |
VGS |
±30 |
V |
| Continuous Drain Current (VGS = 10V) (1) |
ID @ TA = 25°C |
13 |
A |
| Pulsed Drain Current (2) |
IDM |
49 |
A |
| Single Pulse Avalanche Energy (3) |
EAS |
562 |
mJ |
| Power Dissipation |
PD |
190 |
W |
|
Derating Factor above 25°C |
1.52 |
W/°C |
| Peak Diode Recovery dv/dt |
dv/dt |
5.0 |
V/ns |
| Junction & Storage Temperature Range |
TJ, TSTG |
-55 ~ +150 |
°C |
Thermal Characteristics
| Parameter |
Symbol |
Typ |
Max |
Unit |
| Thermal Resistance, Junction-to-Ambient (4) |
R_θJA |
62 |
100 |
°C/W |
| Thermal Resistance, Junction-to-Case (5) |
R_θJC |
0.86 |
1.92 |
°C/W |
Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)
Off Characteristics (6)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Drain-Source Breakdown Voltage |
V(BR)DSS |
VGS = 0V, ID = 250µA |
500 |
— |
— |
V |
|
|
VDS = 500V, VGS = 0V |
— |
— |
1.0 |
µA |
| Zero Gate Voltage Drain Current |
IDSS |
VDS = 400V, VGS = 0V, TJ = 125°C |
— |
— |
100 |
µA |
| Gate-Source Leakage Current |
IGSS |
VGS = ±30V, VDS = 0V |
— |
— |
±100 |
nA |
On Characteristics (6)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Gate Threshold Voltage |
VGS(th) |
VGS = VDS, ID = 250µA |
2.0 |
— |
4.0 |
V |
| Static Drain-Source On-Resistance |
RDS(on) |
VGS = 10V, ID = 15A |
— |
400 |
500 |
mΩ |
| Forward Transconductance |
gfs |
VDS = 20V, ID = 13A |
— |
20 |
— |
S |
| Diodes Forward Voltage |
VSD |
IS = 13A, VGS = 0V |
— |
— |
1.4 |
V |
Dynamic Characteristics (8)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Input Capacitance |
Ciss |
|
— |
1180 |
— |
pF |
| Output Capacitance |
Coss |
VDS = 25V, VGS = 0V, f = 1MHz |
— |
120 |
— |
pF |
| Reverse Transfer Capacitance |
Crss |
|
— |
13 |
— |
pF |
Switching Characteristics (6)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Turn-On Delay Time |
td(on) |
|
— |
21 |
— |
ns |
| Rise Time |
tr |
VDS = 10V, VGS = 250V |
— |
13 |
— |
ns |
| Turn-Off Delay Time (SMV13N50AFS) |
td(off) |
ID = 13A, RGEN = 25Ω |
— |
88 |
— |
ns |
| Fall Time |
tf |
|
— |
36 |
— |
ns |
Gate Charge Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Total Gate Charge (VGS = 6...10V) |
Qg |
VDS = 400V, ID = 13A |
— |
32 |
— |
nC |
| Gate-Source Charge |
Qgs |
VGS = 0...10V |
— |
7.0 |
— |
nC |
| Gate-Drain Charge |
Qgd |
|
— |
— |
— |
nC |
Drain-Source Diode Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Continuous Source Current |
ISD |
Integral PN-diode in MOSFET |
— |
— |
13 |
A |
| Pulsed Source Current |
ISM |
Pulse width≤300µs, duty cycle≤2% |
— |
— |
48 |
A |
| Body Diode Reverse Recovery Time |
trr |
IS = 13A, di/dt = 100A/µs |
— |
310 |
— |
ns |
| Body Diode Reverse Recovery Charge |
Qrr |
TJ = 25°C |
— |
4.0 |
— |
µC |
| Diode Forward Current |
IS |
TJ = 25°C |
— |
— |
13 |
A |
Notes:
- This current is chip limited, which is calculated based on Rθjc.
- This current is calculated on single pulse with 13µs Pulse & Duty Cycle = 1%.
- Defined by design, not subject to production test.
- Device mounted on FR4 substrate PC board with 2oz copper on 1inch square cooling area.
- Thermal resistance from junction to the exposed pad.
- Short duration pulse test used to minimize self-heating effect.
- Defined by design, not subject to production.
- Coss is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 480V.
