SMJ60R120AFS product image

Product Detail

SMJ60R120AFS

SineSemi 中晶新源Core Authorized Distributor

HV MOSFETsTO220-3L

Specifications

Package
TO220-3L
Tj
150 °C
VDS_Max
600 V
ID_Max
28 A
VGS(th)_Typ
3.8 V
RDS(ON)_Typ @VGS=10V
100 mΩ
RDS(ON)_Max @VGS=10V
120 mΩ
VGS_Max
±30 V
EAS_Max
100 mJ
Ciss_Typ
2200 pF
Coss_Typ
89 pF
Crss_Typ
4 pF
Qg_Typ
53 nC

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Online Datasheet

Compiled from the manufacturer's datasheet; the official document prevails.

SMJ60R120AFS

600V Super Junction N-Channel Power MOSFET

Product Summary
VDS RDS(ON), max ID, max
600 V 120 mΩ @ VGS = 10V 28 A

TO220-3L

Features
  • Low On-Resistance
  • Fast Switching Capability
  • 100% UIS and Rg tested
  • RoHS compliant, HALOGEN FREE
Applications
  • LED Lighting
  • Charger and Adapter
  • PC and Telecom Power
Mechanical Data
  • Green Molding Compound
  • UL Flammability Classification Rating 94V-0
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMJ60R120AFS TO220-3L 60R120AF Tube 50
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS 600 V
Gate - Source Voltage VGS ±30 V
Continuous Drain Current (VGS = 10V) (1) ID TA = 25°C: 28 A
TA = 150°C: 12.5 A
Pulsed Drain Current (2) IDM 84 A
Single Pulse Avalanche Energy (3) EAS 100 mJ
Single Pulse Avalanche Current (L = 10.5mH) IAS 4.5 A
Power Dissipation PD TA = 25°C: 192 W
MOSFET dv/dt Ruggedness, VDS = 0...520V — dv/dt 50
Reverse Diodes dv/dt, VDS = 0...400V, IDR < IS — dv/dt 50
Junction & Storage Temperature Range TJ, TSTG -55 ~ +150 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA — 62 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC — 0.62 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 1.0mA 600 — — V
Zero Gate Voltage Drain Current IDSS VDS = 600V, VGS = 0V — — 10 µA
Gate-Source Leakage Current IGSS VGS = ±30V, VDS = 0V — — ±100 nA
On Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 3.0 3.8 5.0 V
Static Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 13A — 100 120 mΩ
Diodes Forward Voltage VSD IS = 13A, VGS = 0V — 0.85 — V
Dynamic Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance Ciss VDS = 50V, VGS = 0V, f = 250kHz — 2200 — pF
Output Capacitance Coss — 89 — pF
Reverse Transfer Capacitance Crss — 4.0 — pF
Effective Output Capacitance, Energy Related (8) Co(er) VDS = 0V... — 73 — pF
Effective Output Capacitance, Time Related (9) Co(tr) VDS = 0...400V — 379 — pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 4.0 — Ω
Switching Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time td(on) VGS = 10V, VDS = 400V — 15 — ns
Rise Time tr ID = 25A — 24 — ns
Turn-Off Delay Time td(off) RG = 5Ω — 72 — ns
Fall Time tf — 8.0 — ns
Gate Charge Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge Qg VDS = 400V, ID = 25A — 53 — nC
Gate-Source Charge Qgs — 15 — nC
Gate-Drain Charge Qgd Qg = 0...10V — 18 — nC
Gate Plateau Voltage Vplateau — 6.0 — V
Drain-Source Diode Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Body Diode Reverse Recovery Time trr IS = 15A, di/dt = 100kHz, VDS = 400V — 130 — ns
Body Diode Reverse Recovery Charge Qrr TJ = 25°C — 0.70 — µC
Body Diode Reverse Recovery Current IRRM — 9.0 — A
Diode Forward Current IS TA = 25°C — — 28 A

Notes:

  1. This current is chip limited, which is calculated based on RθJC.
  2. This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
  3. Defined by design, not subject to production test. TJ=25°C, VDS=18V, VGS=10V, L=4.5A.
  4. Device without any heatsink.
  5. Thermal resistance from junction to soldering point (on the exposed drain pad).
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design; not subject to production.
  8. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 480V.
  9. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 480V.
SMJ60R065AFSRDS(ON)_Typ @VGS=10V58 mΩCiss_Typ2990 pFSMJ60R099BFSRDS(ON)_Typ @VGS=10V78 mΩCiss_Typ1684 pFSMJ60R130BFSRDS(ON)_Typ @VGS=10V114 mΩCiss_Typ1250 pFSMJ65R099CFSSRDS(ON)_Typ @VGS=10V87 mΩCiss_Typ1900 pFSMJ65R125CFSSRDS(ON)_Typ @VGS=10V103 mΩCiss_Typ1580 pFSMJ65R140BFSRDS(ON)_Typ @VGS=10V132 mΩCiss_Typ1224 pF