SCMP120R21AY4 产品图

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SCMP120R21AY4

中晶新源 SineSemi核心代理商

SiC MOSFETTO247-4L
规格书下载

参数规格

车规 (Y/N)
N
封装
TO247-4L
结构
N
结温 Tj
175 °C
漏源电压 VDS
1200 V
漏极电流 ID
97 A
栅源电压 VGS 最大
-10/+22 V
阈值电压 VGS(th) 典型
3 V
导通电阻 RDS(ON)@18V,25°C 典型
21 mΩ
导通电阻 RDS(ON)@18V,25°C 最大
29.4 mΩ
导通电阻 RDS(ON)@18V,175°C 典型
33.6 mΩ
输入电容 Ciss 典型
2949 pF
输出电容 Coss 典型
170 pF
反向传输电容 Crss 典型
5 pF
总栅极电荷 Qg 典型
111 nC
最小包装量
30 pcs
最小订购量
2250 pcs

不确定怎么选？阅读《SiC MOSFET 选型指南》 →

封装与电路符号

SCMP120R21AY4 封装外形、引脚配置与电路符号图
封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet）

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SCMP120R21AY4

1200V N-Channel Silicon Carbide Power MOSFET

Product Summary
VDS RDS(ON), typ ID, max
1200 V 21 mΩ @ VGS = 18V 97 A

TO247-4L

Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SCMP120R21AY4 TO247-4L P120R21A Tube 30
Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDSmax 1200 V
Gate - Source Voltage (DC) VGS -10/+22 V
Gate - Source Voltage VGSop -5/+18 V
Continuous Drain Current (TC = 25°C) ID 97 A
Continuous Drain Current (TC = 100°C) ID 69 A
Pulsed Drain Current IDM 243 A
Power Dissipation (TC = 25°C) PD 375 W
Power Dissipation, Derate Above 25°C PD 2.5 W/°C
Junction & Storage Temperature Range TJ, TSTG -55 ~ +175 °C
Maximum Lead Temperature for Soldering, 1/8" from Case for 10 Seconds TL 260 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient R_θJA — 40 °C/W
Thermal Resistance, Junction-to-Case R_θJC — 0.40 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 1.0mA 1200 — — V
Zero Gate Voltage Drain Current IDSS VDS = 1200V, VGS = 0V — 1.0 100 µA
VDS = 1200V, VGS = 0V, TJ = 175°C — 10.0 — µA
Gate-Source Leakage Current IGSS VGS = +22V, VDS = 0V, TJ = 150°C — — +100 nA
VGS = -10V, VDS = 0V, TJ = 150°C — — -100 nA
On Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 17mA (tested after VGS = 22V, 1ms pulse) 2.4 3.0 4.5 V
Static Drain-Source On-Resistance RDS(ON) VGS = 18V, ID = 45A — 21 29.4 mΩ
VGS = 18V, ID = 45A, TJ = 175°C — 33.6 — mΩ
VGS = 15V, ID = 45A — 27.5 — mΩ
Forward Transconductance gfs VGS = 20V, ID = 45A — 31.6 — S
Diodes Forward Voltage VSD VGS = -3V, ISD = 45A — 4.0 — V
Dynamic Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Input Capacitance Ciss VDS = 800V, VGS = 0V, f = 250KHz — 2949 — pF
Output Capacitance Coss — 170 — pF
Reverse Transfer Capacitance Crss — 5.0 — pF
Stored Energy in Output Capacitance Eoss VDS = 0V to 800V, VGS = 0V — 71 — µJ
Internal Gate Resistance RG f = 1MHz, VAC = 30mV — 2.3 — Ω
Switching Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Turn-On Switching Loss Eon VDS = 800V, VGS = -3/18V, ID = 45A, RG = 4.7Ω — 287 — µJ
Turn-Off Switching Loss Eoff — 199 — µJ
Total Switching Loss Etot — 486 — µJ
Turn-On Delay Time td(on) VDS = 800V, VGS = -3/18V, ID = 45A, RG = 4.7Ω — 25 — ns
Rise Time tr — 17 — ns
Turn-Off Delay Time td(off) — 54 — ns
Fall Time tf — 8.0 — ns
Gate Charge Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Total Gate Charge Qg(tot) VDS = 800V, VGS = -3/18V, ID = 45A, Inductive load — 111 — nC
Gate-Source Charge Qgs — 33 — nC
Gate-Drain Charge Qgd — 31 — nC
Drain-Source Diode Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Reverse Recovery Time trr VR = 800V, ISD = 45A, di/dt = 3000A/µs, Includes Qoss — 20 — ns
Reverse Recovery Charge Qrr — 396 — nC
Peak Reverse Recovery Current Irrm — 32 — A
Continuous Diode Forward Current IS VGS = -3.0V — — 92 A
Pulsed Diode Forward Current ISM VGS = -3.0V — — 243 A
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